DE69116975D1 - Festkörper-Bildaufnahmevorrichtung - Google Patents

Festkörper-Bildaufnahmevorrichtung

Info

Publication number
DE69116975D1
DE69116975D1 DE69116975T DE69116975T DE69116975D1 DE 69116975 D1 DE69116975 D1 DE 69116975D1 DE 69116975 T DE69116975 T DE 69116975T DE 69116975 T DE69116975 T DE 69116975T DE 69116975 D1 DE69116975 D1 DE 69116975D1
Authority
DE
Germany
Prior art keywords
imaging device
solid state
state imaging
solid
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69116975T
Other languages
English (en)
Other versions
DE69116975T2 (de
Inventor
Masaharu Hamasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE69116975D1 publication Critical patent/DE69116975D1/de
Publication of DE69116975T2 publication Critical patent/DE69116975T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/625—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of smear
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE69116975T 1990-10-17 1991-10-11 Festkörper-Bildaufnahmevorrichtung Expired - Fee Related DE69116975T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2279930A JP3050583B2 (ja) 1990-10-17 1990-10-17 固体撮像装置

Publications (2)

Publication Number Publication Date
DE69116975D1 true DE69116975D1 (de) 1996-03-21
DE69116975T2 DE69116975T2 (de) 1996-09-12

Family

ID=17617896

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69116975T Expired - Fee Related DE69116975T2 (de) 1990-10-17 1991-10-11 Festkörper-Bildaufnahmevorrichtung

Country Status (5)

Country Link
US (1) US5187583A (de)
EP (1) EP0481373B1 (de)
JP (1) JP3050583B2 (de)
KR (1) KR100227530B1 (de)
DE (1) DE69116975T2 (de)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3018546B2 (ja) * 1991-03-18 2000-03-13 ソニー株式会社 固体撮像装置
JPH06334920A (ja) * 1993-03-23 1994-12-02 Nippon Hoso Kyokai <Nhk> 固体撮像素子とその駆動方法
DE69427952T2 (de) * 1993-11-17 2002-04-04 Canon Kk Festkörperbildaufnahmevorrichtung
JP3385760B2 (ja) * 1994-02-21 2003-03-10 ソニー株式会社 固体撮像装置及びその駆動方法
JP3031606B2 (ja) * 1995-08-02 2000-04-10 キヤノン株式会社 固体撮像装置と画像撮像装置
ATE227487T1 (de) * 1995-08-11 2002-11-15 Toshiba Kk Bildaufnahmesystem, integrierte festkörperbildaufnahmehalbleiterschaltung
JP4035194B2 (ja) 1996-03-13 2008-01-16 キヤノン株式会社 Ｘ線検出装置及びｘ線検出システム
GB9619088D0 (en) * 1996-09-12 1996-10-23 Vlsi Vision Ltd Ofset cancellation in array image sensors
GB2318473B (en) * 1996-10-17 2000-11-29 Sony Corp Solid state imaging device,signal processing method and camera
US5920345A (en) * 1997-06-02 1999-07-06 Sarnoff Corporation CMOS image sensor with improved fill factor
US7289148B1 (en) 1997-09-22 2007-10-30 Cypress Semiconductor Corporation (Belgium) Bvba Devices and methods for improving the image quality in an image sensor
EP0928103A3 (de) * 1997-12-31 2000-08-02 Texas Instruments Incorporated CMOS-Bildaufnahmesensoren
US6421085B1 (en) 1998-04-14 2002-07-16 Eastman Kodak Company High speed CMOS imager column CDS circuit
US6535247B1 (en) * 1998-05-19 2003-03-18 Pictos Technologies, Inc. Active pixel sensor with capacitorless correlated double sampling
KR100352757B1 (ko) * 1998-06-02 2002-09-16 가부시끼가이샤 도시바 고속도 동작 고체 촬상 장치
JP4200545B2 (ja) * 1998-06-08 2008-12-24 ソニー株式会社 固体撮像素子およびその駆動方法、並びにカメラシステム
JP4098884B2 (ja) * 1998-07-08 2008-06-11 浜松ホトニクス株式会社 固体撮像装置
US6781624B1 (en) 1998-07-30 2004-08-24 Canon Kabushiki Kaisha Signal processing apparatus
US6873364B1 (en) * 2000-06-08 2005-03-29 Micron Technology, Inc. Low-power signal chain for image sensors
JP3667214B2 (ja) * 2000-08-25 2005-07-06 キヤノン株式会社 固体撮像装置およびその駆動方法
US7268815B1 (en) 2000-10-06 2007-09-11 Cypress Semiconductor Corporation (Belgium) Bvba Differential readout of a pixel array with elimination of pixel- and column-wise fixed pattern noise
JP4135360B2 (ja) * 2001-12-25 2008-08-20 ソニー株式会社 固体撮像装置
US6903670B1 (en) 2002-10-04 2005-06-07 Smal Camera Technologies Circuit and method for cancellation of column pattern noise in CMOS imagers
JP4507769B2 (ja) * 2004-08-31 2010-07-21 ソニー株式会社 固体撮像素子、カメラモジュール及び電子機器モジュール
US7313288B2 (en) 2005-04-20 2007-12-25 Cypress Semiconductor Corporation Defect pixel correction in an image sensor
KR100775009B1 (ko) * 2005-08-03 2007-11-09 한국과학기술원 상관 이중 샘플링 회로 및 이를 구비한 시모스 이미지 센서
JP2007158663A (ja) * 2005-12-05 2007-06-21 Ricoh Co Ltd アナログ画像信号のオフセット調整方法
US7944020B1 (en) 2006-12-22 2011-05-17 Cypress Semiconductor Corporation Reverse MIM capacitor
US8094223B1 (en) 2007-05-30 2012-01-10 On Semiconductor Trading Ltd. Bus driving in an image sensor
US8476567B2 (en) 2008-09-22 2013-07-02 Semiconductor Components Industries, Llc Active pixel with precharging circuit
JP5007739B2 (ja) * 2009-10-26 2012-08-22 ソニー株式会社 裏面照射型固体撮像素子、電子機器モジュール及びカメラモジュール
JP4957776B2 (ja) * 2009-10-26 2012-06-20 ソニー株式会社 裏面照射型固体撮像素子、電子機器モジュール及びカメラモジュール
JP4957775B2 (ja) * 2009-10-26 2012-06-20 ソニー株式会社 裏面照射型固体撮像素子、電子機器モジュール及びカメラモジュール

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4914519A (en) * 1986-09-19 1990-04-03 Canon Kabushiki Kaisha Apparatus for eliminating noise in a solid-state image pickup device
US5005063A (en) * 1986-03-03 1991-04-02 California Institute Of Technology CCD imaging sensor with flashed backside metal film
JPH0644619B2 (ja) * 1986-07-17 1994-06-08 キヤノン株式会社 光電変換装置
JP2505767B2 (ja) * 1986-09-18 1996-06-12 キヤノン株式会社 光電変換装置の製造方法
JPS63100879A (ja) * 1986-10-17 1988-05-02 Hitachi Ltd 固体撮像装置
JP2708455B2 (ja) * 1988-03-25 1998-02-04 株式会社日立製作所 固体撮像装置
US4942474A (en) * 1987-12-11 1990-07-17 Hitachi, Ltd. Solid-state imaging device having photo-electric conversion elements and other circuit elements arranged to provide improved photo-sensitivity
JPH01154678A (ja) * 1987-12-11 1989-06-16 Hitachi Ltd 固体撮像装置
US5162912A (en) * 1989-04-10 1992-11-10 Canon Kabushiki Kaisha Photoelectric conversion apparatus eliminating noise in an output signal

Also Published As

Publication number Publication date
DE69116975T2 (de) 1996-09-12
US5187583A (en) 1993-02-16
KR920009201A (ko) 1992-05-28
JPH04154282A (ja) 1992-05-27
EP0481373A2 (de) 1992-04-22
KR100227530B1 (ko) 1999-11-01
EP0481373B1 (de) 1996-02-07
JP3050583B2 (ja) 2000-06-12
EP0481373A3 (en) 1992-06-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee