DE69115086D1 - Quantenstruktur-Laser mit einer InGaAsP-Begrenzungsschicht und Verfahren zur Herstellung des Lasers. - Google Patents

Quantenstruktur-Laser mit einer InGaAsP-Begrenzungsschicht und Verfahren zur Herstellung des Lasers.

Info

Publication number
DE69115086D1
DE69115086D1 DE69115086T DE69115086T DE69115086D1 DE 69115086 D1 DE69115086 D1 DE 69115086D1 DE 69115086 T DE69115086 T DE 69115086T DE 69115086 T DE69115086 T DE 69115086T DE 69115086 D1 DE69115086 D1 DE 69115086D1
Authority
DE
Germany
Prior art keywords
laser
producing
confinement layer
quantum structure
ingaasp confinement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69115086T
Other languages
English (en)
Other versions
DE69115086T2 (de
Inventor
Ralph Andre Logan
Tawee Tanbun-Ek
Henryk Temkin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Corp filed Critical AT&T Corp
Publication of DE69115086D1 publication Critical patent/DE69115086D1/de
Application granted granted Critical
Publication of DE69115086T2 publication Critical patent/DE69115086T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3434—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer comprising at least both As and P as V-compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H01S5/3406—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation including strain compensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3409—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers special GRINSCH structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Lasers (AREA)
  • Semiconductor Lasers (AREA)
DE1991615086 1990-03-13 1991-03-05 Quantenstruktur-Laser mit einer InGaAsP-Begrenzungsschicht und Verfahren zur Herstellung des Lasers. Expired - Lifetime DE69115086T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US49214390A 1990-03-13 1990-03-13

Publications (2)

Publication Number Publication Date
DE69115086D1 true DE69115086D1 (de) 1996-01-18
DE69115086T2 DE69115086T2 (de) 1996-08-08

Family

ID=23955119

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1991615086 Expired - Lifetime DE69115086T2 (de) 1990-03-13 1991-03-05 Quantenstruktur-Laser mit einer InGaAsP-Begrenzungsschicht und Verfahren zur Herstellung des Lasers.

Country Status (3)

Country Link
EP (1) EP0447096B1 (de)
JP (1) JP2702819B2 (de)
DE (1) DE69115086T2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2748877B2 (ja) * 1995-01-13 1998-05-13 日本電気株式会社 半導体レーザとその製造方法
EP0812431B1 (de) * 1995-02-28 1999-01-13 Siemens Aktiengesellschaft Integriert optischer wellenleiter mit einer einen steuerbaren komplexen brechungsindex aufweisenden wellenleitenden schicht
JP2877107B2 (ja) * 1996-12-02 1999-03-31 日本電気株式会社 多重量子井戸型半導体レーザ

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59104189A (ja) * 1982-12-07 1984-06-15 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体レ−ザ
JPS6352792A (ja) * 1986-08-21 1988-03-05 Mitsubishi Electric Corp レ−ザ加工装置
JPS63161690A (ja) * 1986-12-25 1988-07-05 Nec Corp 量子井戸型半導体レ−ザ
JP2898643B2 (ja) * 1988-11-11 1999-06-02 古河電気工業株式会社 量子井戸半導体レーザ素子

Also Published As

Publication number Publication date
EP0447096A3 (en) 1992-01-22
JP2702819B2 (ja) 1998-01-26
EP0447096A2 (de) 1991-09-18
DE69115086T2 (de) 1996-08-08
EP0447096B1 (de) 1995-12-06
JPH06252512A (ja) 1994-09-09

Similar Documents

Publication Publication Date Title
DE69105079D1 (de) Stegwellenleiterlaser mit vergrabener Heterostruktur und Verfahren zu seiner Herstellung.
DE69333100D1 (de) Leistungsanordnungsstruktur hoher dichte und verfahren zur herstellung.
DE69104817T2 (de) Laservorrichtung zur Emission von einmodiger Strahlung mit geringer transversaler Divergenz.
DE69404760T2 (de) Monolithisch integrierte Laser-Modulator-Anordnung mit Multiquantumwell-Struktur
DE3886291D1 (de) Verfahren zur Herstellung einer invertierten Halbleiteranordnung vom Typ &#34;silicon-on-insulator&#34; mit einer Podeststruktur.
DE69118065T2 (de) Oberflächenemittierender Halbleiterlaser und Verfahren zu seiner Herstellung
DE68923805T2 (de) Verfahren zur herstellung von optisch aktivem 1,3-butanediol.
DE69205960D1 (de) Verfahren zur Herstellung von linearen Polyäthylenen mit niedriger Dichte.
DE492064T1 (de) Verfahren zur herstellung von wasserstoffperoxid.
DE3484834D1 (de) Verfahren zur herstellung von polyamidiminen und deren verwendung.
DE3850009T2 (de) Halbleiterlaser mit verteiltem Bragg-Reflektor und Verfahren zu seiner Herstellung.
DE3485198D1 (de) Verfahren zur herstellung optisch aktiver aryloxypropionsaeuren und deren derivate.
DE69219240D1 (de) Faserverstärkter Verbundwerkstoff mit über der Breite der Basisschicht stufenlos veränderter Faserdichte, und Verfahren zur Herstellung
DE69133534D1 (de) Schichtstruktur mit Kontaktöffnung und Verfahren zur Herstellung derselben
DE3882502D1 (de) Verfahren zur herstellung von kornorientierten elektrostahlblechen mit hoher flussdichte.
DE3882546D1 (de) Verfahren zur herstellung von schaumstoffkoerpern aus linearem polyaethylen mit niedriger dichte.
DE69106177D1 (de) Optischer Modul mit einer Umhüllung und Verfahren zur Herstellung derselben.
DE59009067D1 (de) Verfahren zur Herstellung einer Öffnung in einem Halbleiterschichtaufbau und dessen Verwendung zur Herstellung von Kontaktlöchern.
DE68914980D1 (de) Lichtausstrahlende anordnung und verfahren zur herstellung.
DE68909746T2 (de) Zusammensengesetztes Schneidmittel mit einem ultraharten Aktivteil und Verfahren zur Herstellung dieses Schneidmittels.
DE3381318D1 (de) Leicht faerbbare copolyesterfaser und verfahren zur herstellung derselben.
DE69207521D1 (de) Senkrecht zur Oberfläche emittierender Halbleiterlaser und Verfahren zu seiner Herstellung
DE3751551D1 (de) Lithographisches Verfahren unter Anwendung von Laser zur Herstellung von elektronischen Elementen und ähnlichen.
DE69115086T2 (de) Quantenstruktur-Laser mit einer InGaAsP-Begrenzungsschicht und Verfahren zur Herstellung des Lasers.
DE68924346T2 (de) Verfahren zur herstellung einer legierung mit wasserstoffeinlagerung und elektrode aus einer derartigen legierung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition