DE69117159D1 - Verkleidung aus Metall zur Steigerung der Wachstumsgeschwindigkeit beim Aufdampfen von Diamant mittels CVD - Google Patents
Verkleidung aus Metall zur Steigerung der Wachstumsgeschwindigkeit beim Aufdampfen von Diamant mittels CVDInfo
- Publication number
- DE69117159D1 DE69117159D1 DE69117159T DE69117159T DE69117159D1 DE 69117159 D1 DE69117159 D1 DE 69117159D1 DE 69117159 T DE69117159 T DE 69117159T DE 69117159 T DE69117159 T DE 69117159T DE 69117159 D1 DE69117159 D1 DE 69117159D1
- Authority
- DE
- Germany
- Prior art keywords
- vapor deposition
- diamond
- cvd
- increase
- growth rate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/271—Diamond only using hot filaments
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
- Catalysts (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US63287590A | 1990-12-24 | 1990-12-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69117159D1 true DE69117159D1 (de) | 1996-03-28 |
DE69117159T2 DE69117159T2 (de) | 1996-08-29 |
Family
ID=24537315
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69117159T Expired - Fee Related DE69117159T2 (de) | 1990-12-24 | 1991-11-26 | Verkleidung aus Metall zur Steigerung der Wachstumsgeschwindigkeit beim Aufdampfen von Diamant mittels CVD |
Country Status (9)
Country | Link |
---|---|
US (1) | US5306348A (de) |
EP (1) | EP0492159B1 (de) |
JP (1) | JPH04305094A (de) |
KR (1) | KR920012535A (de) |
AT (1) | ATE134223T1 (de) |
CA (1) | CA2056473A1 (de) |
DE (1) | DE69117159T2 (de) |
IE (1) | IE914539A1 (de) |
ZA (1) | ZA919693B (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3728465B2 (ja) * | 1994-11-25 | 2005-12-21 | 株式会社神戸製鋼所 | 単結晶ダイヤモンド膜の形成方法 |
JPH0948694A (ja) * | 1995-08-04 | 1997-02-18 | Kobe Steel Ltd | 単結晶ダイヤモンド膜の形成方法 |
JP3728467B2 (ja) * | 1995-08-04 | 2005-12-21 | 株式会社神戸製鋼所 | 単結晶ダイヤモンド膜の形成方法 |
KR100496769B1 (ko) * | 2002-07-09 | 2005-06-22 | 공주대학교 산학협력단 | 흡습성 고체 전구체 기화장치 |
US7750326B2 (en) * | 2005-06-13 | 2010-07-06 | Asml Netherlands B.V. | Lithographic apparatus and cleaning method therefor |
JP2016111101A (ja) * | 2014-12-03 | 2016-06-20 | 株式会社ニューフレアテクノロジー | 気相成長方法および気相成長装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2128202A1 (de) * | 1971-06-07 | 1973-01-04 | Herbert Precht | Reaktoren zur herstellung von diamanten |
US4333986A (en) * | 1979-06-11 | 1982-06-08 | Sumitomo Electric Industries, Ltd. | Diamond sintered compact wherein crystal particles are uniformly orientated in a particular direction and a method for producing the same |
US4347431A (en) * | 1980-07-25 | 1982-08-31 | Bell Telephone Laboratories, Inc. | Diffusion furnace |
JPS592318A (ja) * | 1982-06-28 | 1984-01-07 | Toshiba Mach Co Ltd | 半導体気相成長装置 |
SE442305B (sv) * | 1984-06-27 | 1985-12-16 | Santrade Ltd | Forfarande for kemisk gasutfellning (cvd) for framstellning av en diamantbelagd sammansatt kropp samt anvendning av kroppen |
JPS62290869A (ja) * | 1986-06-09 | 1987-12-17 | Mitsubishi Electric Corp | 硬質炭素膜製造装置 |
JP2582765B2 (ja) * | 1987-02-10 | 1997-02-19 | 株式会社東芝 | ダイヤモンド製造装置 |
US4830702A (en) * | 1987-07-02 | 1989-05-16 | General Electric Company | Hollow cathode plasma assisted apparatus and method of diamond synthesis |
FR2621930B1 (fr) * | 1987-10-15 | 1990-02-02 | Solems Sa | Procede et appareil pour la production par plasma de couches minces a usage electronique et/ou optoelectronique |
US4958592A (en) * | 1988-08-22 | 1990-09-25 | General Electric Company | Resistance heater for diamond production by CVD |
US4953499A (en) * | 1989-08-03 | 1990-09-04 | General Electric Company | Apparatus for synthetic diamond deposition including curved filaments and substrate cooling means |
-
1991
- 1991-11-26 AT AT91120135T patent/ATE134223T1/de not_active IP Right Cessation
- 1991-11-26 EP EP91120135A patent/EP0492159B1/de not_active Expired - Lifetime
- 1991-11-26 DE DE69117159T patent/DE69117159T2/de not_active Expired - Fee Related
- 1991-11-28 CA CA002056473A patent/CA2056473A1/en not_active Abandoned
- 1991-12-09 ZA ZA919693A patent/ZA919693B/xx unknown
- 1991-12-18 JP JP3353137A patent/JPH04305094A/ja not_active Withdrawn
- 1991-12-23 KR KR1019910023973A patent/KR920012535A/ko not_active Application Discontinuation
- 1991-12-23 IE IE453991A patent/IE914539A1/en not_active Application Discontinuation
-
1992
- 1992-06-03 US US07/893,969 patent/US5306348A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69117159T2 (de) | 1996-08-29 |
EP0492159B1 (de) | 1996-02-14 |
ZA919693B (en) | 1992-11-25 |
KR920012535A (ko) | 1992-07-27 |
IE914539A1 (en) | 1992-07-01 |
ATE134223T1 (de) | 1996-02-15 |
US5306348A (en) | 1994-04-26 |
CA2056473A1 (en) | 1992-06-25 |
JPH04305094A (ja) | 1992-10-28 |
EP0492159A1 (de) | 1992-07-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |