DE69032005D1 - Verfahren zum Kontrollieren der Dicke einer Dünnschicht während ihrer Herstellung - Google Patents

Verfahren zum Kontrollieren der Dicke einer Dünnschicht während ihrer Herstellung

Info

Publication number
DE69032005D1
DE69032005D1 DE69032005T DE69032005T DE69032005D1 DE 69032005 D1 DE69032005 D1 DE 69032005D1 DE 69032005 T DE69032005 T DE 69032005T DE 69032005 T DE69032005 T DE 69032005T DE 69032005 D1 DE69032005 D1 DE 69032005D1
Authority
DE
Germany
Prior art keywords
manufacture
thickness
controlling
thin film
film during
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69032005T
Other languages
English (en)
Other versions
DE69032005T2 (de
Inventor
Yashuhiko Nakayama
Masataka Shiba
Susumu Komoriya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=14165162&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69032005(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from JP2096443A external-priority patent/JP2796404B2/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE69032005D1 publication Critical patent/DE69032005D1/de
Publication of DE69032005T2 publication Critical patent/DE69032005T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70608—Monitoring the unpatterned workpiece, e.g. measuring thickness, reflectivity or effects of immersion liquid on resist
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70583—Speckle reduction, e.g. coherence control or amplitude/wavefront splitting

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69032005T 1990-04-13 1990-10-10 Verfahren zum Kontrollieren der Dicke einer Dünnschicht während ihrer Herstellung Expired - Fee Related DE69032005T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2096443A JP2796404B2 (ja) 1989-04-14 1990-04-13 露光方法及びその装置並びにそれを用いた薄膜生産制御方法及びその装置

Publications (2)

Publication Number Publication Date
DE69032005D1 true DE69032005D1 (de) 1998-03-05
DE69032005T2 DE69032005T2 (de) 1998-09-17

Family

ID=14165162

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69032005T Expired - Fee Related DE69032005T2 (de) 1990-04-13 1990-10-10 Verfahren zum Kontrollieren der Dicke einer Dünnschicht während ihrer Herstellung

Country Status (3)

Country Link
US (2) US5409538A (de)
EP (1) EP0451329B1 (de)
DE (1) DE69032005T2 (de)

Families Citing this family (27)

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Publication number Priority date Publication date Assignee Title
US5216487A (en) * 1991-05-22 1993-06-01 Site Services, Inc. Transmissive system for characterizing materials containing photoreactive constituents
DE4132590A1 (de) * 1991-09-30 1993-04-08 Siemens Ag Verfahren zur automatischen regelung der belichtungsdosis in der photolithographie
US6059873A (en) * 1994-05-30 2000-05-09 Semiconductor Energy Laboratory Co., Ltd. Optical processing method with control of the illumination energy of laser light
JPH08233555A (ja) * 1994-12-28 1996-09-13 Matsushita Electric Ind Co Ltd レジストパターンの測定方法及びレジストパターンの測定装置
JPH0945604A (ja) * 1995-07-28 1997-02-14 Nec Corp 露光方法及び露光装置
US5640242A (en) * 1996-01-31 1997-06-17 International Business Machines Corporation Assembly and method for making in process thin film thickness measurments
US6142855A (en) 1997-10-31 2000-11-07 Canon Kabushiki Kaisha Polishing apparatus and polishing method
IL125964A (en) * 1998-08-27 2003-10-31 Tevet Process Control Technolo Method and apparatus for measuring the thickness of a transparent film, particularly of a photoresist film on a semiconductor substrate
KR20000050395A (ko) * 1999-01-08 2000-08-05 윤종용 반사광 검출기를 포함하는 노광장치 및 이를 이용한 노광방법
ATE291240T1 (de) * 1999-10-14 2005-04-15 Hoya Corp Gerät und verfahren zur bildung dünner schichten
TW432479B (en) * 2000-02-15 2001-05-01 Mosel Vitelic Inc The method to determine the dark-to-clear exposure dose in the swing curve
KR100337600B1 (ko) * 2000-04-06 2002-05-22 윤종용 노광 시간 조절 시스템
US6737207B2 (en) 2000-04-25 2004-05-18 Nikon Corporation Method for evaluating lithography system and method for adjusting substrate-processing apparatus
JP2001338865A (ja) 2000-05-30 2001-12-07 Nec Corp 半導体露光方法及び半導体製造装置
US6569606B1 (en) * 2000-07-27 2003-05-27 Advanced Micro Devices, Inc. Method of reducing photoresist shadowing during angled implants
KR100811964B1 (ko) * 2000-09-28 2008-03-10 동경 엘렉트론 주식회사 레지스트 패턴 형성장치 및 그 방법
KR20030026862A (ko) * 2001-09-25 2003-04-03 다이닛뽕스크린 세이조오 가부시키가이샤 기판 처리장치 제어 시스템 및 기판 처리장치
AU2003220252A1 (en) * 2003-03-14 2004-10-11 Midwest Research Institute Wafer characteristics via reflectometry
KR100530500B1 (ko) * 2003-07-31 2005-11-22 삼성전자주식회사 포토리소그래피 공정 모니터링 방법과 장치
US7099018B2 (en) * 2004-01-12 2006-08-29 Infineon Technologies Ag Measurement of optical properties of radiation sensitive materials
US20050197721A1 (en) * 2004-02-20 2005-09-08 Yung-Cheng Chen Control of exposure energy on a substrate
US8765212B2 (en) 2007-09-21 2014-07-01 Nordson Corporation Methods for continuously moving a fluid dispenser while dispensing amounts of a fluid material
KR102032961B1 (ko) * 2012-10-31 2019-10-17 삼성디스플레이 주식회사 실리콘 기판 결정화 방법
DE102016107336B4 (de) * 2016-04-20 2017-11-02 Carl Zeiss Industrielle Messtechnik Gmbh Koordinatenmessgerät, Verfahren zur Herstellung eines Koordinatenmessgeräts und Verfahren zur Messung eines optischen Filters
CN108288579B (zh) * 2017-01-10 2021-02-23 中芯国际集成电路制造(上海)有限公司 一种光刻胶层的图案化方法及半导体器件的制作方法
EP3438750A1 (de) * 2017-08-02 2019-02-06 ASML Netherlands B.V. Vorrichtungsherstellungsverfahren und computerprogrammprodukt
US11499817B2 (en) * 2020-05-29 2022-11-15 Mitutoyo Corporation Coordinate measuring machine with vision probe for performing points-from-focus type measurement operations

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4308586A (en) * 1980-05-02 1981-12-29 Nanometrics, Incorporated Method for the precise determination of photoresist exposure time
JPS5851514A (ja) * 1981-09-22 1983-03-26 Toshiba Corp ウエハ露光方法及びその装置
JPS59178729A (ja) * 1983-03-30 1984-10-11 Hitachi Ltd フォトレジストプロセスにおける露光方法
JPS6012732A (ja) * 1983-07-01 1985-01-23 Hitachi Ltd 露光装置
US4690528A (en) * 1983-10-05 1987-09-01 Nippon Kogaku K. K. Projection exposure apparatus
JPS60117623A (ja) * 1983-11-30 1985-06-25 Fujitsu Ltd 露光パタ−ンの検査方法
JPS60133549A (ja) * 1983-12-21 1985-07-16 Toshiba Corp 光学情報記録装置
JPS6270844A (ja) * 1985-09-24 1987-04-01 Mitsubishi Cable Ind Ltd フオトレジスト感度測定方法
JPH0782981B2 (ja) * 1986-02-07 1995-09-06 株式会社ニコン 投影露光方法及び装置
JPS6331116A (ja) * 1986-07-24 1988-02-09 Nec Corp 縮少投影露光装置
JPS63148633A (ja) * 1986-12-12 1988-06-21 Nec Corp フオトレジスト膜形成装置
JPS63198329A (ja) * 1987-02-13 1988-08-17 Nec Corp ホトレジスト塗布装置
JPS63227020A (ja) * 1987-03-17 1988-09-21 Toshiba Corp 半導体装置の製造装置
JPH01187924A (ja) * 1988-01-22 1989-07-27 Mitsubishi Electric Corp 露光装置
JP2688819B2 (ja) * 1988-03-25 1997-12-10 マツダ株式会社 塗布剤検出方法及びその装置
JPH0239520A (ja) * 1988-07-29 1990-02-08 Tokyo Electron Ltd レジスト膜厚の測定方法
JPH0265225A (ja) * 1988-08-31 1990-03-05 General Signal Japan Kk フォトレジストの塗布方法
US5124216A (en) * 1990-07-31 1992-06-23 At&T Bell Laboratories Method for monitoring photoresist latent images
JP2633106B2 (ja) * 1991-05-24 1997-07-23 シャープ株式会社 レジスト塗布装置

Also Published As

Publication number Publication date
EP0451329B1 (de) 1998-01-28
DE69032005T2 (de) 1998-09-17
US5409538A (en) 1995-04-25
EP0451329A3 (en) 1992-03-25
US5747201A (en) 1998-05-05
EP0451329A2 (de) 1991-10-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee