DE69027282D1 - Halbleiterbauelement und elektronische Vorrichtung unter Verwendung des Halbleiters - Google Patents

Halbleiterbauelement und elektronische Vorrichtung unter Verwendung des Halbleiters

Info

Publication number
DE69027282D1
DE69027282D1 DE69027282T DE69027282T DE69027282D1 DE 69027282 D1 DE69027282 D1 DE 69027282D1 DE 69027282 T DE69027282 T DE 69027282T DE 69027282 T DE69027282 T DE 69027282T DE 69027282 D1 DE69027282 D1 DE 69027282D1
Authority
DE
Germany
Prior art keywords
semiconductor
electronic device
electronic
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69027282T
Other languages
English (en)
Other versions
DE69027282T2 (de
Inventor
Masakazu Morishita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1311550A external-priority patent/JP2618503B2/ja
Priority claimed from JP1311548A external-priority patent/JP2953666B2/ja
Priority claimed from JP2048321A external-priority patent/JP3037710B2/ja
Priority claimed from JP2048320A external-priority patent/JP3037709B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69027282D1 publication Critical patent/DE69027282D1/de
Publication of DE69027282T2 publication Critical patent/DE69027282T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0895—Tunnel injectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7311—Tunnel transistors
DE1990627282 1989-11-30 1990-11-29 Halbleiterbauelement und elektronische Vorrichtung unter Verwendung des Halbleiters Expired - Fee Related DE69027282T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1311550A JP2618503B2 (ja) 1989-11-30 1989-11-30 半導体装置及び電子装置
JP1311548A JP2953666B2 (ja) 1989-11-30 1989-11-30 半導体装置及び電子装置
JP2048321A JP3037710B2 (ja) 1990-02-28 1990-02-28 半導体装置およびその半導体装置を使用する電子装置
JP2048320A JP3037709B2 (ja) 1990-02-28 1990-02-28 半導体装置およびその半導体装置を使用する電子装置

Publications (2)

Publication Number Publication Date
DE69027282D1 true DE69027282D1 (de) 1996-07-11
DE69027282T2 DE69027282T2 (de) 1997-01-02

Family

ID=27462180

Family Applications (2)

Application Number Title Priority Date Filing Date
DE1990622692 Expired - Fee Related DE69022692T2 (de) 1989-11-30 1990-11-29 Bipolares Halbleiterbauelement.
DE1990627282 Expired - Fee Related DE69027282T2 (de) 1989-11-30 1990-11-29 Halbleiterbauelement und elektronische Vorrichtung unter Verwendung des Halbleiters

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE1990622692 Expired - Fee Related DE69022692T2 (de) 1989-11-30 1990-11-29 Bipolares Halbleiterbauelement.

Country Status (2)

Country Link
EP (2) EP0431835B1 (de)
DE (2) DE69022692T2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5382815A (en) * 1993-12-23 1995-01-17 International Business Machines Corporation Carrier conduction conductor-insulator semiconductor (CIS) transistor
FR2801420B1 (fr) * 1999-11-23 2002-04-12 St Microelectronics Sa Transistor bipolaire vertical a faible bruit basse frequence et gain en courant eleve, et procede de fabrication correspondant
DE10324065A1 (de) * 2003-05-27 2004-12-30 Texas Instruments Deutschland Gmbh Verfahren zur Herstellung eines integrierten Silizium-Germanium-Heterobipolartranistors und ein integrierter Silizium-Germanium Heterobipolartransitor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4672413A (en) * 1984-04-16 1987-06-09 Trw Inc. Barrier emitter transistor
KR900007686B1 (ko) * 1986-10-08 1990-10-18 후지쓰 가부시끼가이샤 선택적으로 산화된 실리콘 기판상에 에피택셜 실리콘층과 다결정 실리콘층을 동시에 성장시키는 기상 증착방법

Also Published As

Publication number Publication date
DE69027282T2 (de) 1997-01-02
EP0431836B1 (de) 1996-06-05
EP0431836A1 (de) 1991-06-12
DE69022692D1 (de) 1995-11-02
EP0431835B1 (de) 1995-09-27
DE69022692T2 (de) 1996-03-14
EP0431835A1 (de) 1991-06-12

Similar Documents

Publication Publication Date Title
DE69227066T2 (de) Elektronische Vorrichtung
DE69128600D1 (de) Integrierte photo-voltaische Vorrichtung
DE69016918T2 (de) Elektronische Bauteile-Bestückungsvorrichtung.
DE58904157D1 (de) Elektronische einrichtung und betriebsverfahren.
DE69027450T2 (de) Orthodontische vorrichtung
IT1236229B (it) Dispositivo di microcomando
DE69333123D1 (de) Elektronische Vorrichtung
DE69028306D1 (de) Vorrichtung zur abnahme und zur anzeige von kreislauf-parametern
DE69027359T2 (de) Elektronische Vorrichtung
DE69404065D1 (de) Rotierende elektronische Vorrichtung
DE68913058D1 (de) Vorrichtung zur Teilchenmessung.
DE69132791D1 (de) Elektronische Vorrichtung
DE58906947D1 (de) Vorrichtung zum Befestigen von Schalt- und Messgeräten.
DE69210441T2 (de) Vorrichtung zur Halterung und Positionierung von elektronischen Chips
DE69032019D1 (de) Elektronisches Gerät
DE59001049D1 (de) Vorrichtung zur wechselstrom-einschaltbegrenzung.
DE69027282D1 (de) Halbleiterbauelement und elektronische Vorrichtung unter Verwendung des Halbleiters
KR900019203A (ko) 반도체 장치와 반도체 장치를 사용한 전자장치
DE69709559D1 (de) Elektronische Vorrichtung mit integrierter Zeitbasis
DE68928552T2 (de) Integrierte Halbleiterschaltung und System unter Verwendung derselben Schaltung
DE68909344T2 (de) Elektronisches Wägegerät.
DE68928587D1 (de) Informationseingabeverfahren und vorrichtung
DE68905293D1 (de) Rektifikationsverfahren und vorrichtung dafuer.
KR900702570A (ko) 전자 모놀리드식 집적장치
DE69516251T2 (de) Elektronische Vorrichtung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee