GB1150189A - Improvements in or relating to Television Camera Tubes. - Google Patents
Improvements in or relating to Television Camera Tubes.Info
- Publication number
- GB1150189A GB1150189A GB5793/68A GB579368A GB1150189A GB 1150189 A GB1150189 A GB 1150189A GB 5793/68 A GB5793/68 A GB 5793/68A GB 579368 A GB579368 A GB 579368A GB 1150189 A GB1150189 A GB 1150189A
- Authority
- GB
- United Kingdom
- Prior art keywords
- donor
- semi
- conductor
- deep
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 abstract 8
- 239000003990 capacitor Substances 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 238000013019 agitation Methods 0.000 abstract 1
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 abstract 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 230000005284 excitation Effects 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 230000006798 recombination Effects 0.000 abstract 1
- 238000005215 recombination Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
- H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
- H01J29/456—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions exhibiting no discontinuities, e.g. consisting of uniform layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/139—Schottky barrier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/172—Vidicons
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Abstract
1,150,189. Image pick-up tubes; photoconductive devices. WESTERN ELECTRIC CO. Inc. 6 Feb., 1968 [7 Feb., 1967], No. 5793/68. Headings HID and H1K. The charge storage target in a television pickup tube comprises an n-type semi-conductor having a higher concentration of deep donor centres, i.e. donor centres that cannot be ionized by thermal agitation at the temperature to which it is subjected, than shallow donor centres. In a vidicon type system the semiconductor 14 is insulated from a conductive base-plate 17 by an insulating film 16. Parallel strips 21 covered with insulation 22 are provided over the surface of the semi-conductor scanned by the beam and are biased positively with respect to the base-plate 17 to sweep out electrons excited from the donor centres. The effect of the excitation of the deep donors by the incident light is to reduce the width of the depletion region and the value of the voltage drop in the semi-conductor. The voltage drop across the insulator 16 is then increased and the charges are effectively stored in elemental capacitors. The charge density distribution is maintained because of the immobility of the deep donor ions. As the scanning beam impinges on each target element, beam electrons recombine with deep donor ions to discharge the elemental capacitor. The strips 21 may be eliminated if provision is made for modulating the energy of the scanning beam between values at which the secondary emission ratio of the target is greater and less than unity. At the higher energy values electrons in excess of the number required for deep donor recombination are extracted by secondary emission. The semiconductor material may be a II-VI compound such as cadmium sulphide and cadmium selenide or a III-V compound such as gallium arsenide and suitable dimensions for the target structure are given. The structure may be formed by vapour deposition or by use of single crystal material, with or without epitaxially grown layers. The resistivity of the semiconductor is preferably in the range of 10<SP>6</SP>- 3 x 10<SP>10</SP> ohm-cms. The deep donor density in the semi-conductor is more than 10<SP>17</SP>/cm.<SP>3</SP>, preferably 10-<SP>19</SP>/cm.<SP>3</SP>, and the shallow donor density less than 10<SP>16</SP>/cm.<SP>3</SP> The insulating film 16 may be eliminated and the semi-conductor bonded to the base-plate by a junction contact which is insulating under reverse bias conditions. The light radiation may be incident on the scanned side of the target, the tube being of the econoscope type.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US614457A US3403278A (en) | 1967-02-07 | 1967-02-07 | Camera tube target including n-type semiconductor having higher concentration of deep donors than shallow donors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1150189A true GB1150189A (en) | 1969-04-30 |
Family
ID=24461329
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB5793/68A Expired GB1150189A (en) | 1967-02-07 | 1968-02-06 | Improvements in or relating to Television Camera Tubes. |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3403278A (en) |
| JP (1) | JPS4529611B1 (en) |
| BE (1) | BE710309A (en) |
| DE (1) | DE1295613B (en) |
| FR (1) | FR1553244A (en) |
| GB (1) | GB1150189A (en) |
| NL (1) | NL6800178A (en) |
| SE (1) | SE335182B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3571646A (en) * | 1967-07-17 | 1971-03-23 | Tokyo Shibaura Electric Co | Photoconductive target with n-type layer of cadmium selenide including cadmium chloride and cuprous chloride |
| US3458782A (en) * | 1967-10-18 | 1969-07-29 | Bell Telephone Labor Inc | Electron beam charge storage device employing diode array and establishing an impurity gradient in order to reduce the surface recombination velocity in a region of electron-hole pair production |
| US3585430A (en) * | 1968-08-23 | 1971-06-15 | Rca Corp | Gallium arsenide phosphide camera tube target having a semi-insulating layer on the scanned surface |
| US3670198A (en) * | 1969-09-30 | 1972-06-13 | Sprague Electric Co | Solid-state vidicon structure |
| US3890523A (en) * | 1970-04-07 | 1975-06-17 | Thomson Csf | Vidicon target consisting of silicon dioxide layer on silicon |
| US3904911A (en) * | 1972-06-05 | 1975-09-09 | Siemens Ag | Light-sensitive target for vidicon picture tube |
| US3870921A (en) * | 1973-09-24 | 1975-03-11 | Xerox Corp | Image intensifier tube with improved photoemitter surface |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE529546A (en) * | 1953-06-13 | |||
| US3268764A (en) * | 1963-01-09 | 1966-08-23 | Westinghouse Electric Corp | Radiation sensitive device |
| NL290121A (en) * | 1963-03-12 |
-
1967
- 1967-02-07 US US614457A patent/US3403278A/en not_active Expired - Lifetime
-
1968
- 1968-01-05 NL NL6800178A patent/NL6800178A/xx unknown
- 1968-01-19 FR FR1553244D patent/FR1553244A/fr not_active Expired
- 1968-02-05 BE BE710309D patent/BE710309A/xx unknown
- 1968-02-06 GB GB5793/68A patent/GB1150189A/en not_active Expired
- 1968-02-06 SE SE01535/68A patent/SE335182B/xx unknown
- 1968-02-06 DE DEW45628A patent/DE1295613B/en active Pending
- 1968-02-07 JP JP720568A patent/JPS4529611B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| BE710309A (en) | 1968-06-17 |
| JPS4529611B1 (en) | 1970-09-26 |
| US3403278A (en) | 1968-09-24 |
| FR1553244A (en) | 1969-01-10 |
| NL6800178A (en) | 1968-08-08 |
| DE1295613B (en) | 1969-05-22 |
| SE335182B (en) | 1971-05-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |