JPS5799723A - Forming method for compound semiconductor thin film - Google Patents

Forming method for compound semiconductor thin film

Info

Publication number
JPS5799723A
JPS5799723A JP17558180A JP17558180A JPS5799723A JP S5799723 A JPS5799723 A JP S5799723A JP 17558180 A JP17558180 A JP 17558180A JP 17558180 A JP17558180 A JP 17558180A JP S5799723 A JPS5799723 A JP S5799723A
Authority
JP
Japan
Prior art keywords
thin film
group
substrate
compound
mesh
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17558180A
Other languages
Japanese (ja)
Inventor
Haruki Ozawaguchi
Yoshio Ito
Hiroshi Murase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP17558180A priority Critical patent/JPS5799723A/en
Publication of JPS5799723A publication Critical patent/JPS5799723A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To obtain a thin film of a smooth surface suitable for electric field light emitting element or the like by a method wherein a compound of II-VI group such as ZnS or of III-V group such as GaAs is evaporated onto a attaching surface through a mesh for blocking particle permeation. CONSTITUTION:A thin film of II-VI group compound (ZnS, ZnSe, CdS, CdSe etc.) or of III-V group compound (GaAs, GaP etc.) is fabricated by evaporation. An evaporating source 6 which contains a crucible 5 having a compound semiconductor material 4 in it and an attaching surface 3 of a substrate 2 which is arranged so as to face the former are disposed in a vacuum container 1, and by irradiation of an electron beam 10, for example, a material 4 is evaporated by heating. In addition to provision of a shutter 7 between the substrate 2 and the evaporating source 6, a particle blocking mesh 8 which has mesh holes of 30- 50mum is installed between them, and evaporation is performed. By this constitution the one which has a larger particle size among evaporated materials can be prevented from attaching to the substrate 2, and by a thin film having a smooth surface obtainable, a withstanding voltage of an electric field light emitting element for example can be improved.
JP17558180A 1980-12-12 1980-12-12 Forming method for compound semiconductor thin film Pending JPS5799723A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17558180A JPS5799723A (en) 1980-12-12 1980-12-12 Forming method for compound semiconductor thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17558180A JPS5799723A (en) 1980-12-12 1980-12-12 Forming method for compound semiconductor thin film

Publications (1)

Publication Number Publication Date
JPS5799723A true JPS5799723A (en) 1982-06-21

Family

ID=15998580

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17558180A Pending JPS5799723A (en) 1980-12-12 1980-12-12 Forming method for compound semiconductor thin film

Country Status (1)

Country Link
JP (1) JPS5799723A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0152668A2 (en) * 1984-02-17 1985-08-28 Stauffer Chemical Company High vacuum deposition processes employing a continuous pnictide delivery system
EP0152669A2 (en) * 1984-02-17 1985-08-28 Stauffer Chemical Company Continuous pnictide source and delivery system for film deposition, particularly by chemical vapour deposition
EP0153526A2 (en) * 1984-02-17 1985-09-04 Stauffer Chemical Company Vacuum deposition processes employing a continuous pnictide delivery system, particularly sputtering
US4976988A (en) * 1987-02-03 1990-12-11 Nissan Motor Co., Ltd. Vacuum evaporation method for zinc sulfide

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0152668A2 (en) * 1984-02-17 1985-08-28 Stauffer Chemical Company High vacuum deposition processes employing a continuous pnictide delivery system
EP0152669A2 (en) * 1984-02-17 1985-08-28 Stauffer Chemical Company Continuous pnictide source and delivery system for film deposition, particularly by chemical vapour deposition
EP0153526A2 (en) * 1984-02-17 1985-09-04 Stauffer Chemical Company Vacuum deposition processes employing a continuous pnictide delivery system, particularly sputtering
US4976988A (en) * 1987-02-03 1990-12-11 Nissan Motor Co., Ltd. Vacuum evaporation method for zinc sulfide

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