DE69030836D1 - Material und Verfahren zur Herstellung von Mikromustern - Google Patents
Material und Verfahren zur Herstellung von MikromusternInfo
- Publication number
- DE69030836D1 DE69030836D1 DE69030836T DE69030836T DE69030836D1 DE 69030836 D1 DE69030836 D1 DE 69030836D1 DE 69030836 T DE69030836 T DE 69030836T DE 69030836 T DE69030836 T DE 69030836T DE 69030836 D1 DE69030836 D1 DE 69030836D1
- Authority
- DE
- Germany
- Prior art keywords
- patterns
- micro
- production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
- G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/36—Sulfur-, selenium-, or tellurium-containing compounds
- C08K5/41—Compounds containing sulfur bound to oxygen
- C08K5/42—Sulfonic acids; Derivatives thereof
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D161/00—Coating compositions based on condensation polymers of aldehydes or ketones; Coating compositions based on derivatives of such polymers
- C09D161/04—Condensation polymers of aldehydes or ketones with phenols only
- C09D161/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Engineering & Computer Science (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1077899A JP2645587B2 (ja) | 1989-03-29 | 1989-03-29 | 微細パターン形成材料及び微細パターン形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69030836D1 true DE69030836D1 (de) | 1997-07-10 |
DE69030836T2 DE69030836T2 (de) | 1997-09-18 |
Family
ID=13646924
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69030836T Expired - Fee Related DE69030836T2 (de) | 1989-03-29 | 1990-03-29 | Material und Verfahren zur Herstellung von Mikromustern |
Country Status (4)
Country | Link |
---|---|
US (1) | US5380618A (de) |
EP (1) | EP0390173B1 (de) |
JP (1) | JP2645587B2 (de) |
DE (1) | DE69030836T2 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0460548A (ja) * | 1990-06-29 | 1992-02-26 | Fuji Photo Film Co Ltd | パターン形成用組成物及び微細パターン形成方法 |
JP2698282B2 (ja) * | 1992-03-16 | 1998-01-19 | パイオニア株式会社 | 光ディスク用フォトレジスト |
US6280910B1 (en) | 1992-11-23 | 2001-08-28 | Pioneer Electronic Corporation | Photoresist for optical disc and method of preparing optical disc utilizing photoresist |
JP3434340B2 (ja) * | 1994-03-29 | 2003-08-04 | 東京応化工業株式会社 | 高感度ポジ型ホトレジスト組成物 |
US5821345A (en) * | 1996-03-12 | 1998-10-13 | Shipley Company, L.L.C. | Thermodynamically stable photoactive compound |
US5919597A (en) * | 1997-10-30 | 1999-07-06 | Ibm Corporation Of Armonk | Methods for preparing photoresist compositions |
US6051358A (en) * | 1997-11-04 | 2000-04-18 | Shipley Company, L.L.C. | Photoresist with novel photoactive compound |
JP2002296772A (ja) * | 2001-04-02 | 2002-10-09 | Tokyo Ohka Kogyo Co Ltd | ポジ型ホトレジスト組成物 |
JP4112416B2 (ja) * | 2003-04-04 | 2008-07-02 | 東京応化工業株式会社 | 吐出ノズル式塗布法用ポジ型ホトレジスト組成物及びレジストパターンの形成方法 |
JP2007069114A (ja) * | 2005-09-06 | 2007-03-22 | Daicel Chem Ind Ltd | 薄膜の形成方法 |
US8088549B2 (en) * | 2007-12-19 | 2012-01-03 | Eastman Kodak Company | Radiation-sensitive elements with developability-enhancing compounds |
KR20100125448A (ko) * | 2008-03-25 | 2010-11-30 | 어플라이드 머티어리얼스, 인코포레이티드 | 결정성 태양 전지들을 위한 표면 세정 및 텍스처링 프로세스 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3666473A (en) * | 1970-10-06 | 1972-05-30 | Ibm | Positive photoresists for projection exposure |
US4377631A (en) * | 1981-06-22 | 1983-03-22 | Philip A. Hunt Chemical Corporation | Positive novolak photoresist compositions |
US4529682A (en) * | 1981-06-22 | 1985-07-16 | Philip A. Hunt Chemical Corporation | Positive photoresist composition with cresol-formaldehyde novolak resins |
JPS59142538A (ja) * | 1983-02-04 | 1984-08-15 | Tokyo Ohka Kogyo Co Ltd | 感光性組成物 |
CA1255952A (en) * | 1983-03-04 | 1989-06-20 | Akihiro Furuta | Positive type photoresist composition |
JPS6161153A (ja) * | 1984-09-03 | 1986-03-28 | Oki Electric Ind Co Ltd | ネガ型レジストのパタ−ン形成方法 |
US4626492A (en) * | 1985-06-04 | 1986-12-02 | Olin Hunt Specialty Products, Inc. | Positive-working o-quinone diazide photoresist composition containing a dye and a trihydroxybenzophenone compound |
DE3662952D1 (en) * | 1985-08-12 | 1989-05-24 | Hoechst Celanese Corp | Process for obtaining negative images from positive photoresists |
JPH0654389B2 (ja) * | 1986-06-23 | 1994-07-20 | 日本合成ゴム株式会社 | ポジ型感放射線性樹脂組成物 |
JPH0654388B2 (ja) * | 1986-05-02 | 1994-07-20 | 東京応化工業株式会社 | ポジ型ホトレジスト組成物 |
JPS62262043A (ja) * | 1986-05-08 | 1987-11-14 | Tokyo Ohka Kogyo Co Ltd | ポジ型感光性樹脂組成物 |
JP2564485B2 (ja) * | 1986-05-19 | 1996-12-18 | 住友化学工業株式会社 | ポジ型フォトレジスト用クレゾールノボラック樹脂 |
JPH0721641B2 (ja) * | 1986-06-18 | 1995-03-08 | 沖電気工業株式会社 | ネガ型レジストパターン形成方法 |
JPH0814696B2 (ja) * | 1987-09-17 | 1996-02-14 | 富士写真フイルム株式会社 | 感光性樹脂組成物 |
JP2706978B2 (ja) * | 1988-05-07 | 1998-01-28 | 住友化学工業株式会社 | ポジ型レジスト組成物 |
US4959292A (en) * | 1988-07-11 | 1990-09-25 | Olin Hunt Specialty Products Inc. | Light-sensitive o-quinone diazide composition and product with phenolic novolak prepared by condensation with haloacetoaldehyde |
US4943511A (en) * | 1988-08-05 | 1990-07-24 | Morton Thiokol, Inc. | High sensitivity mid and deep UV resist |
WO1990001726A1 (en) * | 1988-08-10 | 1990-02-22 | Macdermid, Incorporated | Light-sensitive novolac resins |
JP2623778B2 (ja) * | 1988-10-18 | 1997-06-25 | 日本合成ゴム株式会社 | 感放射線性樹脂組成物 |
US4965167A (en) * | 1988-11-10 | 1990-10-23 | Olin Hunt Specialty Products, Inc. | Positive-working photoresist employing a selected mixture of ethyl lactate and ethyl 3-ethoxy propionate as casting solvent |
US4957846A (en) * | 1988-12-27 | 1990-09-18 | Olin Hunt Specialty Products Inc. | Radiation sensitive compound and mixtures with trinuclear novolak oligomer with o-naphthoquinone diazide sulfonyl group |
-
1989
- 1989-03-29 JP JP1077899A patent/JP2645587B2/ja not_active Expired - Fee Related
-
1990
- 1990-03-29 DE DE69030836T patent/DE69030836T2/de not_active Expired - Fee Related
- 1990-03-29 EP EP90106075A patent/EP0390173B1/de not_active Expired - Lifetime
-
1994
- 1994-04-19 US US08/230,020 patent/US5380618A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2645587B2 (ja) | 1997-08-25 |
JPH02254451A (ja) | 1990-10-15 |
US5380618A (en) | 1995-01-10 |
DE69030836T2 (de) | 1997-09-18 |
EP0390173B1 (de) | 1997-06-04 |
EP0390173A2 (de) | 1990-10-03 |
EP0390173A3 (de) | 1991-10-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |