FR2892855B1 - Procede de fabrication d'une structure en couches minces et structure en couches minces ainsi obtenue - Google Patents

Procede de fabrication d'une structure en couches minces et structure en couches minces ainsi obtenue

Info

Publication number
FR2892855B1
FR2892855B1 FR0511079A FR0511079A FR2892855B1 FR 2892855 B1 FR2892855 B1 FR 2892855B1 FR 0511079 A FR0511079 A FR 0511079A FR 0511079 A FR0511079 A FR 0511079A FR 2892855 B1 FR2892855 B1 FR 2892855B1
Authority
FR
France
Prior art keywords
thin film
layer structure
thin layer
manufacturing
film structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0511079A
Other languages
English (en)
Other versions
FR2892855A1 (fr
Inventor
Joel Eymery
Pascal Pochet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR0511079A priority Critical patent/FR2892855B1/fr
Priority to US12/091,857 priority patent/US8461031B2/en
Priority to EP06831014A priority patent/EP1941538A1/fr
Priority to JP2008537140A priority patent/JP2009514204A/ja
Priority to PCT/FR2006/002400 priority patent/WO2007048928A1/fr
Publication of FR2892855A1 publication Critical patent/FR2892855A1/fr
Application granted granted Critical
Publication of FR2892855B1 publication Critical patent/FR2892855B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02694—Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)
FR0511079A 2005-10-28 2005-10-28 Procede de fabrication d'une structure en couches minces et structure en couches minces ainsi obtenue Expired - Fee Related FR2892855B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0511079A FR2892855B1 (fr) 2005-10-28 2005-10-28 Procede de fabrication d'une structure en couches minces et structure en couches minces ainsi obtenue
US12/091,857 US8461031B2 (en) 2005-10-28 2006-10-25 Method for making a thin-film structure and resulting thin-film structure
EP06831014A EP1941538A1 (fr) 2005-10-28 2006-10-25 Procede de fabrication d'une structure en couches minces et structure en couches minces ainsi obtenue
JP2008537140A JP2009514204A (ja) 2005-10-28 2006-10-25 薄膜構造物の製造方法および得られる薄膜構造物
PCT/FR2006/002400 WO2007048928A1 (fr) 2005-10-28 2006-10-25 Procede de fabrication d'une structure en couches minces et structure en couches minces ainsi obtenue

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0511079A FR2892855B1 (fr) 2005-10-28 2005-10-28 Procede de fabrication d'une structure en couches minces et structure en couches minces ainsi obtenue

Publications (2)

Publication Number Publication Date
FR2892855A1 FR2892855A1 (fr) 2007-05-04
FR2892855B1 true FR2892855B1 (fr) 2008-07-18

Family

ID=36688025

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0511079A Expired - Fee Related FR2892855B1 (fr) 2005-10-28 2005-10-28 Procede de fabrication d'une structure en couches minces et structure en couches minces ainsi obtenue

Country Status (5)

Country Link
US (1) US8461031B2 (fr)
EP (1) EP1941538A1 (fr)
JP (1) JP2009514204A (fr)
FR (1) FR2892855B1 (fr)
WO (1) WO2007048928A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2941324B1 (fr) 2009-01-22 2011-04-29 Soitec Silicon On Insulator Procede de dissolution de la couche d'oxyde dans la couronne d'une structure de type semi-conducteur sur isolant.
US20110086756A1 (en) * 2010-12-20 2011-04-14 Gao hong-jun Method for preparing silicon intercalated monolayer graphene

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5645047A (en) * 1979-09-20 1981-04-24 Toshiba Corp Manufacture of semiconductor monocrystal film
US4617066A (en) 1984-11-26 1986-10-14 Hughes Aircraft Company Process of making semiconductors having shallow, hyperabrupt doped regions by implantation and two step annealing
DE69116202T2 (de) * 1990-04-10 1996-06-20 Canon Kk Verfahren zur Herstellung einer Halbleiterdünnschicht
US5661044A (en) * 1993-11-24 1997-08-26 Lockheed Martin Energy Systems, Inc. Processing method for forming dislocation-free SOI and other materials for semiconductor use
JPH08203842A (ja) 1995-01-30 1996-08-09 Sony Corp 半導体装置の製造方法
EP1120818A4 (fr) 1998-09-25 2005-09-14 Asahi Chemical Ind Substrat a semi-conducteur et son procede de fabrication, dispositif a semi-conducteur comprenant un tel substrat et son procede de fabrication
DE10218381A1 (de) * 2002-04-24 2004-02-26 Forschungszentrum Jülich GmbH Verfahren zur Herstellung einer oder mehrerer einkristalliner Schichten mit jeweils unterschiedlicher Gitterstruktur in einer Ebene einer Schichtenfolge
DE10318284A1 (de) 2003-04-22 2004-11-25 Forschungszentrum Jülich GmbH Verfahren zur Herstellung einer verspannten Schicht auf einem Substrat und Schichtstruktur
US6987037B2 (en) * 2003-05-07 2006-01-17 Micron Technology, Inc. Strained Si/SiGe structures by ion implantation
FR2902233B1 (fr) * 2006-06-09 2008-10-17 Soitec Silicon On Insulator Procede de limitation de diffusion en mode lacunaire dans une heterostructure

Also Published As

Publication number Publication date
US20080290471A1 (en) 2008-11-27
WO2007048928A1 (fr) 2007-05-03
JP2009514204A (ja) 2009-04-02
FR2892855A1 (fr) 2007-05-04
US8461031B2 (en) 2013-06-11
EP1941538A1 (fr) 2008-07-09

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20140630