DE69108605D1 - Herstellungsverfahren einer integrierten Halbleiter-Lichtleiter-Lichtdetektor-Struktur. - Google Patents
Herstellungsverfahren einer integrierten Halbleiter-Lichtleiter-Lichtdetektor-Struktur.Info
- Publication number
- DE69108605D1 DE69108605D1 DE69108605T DE69108605T DE69108605D1 DE 69108605 D1 DE69108605 D1 DE 69108605D1 DE 69108605 T DE69108605 T DE 69108605T DE 69108605 T DE69108605 T DE 69108605T DE 69108605 D1 DE69108605 D1 DE 69108605D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing process
- integrated semiconductor
- detector structure
- light guide
- semiconductor light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
- G02B2006/12195—Tapering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/918—Single-crystal waveguide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Optical Integrated Circuits (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9006317A FR2662304B1 (fr) | 1990-05-21 | 1990-05-21 | Procede de fabrication d'une structure integree guide-detecteur de lumiere en materiau semi-conducteur. |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69108605D1 true DE69108605D1 (de) | 1995-05-11 |
DE69108605T2 DE69108605T2 (de) | 1995-11-09 |
Family
ID=9396798
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69108605T Expired - Fee Related DE69108605T2 (de) | 1990-05-21 | 1991-05-17 | Herstellungsverfahren einer integrierten Halbleiter-Lichtleiter-Lichtdetektor-Struktur. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5190883A (de) |
EP (1) | EP0458688B1 (de) |
JP (1) | JP3010389B2 (de) |
DE (1) | DE69108605T2 (de) |
FR (1) | FR2662304B1 (de) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5652435A (en) * | 1995-09-01 | 1997-07-29 | The United States Of America As Represented By The Secretary Of The Air Force | Vertical structure schottky diode optical detector |
US6931003B2 (en) * | 2000-02-09 | 2005-08-16 | Bookline Flolmstead Llc | Packet prioritization protocol for a large-scale, high speed computer network |
JP2003152216A (ja) * | 2001-11-16 | 2003-05-23 | Anritsu Corp | 半導体受光素子 |
US7043106B2 (en) * | 2002-07-22 | 2006-05-09 | Applied Materials, Inc. | Optical ready wafers |
US7110629B2 (en) * | 2002-07-22 | 2006-09-19 | Applied Materials, Inc. | Optical ready substrates |
US7072534B2 (en) * | 2002-07-22 | 2006-07-04 | Applied Materials, Inc. | Optical ready substrates |
EP1627249A4 (de) * | 2003-05-29 | 2007-05-09 | Applied Materials Inc | Serielles routen von optischen signalen |
EP1649566A4 (de) * | 2003-06-27 | 2007-08-15 | Applied Materials Inc | Gepulstes quanten-dot-lasersystem mit niedrigem jitter |
US20050016446A1 (en) | 2003-07-23 | 2005-01-27 | Abbott John S. | CaF2 lenses with reduced birefringence |
US20060222024A1 (en) * | 2005-03-15 | 2006-10-05 | Gray Allen L | Mode-locked semiconductor lasers with quantum-confined active region |
US20060227825A1 (en) * | 2005-04-07 | 2006-10-12 | Nl-Nanosemiconductor Gmbh | Mode-locked quantum dot laser with controllable gain properties by multiple stacking |
WO2007027615A1 (en) * | 2005-09-01 | 2007-03-08 | Applied Materials, Inc. | Ridge technique for fabricating an optical detector and an optical waveguide |
US8411711B2 (en) * | 2005-12-07 | 2013-04-02 | Innolume Gmbh | Semiconductor laser with low relative intensity noise of individual longitudinal modes and optical transmission system incorporating the laser |
WO2007065614A2 (en) * | 2005-12-07 | 2007-06-14 | Innolume Gmbh | Laser source with broadband spectrum emission |
US7835408B2 (en) * | 2005-12-07 | 2010-11-16 | Innolume Gmbh | Optical transmission system |
US7561607B2 (en) * | 2005-12-07 | 2009-07-14 | Innolume Gmbh | Laser source with broadband spectrum emission |
US8630326B2 (en) | 2009-10-13 | 2014-01-14 | Skorpios Technologies, Inc. | Method and system of heterogeneous substrate bonding for photonic integration |
US8867578B2 (en) | 2009-10-13 | 2014-10-21 | Skorpios Technologies, Inc. | Method and system for hybrid integration of a tunable laser for a cable TV transmitter |
US9882073B2 (en) | 2013-10-09 | 2018-01-30 | Skorpios Technologies, Inc. | Structures for bonding a direct-bandgap chip to a silicon photonic device |
US8611388B2 (en) * | 2009-10-13 | 2013-12-17 | Skorpios Technologies, Inc. | Method and system for heterogeneous substrate bonding of waveguide receivers |
US8615025B2 (en) * | 2009-10-13 | 2013-12-24 | Skorpios Technologies, Inc. | Method and system for hybrid integration of a tunable laser |
US9316785B2 (en) | 2013-10-09 | 2016-04-19 | Skorpios Technologies, Inc. | Integration of an unprocessed, direct-bandgap chip into a silicon photonic device |
US8559470B2 (en) | 2009-10-13 | 2013-10-15 | Skorpios Technologies, Inc. | Method and system for hybrid integration of a tunable laser and a phase modulator |
US8605766B2 (en) | 2009-10-13 | 2013-12-10 | Skorpios Technologies, Inc. | Method and system for hybrid integration of a tunable laser and a mach zehnder modulator |
US11181688B2 (en) | 2009-10-13 | 2021-11-23 | Skorpios Technologies, Inc. | Integration of an unprocessed, direct-bandgap chip into a silicon photonic device |
US9922967B2 (en) | 2010-12-08 | 2018-03-20 | Skorpios Technologies, Inc. | Multilevel template assisted wafer bonding |
US9885832B2 (en) | 2014-05-27 | 2018-02-06 | Skorpios Technologies, Inc. | Waveguide mode expander using amorphous silicon |
US9977188B2 (en) | 2011-08-30 | 2018-05-22 | Skorpios Technologies, Inc. | Integrated photonics mode expander |
JP6318468B2 (ja) * | 2013-05-01 | 2018-05-09 | 富士通株式会社 | 導波路型半導体受光装置及びその製造方法 |
US9664855B2 (en) | 2014-03-07 | 2017-05-30 | Skorpios Technologies, Inc. | Wide shoulder, high order mode filter for thick-silicon waveguides |
US10003173B2 (en) | 2014-04-23 | 2018-06-19 | Skorpios Technologies, Inc. | Widely tunable laser control |
WO2016172202A1 (en) | 2015-04-20 | 2016-10-27 | Skorpios Technologies, Inc. | Vertical output couplers for photonic devices |
JP2020513716A (ja) * | 2016-11-10 | 2020-05-14 | コプシス・ソチエタ・ア・レスポンサビリタ・リミタータQOpSyS S.r.l. | フォトニック共振モータ |
US10649148B2 (en) | 2017-10-25 | 2020-05-12 | Skorpios Technologies, Inc. | Multistage spot size converter in silicon photonics |
US11360263B2 (en) | 2019-01-31 | 2022-06-14 | Skorpios Technologies. Inc. | Self-aligned spot size converter |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4701008A (en) * | 1984-08-10 | 1987-10-20 | Motorola, Inc. | Optical waveguide including superstrate of niobium or silicon oxynitride and method of making same |
JPS6254991A (ja) * | 1985-09-04 | 1987-03-10 | Hitachi Ltd | 半導体レ−ザ装置 |
FR2588701B1 (fr) * | 1985-10-14 | 1988-12-30 | Bouadma Noureddine | Procede de realisation d'une structure integree laser-photodetecteur |
JPS62169389A (ja) * | 1986-01-21 | 1987-07-25 | Sharp Corp | 半導体レ−ザアレイ装置 |
JPS6410986A (en) * | 1986-06-30 | 1989-01-13 | Takeda Chemical Industries Ltd | Production of lysozyme |
JP2587628B2 (ja) * | 1987-01-29 | 1997-03-05 | 国際電信電話株式会社 | 半導体集積発光素子 |
JPH02179626A (ja) * | 1988-12-29 | 1990-07-12 | Sharp Corp | 光波長変換装置 |
FR2647967B1 (fr) * | 1989-06-06 | 1991-08-16 | Thomson Csf | Dispositif optoelectronique sur substrat semi-isolant et procede de realisation d'un tel dispositif |
US4944838A (en) * | 1989-08-03 | 1990-07-31 | At&T Bell Laboratories | Method of making tapered semiconductor waveguides |
-
1990
- 1990-05-21 FR FR9006317A patent/FR2662304B1/fr not_active Expired - Lifetime
-
1991
- 1991-05-16 US US07/700,718 patent/US5190883A/en not_active Expired - Fee Related
- 1991-05-17 DE DE69108605T patent/DE69108605T2/de not_active Expired - Fee Related
- 1991-05-17 EP EP91401285A patent/EP0458688B1/de not_active Expired - Lifetime
- 1991-05-21 JP JP3144229A patent/JP3010389B2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5190883A (en) | 1993-03-02 |
EP0458688A1 (de) | 1991-11-27 |
JPH04252079A (ja) | 1992-09-08 |
EP0458688B1 (de) | 1995-04-05 |
DE69108605T2 (de) | 1995-11-09 |
JP3010389B2 (ja) | 2000-02-21 |
FR2662304B1 (fr) | 1992-07-24 |
FR2662304A1 (fr) | 1991-11-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |