DE69033111T2 - Apparat und Verfahren für die Ausmessung von dünnen mehrschichtigen Lagen - Google Patents

Apparat und Verfahren für die Ausmessung von dünnen mehrschichtigen Lagen

Info

Publication number
DE69033111T2
DE69033111T2 DE69033111T DE69033111T DE69033111T2 DE 69033111 T2 DE69033111 T2 DE 69033111T2 DE 69033111 T DE69033111 T DE 69033111T DE 69033111 T DE69033111 T DE 69033111T DE 69033111 T2 DE69033111 T2 DE 69033111T2
Authority
DE
Germany
Prior art keywords
thin film
multilayer thin
light beam
reflection spectrum
sample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69033111T
Other languages
German (de)
English (en)
Other versions
DE69033111D1 (de
Inventor
Ryoichi Fukazawa
Ryo Hattori
Seizi Nishizawa
Tokuzi Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jasco Corp
Mitsubishi Electric Corp
Original Assignee
Jasco Corp
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP24885089A external-priority patent/JPH03110405A/ja
Priority claimed from JP24143990A external-priority patent/JP2728773B2/ja
Application filed by Jasco Corp, Mitsubishi Electric Corp filed Critical Jasco Corp
Publication of DE69033111D1 publication Critical patent/DE69033111D1/de
Application granted granted Critical
Publication of DE69033111T2 publication Critical patent/DE69033111T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0675—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating using interferometry

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
DE69033111T 1989-09-25 1990-09-24 Apparat und Verfahren für die Ausmessung von dünnen mehrschichtigen Lagen Expired - Lifetime DE69033111T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP24885089A JPH03110405A (ja) 1989-09-25 1989-09-25 多層薄膜評価装置
JP24143990A JP2728773B2 (ja) 1990-09-11 1990-09-11 半導体多層薄膜の膜厚評価装置及び膜厚評価方法

Publications (2)

Publication Number Publication Date
DE69033111D1 DE69033111D1 (de) 1999-06-17
DE69033111T2 true DE69033111T2 (de) 1999-09-09

Family

ID=26535258

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69033111T Expired - Lifetime DE69033111T2 (de) 1989-09-25 1990-09-24 Apparat und Verfahren für die Ausmessung von dünnen mehrschichtigen Lagen
DE69021813T Expired - Lifetime DE69021813T2 (de) 1989-09-25 1990-09-24 Apparat und Verfahren für die Ausmessung von dünnen mehrschichtigen Lagen.

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69021813T Expired - Lifetime DE69021813T2 (de) 1989-09-25 1990-09-24 Apparat und Verfahren für die Ausmessung von dünnen mehrschichtigen Lagen.

Country Status (3)

Country Link
US (1) US5227861A (enExample)
EP (2) EP0420113B1 (enExample)
DE (2) DE69033111T2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004021922B3 (de) * 2004-05-04 2005-11-03 Infineon Technologies Ag Verfahren und Vorrichtung zum Bestimmen der Dicke einer strukturierten dielektrischen Schicht
US7307735B2 (en) 2003-05-03 2007-12-11 Infineon Technologies Ag Method for determining the depth of a buried structure

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4135959C2 (de) * 1991-10-31 1994-01-20 Leica Ag Heerbrugg Verfahren zur Messung der Neigungen von Grenzflächen in einem optischen System
JPH05302816A (ja) * 1992-04-28 1993-11-16 Jasco Corp 半導体膜厚測定装置
JPH074922A (ja) * 1993-06-21 1995-01-10 Jasco Corp 半導体多層薄膜膜厚測定装置およびその測定方法
IL110466A (en) * 1994-07-26 1998-07-15 C I Systems Israel Ltd Film thickness mapping using interferometric spectral imaging
US5473432A (en) * 1994-09-12 1995-12-05 Hewlett-Packard Company Apparatus for measuring the thickness of a moving film utilizing an adjustable numerical aperture lens
US6454761B1 (en) 1995-01-30 2002-09-24 Philip D. Freedman Laser surgery device and method
GB9616853D0 (en) * 1996-08-10 1996-09-25 Vorgem Limited An improved thickness monitor
US6124141A (en) * 1998-01-07 2000-09-26 International Business Machines Corporation Non-destructive method and device for measuring the depth of a buried interface
IL125964A (en) * 1998-08-27 2003-10-31 Tevet Process Control Technolo Method and apparatus for measuring the thickness of a transparent film, particularly of a photoresist film on a semiconductor substrate
US6204922B1 (en) 1998-12-11 2001-03-20 Filmetrics, Inc. Rapid and accurate thin film measurement of individual layers in a multi-layered or patterned sample
US6172756B1 (en) 1998-12-11 2001-01-09 Filmetrics, Inc. Rapid and accurate end point detection in a noisy environment
US6184985B1 (en) 1998-12-11 2001-02-06 Filmetrics, Inc. Spectrometer configured to provide simultaneous multiple intensity spectra from independent light sources
US6459488B1 (en) * 2000-02-10 2002-10-01 The United States Of America As Represented By The Secretary Of The Navy Diffuse reflectance method and apparatus for determining thickness of an infrared translucent layer
DE10123470B4 (de) * 2001-05-15 2010-08-19 Carl Zeiss Jena Gmbh Verfahren und Anordnung zur berührungslosen Ermittlung von Produkteigenschaften
EP1430270A4 (en) * 2001-09-21 2006-10-25 Kmac METHOD AND DEVICE FOR MEASURING THE THICK PROFILE AND THE DISTRIBUTION OF THIN FILM MULTI-LAYER REFRACTIVE INDICES BY TWO-DIMENSIONAL REFLECTOMETRY
US6885467B2 (en) * 2002-10-28 2005-04-26 Tevet Process Control Technologies Ltd. Method and apparatus for thickness decomposition of complicated layer structures
KR100947228B1 (ko) * 2003-06-20 2010-03-11 엘지전자 주식회사 광디스크의 두께 측정 방법
JP2005069840A (ja) * 2003-08-22 2005-03-17 Japan Science & Technology Agency 時系列変換パルス分光計測装置の時系列信号取得のための光路差補償機構
US7617980B2 (en) * 2005-04-25 2009-11-17 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Integrated optical module for reflectance sensing
US7295293B2 (en) * 2005-10-21 2007-11-13 Hewlett-Packard Development Company, L.P. Apparatus and method for testing a reflector coating
US20080158572A1 (en) * 2006-12-27 2008-07-03 Honeywell, Inc. System and method for measurement of thickness of thin films
JP5172203B2 (ja) * 2007-05-16 2013-03-27 大塚電子株式会社 光学特性測定装置および測定方法
US8852175B2 (en) 2008-11-21 2014-10-07 Amo Development Llc Apparatus, system and method for precision depth measurement
JP7112879B2 (ja) 2018-05-15 2022-08-04 株式会社サイオクス 窒化物半導体積層物の製造方法、膜質検査方法および半導体成長装置の検査方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3319515A (en) * 1963-08-27 1967-05-16 Du Pont Interferometric optical phase discrimination apparatus
US3899253A (en) * 1973-09-10 1975-08-12 Mario W Overhoff Apparatus and method for automatic cross correlation interferometry
US4555767A (en) * 1982-05-27 1985-11-26 International Business Machines Corporation Method and apparatus for measuring thickness of epitaxial layer by infrared reflectance
JPS59105508A (ja) * 1982-12-08 1984-06-18 Canon Inc 白色干渉膜厚測定方法
JPS61140806A (ja) * 1984-12-14 1986-06-27 Jeol Ltd 膜厚測定方法
JPH0721405B2 (ja) * 1985-03-01 1995-03-08 株式会社日立製作所 フーリェ変換方式赤外線膜厚測定方法
JPS61235707A (ja) * 1985-04-12 1986-10-21 Toray Ind Inc 膜厚測定装置
US4625114A (en) * 1985-07-15 1986-11-25 At&T Technologies, Inc. Method and apparatus for nondestructively determining the characteristics of a multilayer thin film structure
US4748329A (en) * 1987-02-17 1988-05-31 Canadian Patents And Development Ltd. Method for on-line thickness monitoring of a transparent film
JPS63302307A (ja) * 1987-06-02 1988-12-09 Hitachi Ltd 光学的膜厚測定方法
US4927269A (en) * 1989-01-31 1990-05-22 Bruke Analytische Messtechnik Gmbh Correction of non-linearities in detectors in fourier transform spectroscopy

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7307735B2 (en) 2003-05-03 2007-12-11 Infineon Technologies Ag Method for determining the depth of a buried structure
DE102004021922B3 (de) * 2004-05-04 2005-11-03 Infineon Technologies Ag Verfahren und Vorrichtung zum Bestimmen der Dicke einer strukturierten dielektrischen Schicht

Also Published As

Publication number Publication date
EP0650030B1 (en) 1999-05-12
US5227861A (en) 1993-07-13
EP0650030A3 (enExample) 1995-05-10
EP0420113B1 (en) 1995-08-23
EP0420113A2 (en) 1991-04-03
DE69033111D1 (de) 1999-06-17
EP0420113A3 (en) 1991-06-19
EP0650030A2 (en) 1995-04-26
DE69021813D1 (de) 1995-09-28
DE69021813T2 (de) 1996-05-23

Similar Documents

Publication Publication Date Title
DE69033111T2 (de) Apparat und Verfahren für die Ausmessung von dünnen mehrschichtigen Lagen
DE3428593C2 (enExample)
DE69426070T2 (de) Verfahren zur topographischen oberflächenmessung durch raumfrequenzanalyse eines interferogrammes
EP0011708B1 (de) Verfahren und Vorrichtung zur Messung der Ebenheit, der Rauhigkeit oder des Krümmungsradius einer Messfläche
DE2201830C3 (enExample)
DE69017947T2 (de) Verfahren und Vorrichtung zum Messen der Dicke dünner Filme.
DE3781197T2 (de) Verfahren und vorrichtung mit einem zweistrahleninterferenzmikroskop zur untersuchung von integrierten schaltungen und dergleichen.
DE69523128T2 (de) Automatische Unterdrückung von Diffraktionseffekten in Dünnfilmmessungen
DE3751924T2 (de) Verfahren und Vorrichtung zum Nachweisen oder zur Bestimmung einer oder mehrerer Eigenschaften oder zum Identifizieren einer Probe
EP0494883B1 (de) Verfahren und anordnung zur fabry-perot-spektroskopie
DE69317083T2 (de) Prozesssteuerung für Submikron-Linienbreitemessung
DE69722876T2 (de) Vorrichtung und Verfahren zur optischen Profilmessung
WO1984004810A1 (fr) Procede et dispositif pour la mesure sans contact de la position reelle et/ou du profil de surfaces rugueuses
DE19721843C1 (de) Interferometrische Meßvorrichtung
WO2008012091A2 (de) Verfahren und vorrichtung zum bestimmen einer abweichung einer tatsächlichen form von einer sollform einer optischen oberfläche
DE3122712A1 (de) "verfahren und vorrichtung zum beruehrungslosen messen von oberflaechenprofilen"
DE10392881B4 (de) Frequenzabtast-Interferometer mit diffus-reflektierender Referenzoberfläche
DE2935716A1 (de) Verfahren und vorrichtung zum messen der dicke eines films durch ausnutzung von infrarot-interferenzerscheinungen
EP0075032B1 (de) Verfahren zur interferometrischen Oberflächentopographie
DE69314795T2 (de) Verfahren und vorrichtung zur interferometrischen inspektion einer oberfläche eines objektes
DE102017122689A1 (de) Verfahren und Vorrichtung zur berührungslosen Messung eines Abstands zu einer Oberfläche oder eines Abstands zwischen zwei Oberflächen
DE2854057A1 (de) Ebenheits-messeinrichtung
DE4403021C2 (de) Luftrefraktometer hoher Genauigkeit
DE3645132C2 (enExample)
DE69627419T2 (de) Fourier Spektrometer mit dichroitischen Michelson-Spiegeln für zwei Wellenlängenbänder

Legal Events

Date Code Title Description
8364 No opposition during term of opposition