DE69102719D1 - Halbleiterbauelement mit MOS Transitor und dessen Herstellungsverfahren. - Google Patents

Halbleiterbauelement mit MOS Transitor und dessen Herstellungsverfahren.

Info

Publication number
DE69102719D1
DE69102719D1 DE69102719T DE69102719T DE69102719D1 DE 69102719 D1 DE69102719 D1 DE 69102719D1 DE 69102719 T DE69102719 T DE 69102719T DE 69102719 T DE69102719 T DE 69102719T DE 69102719 D1 DE69102719 D1 DE 69102719D1
Authority
DE
Germany
Prior art keywords
manufacturing process
mos transistor
semiconductor component
semiconductor
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69102719T
Other languages
English (en)
Other versions
DE69102719T2 (de
Inventor
Noriaki Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE69102719D1 publication Critical patent/DE69102719D1/de
Application granted granted Critical
Publication of DE69102719T2 publication Critical patent/DE69102719T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
    • H01L21/82385—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
    • H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823864—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE69102719T 1990-03-09 1991-03-08 Halbleiterbauelement mit MOS Transitor und dessen Herstellungsverfahren. Expired - Fee Related DE69102719T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP02058919A JP3125929B2 (ja) 1990-03-09 1990-03-09 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
DE69102719D1 true DE69102719D1 (de) 1994-08-11
DE69102719T2 DE69102719T2 (de) 1995-02-23

Family

ID=13098233

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69102719T Expired - Fee Related DE69102719T2 (de) 1990-03-09 1991-03-08 Halbleiterbauelement mit MOS Transitor und dessen Herstellungsverfahren.

Country Status (4)

Country Link
EP (1) EP0445836B1 (de)
JP (1) JP3125929B2 (de)
KR (1) KR940008026B1 (de)
DE (1) DE69102719T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05315604A (ja) * 1992-05-13 1993-11-26 Matsushita Electron Corp 半導体装置の製造方法
JP2982895B2 (ja) * 1997-02-06 1999-11-29 日本電気株式会社 Ｃｍｏｓ半導体装置およびその製造方法
JP3185880B2 (ja) 1998-10-16 2001-07-11 日本電気株式会社 半導体記憶装置およびその製造方法
JP2003197767A (ja) 2001-12-21 2003-07-11 Toshiba Corp 半導体装置及びその製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0123384A1 (de) * 1983-02-25 1984-10-31 Western Digital Corporation Struktur eines integrierten komplementären Feldeffektstromkreises mit isolierten Toren und Verfahren zur Herstellung dieser Struktur
EP0218408A3 (de) * 1985-09-25 1988-05-25 Hewlett-Packard Company Verfahren zum Herstellen einer schwach dotierten Drainstruktur (LLD) in integrierten Schaltungen

Also Published As

Publication number Publication date
EP0445836B1 (de) 1994-07-06
JP3125929B2 (ja) 2001-01-22
KR940008026B1 (ko) 1994-08-31
EP0445836A1 (de) 1991-09-11
DE69102719T2 (de) 1995-02-23
JPH03259564A (ja) 1991-11-19
KR910017654A (ko) 1991-11-05

Similar Documents

Publication Publication Date Title
DE69124646D1 (de) MOS-Halbleiterbauelement und dessen Herstellungsverfahren
DE3789894D1 (de) MOS-Feldeffekttransistor und dessen Herstellungsmethode.
DE69108631D1 (de) Tunnelinjektions-Halbleiterbauelement und dessen Herstellungsverfahren.
DE69202554D1 (de) Tunneltransistor und dessen Herstellungsverfahren.
DE69107779D1 (de) Transistor mit selbstjustierender epitaxialer Basis und dessen Herstellungsverfahren.
DE69426208T2 (de) Halbleiterbauelement mit Kondensator und dessen Herstellungsverfahren
DE68919408D1 (de) Verbindungshalbleiter, denselben anwendendes Halbleiter-Bauelement und Herstellungsverfahren des Halbleiter-Bauelementes.
DE69430513D1 (de) Harzvergossenes Halbleiterbauteil und dessen Herstellungsverfahren
DE68909270D1 (de) Halbleiter-Dünnschicht und Herstellungsverfahren.
DE69425592D1 (de) Dünne Chipkarte und ihr Herstellungsverfahren.
DE69132570T2 (de) Selbstjustierte Bipolartransistorstruktur und deren Herstellungsprozess
DE3789826D1 (de) MOS-Halbleiteranordnung und Herstellungsverfahren.
DE69112171D1 (de) Feldemissionseinrichtung und Herstellungsverfahren.
DE69402221D1 (de) Bipolartransistoren und deren Herstellungsverfahren
DE68919172D1 (de) MOSFET und dessen Herstellungsverfahren.
DE69015228D1 (de) Halbleitervorrichtung mit Kaskaden-modulations-dotierten Potentialtopf-Heterostrukturen.
DE69132792D1 (de) Organisches Bauelement und dessen Herstellungsverfahren
DE69022864D1 (de) Komplementäre Transistorstruktur und deren Herstellungsverfahren.
DE69317562T2 (de) Halbleiteranordnung mit doppelgate.
DE69109238D1 (de) Feldeffekttransistor.
DE69015687D1 (de) Heterostrukturbauelement und dessen Herstellungsverfahren.
NL194456B (nl) Leidgestel voor gebruik bij de vervaardiging van halfgeleiderinrichtingen, voorzien van eerste en tweede positioneerorganen.
DE69113673D1 (de) Halbleiterbauelement mit MOS-Transistoren und Verfahren zu dessen Herstellung.
DE69114435D1 (de) Supraleitendes Bauelement und dessen Herstellungsverfahren.
DE3851815D1 (de) Feldeffekttransistor und dessen Herstellungsmethode.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee