DE69116202D1 - Verfahren zur Herstellung einer Halbleiterdünnschicht - Google Patents

Verfahren zur Herstellung einer Halbleiterdünnschicht

Info

Publication number
DE69116202D1
DE69116202D1 DE69116202T DE69116202T DE69116202D1 DE 69116202 D1 DE69116202 D1 DE 69116202D1 DE 69116202 T DE69116202 T DE 69116202T DE 69116202 T DE69116202 T DE 69116202T DE 69116202 D1 DE69116202 D1 DE 69116202D1
Authority
DE
Germany
Prior art keywords
thin film
semiconductor thin
production
solid phase
phase growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69116202T
Other languages
English (en)
Other versions
DE69116202T2 (de
Inventor
Takao Yonehara
Yoshiyuki Osada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2094778A external-priority patent/JP2749945B2/ja
Priority claimed from JP14786390A external-priority patent/JPH0442918A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69116202D1 publication Critical patent/DE69116202D1/de
Application granted granted Critical
Publication of DE69116202T2 publication Critical patent/DE69116202T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69116202T 1990-04-10 1991-04-09 Verfahren zur Herstellung einer Halbleiterdünnschicht Expired - Fee Related DE69116202T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2094778A JP2749945B2 (ja) 1990-04-10 1990-04-10 固相結晶成長法
JP14786390A JPH0442918A (ja) 1990-06-06 1990-06-06 半導体薄膜の形成方法

Publications (2)

Publication Number Publication Date
DE69116202D1 true DE69116202D1 (de) 1996-02-22
DE69116202T2 DE69116202T2 (de) 1996-06-20

Family

ID=26436013

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69116202T Expired - Fee Related DE69116202T2 (de) 1990-04-10 1991-04-09 Verfahren zur Herstellung einer Halbleiterdünnschicht

Country Status (4)

Country Link
US (1) US5495824A (de)
EP (1) EP0451789B1 (de)
AT (1) ATE132919T1 (de)
DE (1) DE69116202T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3173854B2 (ja) 1992-03-25 2001-06-04 株式会社半導体エネルギー研究所 薄膜状絶縁ゲイト型半導体装置の作製方法及び作成された半導体装置
US6331717B1 (en) 1993-08-12 2001-12-18 Semiconductor Energy Laboratory Co. Ltd. Insulated gate semiconductor device and process for fabricating the same
JP3173926B2 (ja) 1993-08-12 2001-06-04 株式会社半導体エネルギー研究所 薄膜状絶縁ゲイト型半導体装置の作製方法及びその半導体装置
US6383899B1 (en) * 1996-04-05 2002-05-07 Sharp Laboratories Of America, Inc. Method of forming polycrystalline semiconductor film from amorphous deposit by modulating crystallization with a combination of pre-annealing and ion implantation
US6165875A (en) * 1996-04-10 2000-12-26 The Penn State Research Foundation Methods for modifying solid phase crystallization kinetics for A-Si films
JP2000188257A (ja) * 1998-12-22 2000-07-04 Sharp Corp 結晶性シリコン系半導体薄膜の製造方法
KR100487426B1 (ko) * 2001-07-11 2005-05-04 엘지.필립스 엘시디 주식회사 폴리실리콘 결정화방법 그리고, 이를 이용한 폴리실리콘박막트랜지스터의 제조방법 및 액정표시소자의 제조방법
FR2892855B1 (fr) * 2005-10-28 2008-07-18 Commissariat Energie Atomique Procede de fabrication d'une structure en couches minces et structure en couches minces ainsi obtenue

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3900345A (en) * 1973-08-02 1975-08-19 Motorola Inc Thin low temperature epi regions by conversion of an amorphous layer
US4151008A (en) * 1974-11-15 1979-04-24 Spire Corporation Method involving pulsed light processing of semiconductor devices
EP0020134A1 (de) * 1979-05-29 1980-12-10 Massachusetts Institute Of Technology Verfahren zur Verbesserung der Epitaxie und bevorzügten Orientierung in auf festen Substraten aufgetragenen dünnen Schichten
US4331485A (en) * 1980-03-03 1982-05-25 Arnon Gat Method for heat treating semiconductor material using high intensity CW lamps
JPS5856406A (ja) * 1981-09-30 1983-04-04 Toshiba Corp 半導体膜の製造方法
US4915772A (en) * 1986-10-01 1990-04-10 Corning Incorporated Capping layer for recrystallization process
JP2651146B2 (ja) * 1987-03-02 1997-09-10 キヤノン株式会社 結晶の製造方法
JP2595525B2 (ja) * 1987-04-10 1997-04-02 ソニー株式会社 半導体薄膜の形成方法
US4885052A (en) * 1987-11-13 1989-12-05 Kopin Corporation Zone-melting recrystallization process
US4897360A (en) * 1987-12-09 1990-01-30 Wisconsin Alumni Research Foundation Polysilicon thin film process

Also Published As

Publication number Publication date
US5495824A (en) 1996-03-05
EP0451789A1 (de) 1991-10-16
DE69116202T2 (de) 1996-06-20
ATE132919T1 (de) 1996-01-15
EP0451789B1 (de) 1996-01-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee