DE69023109D1 - Hochreines hydroxylabgeschlossenes Phenylpolysiloxan mit Leiterstruktur und Verfahren zu seiner Herstellung. - Google Patents

Hochreines hydroxylabgeschlossenes Phenylpolysiloxan mit Leiterstruktur und Verfahren zu seiner Herstellung.

Info

Publication number
DE69023109D1
DE69023109D1 DE69023109T DE69023109T DE69023109D1 DE 69023109 D1 DE69023109 D1 DE 69023109D1 DE 69023109 T DE69023109 T DE 69023109T DE 69023109 T DE69023109 T DE 69023109T DE 69023109 D1 DE69023109 D1 DE 69023109D1
Authority
DE
Germany
Prior art keywords
phenylpolysiloxane
terminated
production
highly pure
ladder structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69023109T
Other languages
English (en)
Other versions
DE69023109T2 (de
Inventor
Shigeyuki Yamamoto
Hiroshi Adachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE69023109D1 publication Critical patent/DE69023109D1/de
Publication of DE69023109T2 publication Critical patent/DE69023109T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/06—Preparatory processes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C08G77/16—Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxyl groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/32—Post-polymerisation treatment
    • C08G77/34—Purification
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Silicon Polymers (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
DE69023109T 1990-01-10 1990-12-07 Hochreines hydroxylabgeschlossenes Phenylpolysiloxan mit Leiterstruktur und Verfahren zu seiner Herstellung. Expired - Fee Related DE69023109T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002868A JP2718231B2 (ja) 1990-01-10 1990-01-10 高純度末端ヒドロキシフェニルラダーシロキサンプレポリマーの製造方法および高純度末端ヒドロキシフェニルラダーポリシロキサンの製造方法

Publications (2)

Publication Number Publication Date
DE69023109D1 true DE69023109D1 (de) 1995-11-23
DE69023109T2 DE69023109T2 (de) 1996-05-15

Family

ID=11541339

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69023109T Expired - Fee Related DE69023109T2 (de) 1990-01-10 1990-12-07 Hochreines hydroxylabgeschlossenes Phenylpolysiloxan mit Leiterstruktur und Verfahren zu seiner Herstellung.

Country Status (5)

Country Link
US (1) US5179185A (de)
EP (1) EP0436844B1 (de)
JP (1) JP2718231B2 (de)
KR (1) KR940003887B1 (de)
DE (1) DE69023109T2 (de)

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US5276173A (en) * 1992-10-05 1994-01-04 Dow Corning Corporation Method for removal for ionic chloride from hydroxyl-terminated siloxanes
JP2923408B2 (ja) * 1992-12-21 1999-07-26 三菱電機株式会社 高純度シリコーンラダーポリマーの製造方法
JP3079939B2 (ja) * 1994-08-25 2000-08-21 信越化学工業株式会社 シラノール基を有する低分子量のオルガノシロキサンの製造方法
JPH08245792A (ja) * 1995-03-10 1996-09-24 Mitsubishi Electric Corp シリコーンラダーポリマー、シリコーンラダープレポリマーおよびそれらの製造方法
US5679822A (en) * 1997-01-28 1997-10-21 Pcr, Inc. High purity branched phenylsiloxane fluids
US5932231A (en) * 1997-07-11 1999-08-03 Pcr, Inc. High purity branched alkylsilsesquioxane fluids
CN1206021A (zh) * 1997-07-17 1999-01-27 中国科学院化学研究所 有机硅管状高分子复合物及其制备方法
US6962727B2 (en) * 1998-03-20 2005-11-08 Honeywell International Inc. Organosiloxanes
US6177199B1 (en) * 1999-01-07 2001-01-23 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with low organic content
JP3543669B2 (ja) * 1999-03-31 2004-07-14 信越化学工業株式会社 絶縁膜形成用塗布液及び絶縁膜の形成方法
US6703132B1 (en) 1999-12-22 2004-03-09 Mitsubishi Denki Kabushiki Kaisha Magnetoresistance sensor element and method of fabricating the magnetoresistance element
KR20000063142A (ko) * 2000-02-17 2000-11-06 이응찬 폴리오르가노실세스키옥산 제조용 출발물질,폴리오르가노실세스키옥산 및 폴리오르가노실세스키옥산제조방법
JP3679972B2 (ja) 2000-04-04 2005-08-03 三菱電機株式会社 高純度シリコーンラダーポリマーの製造方法
EP1314193A2 (de) * 2000-08-21 2003-05-28 Dow Global Technologies Inc. Organosilikatharz-hart-maske für polymere mit niedriger dielektrischer konstante in der herstellung von mikroelektronischen schaltungen
US6599995B2 (en) * 2001-05-01 2003-07-29 Korea Institute Of Science And Technology Polyalkylaromaticsilsesquioxane and preparation method thereof
US7056989B2 (en) * 2001-05-01 2006-06-06 Korea Institute Of Science And Technology Polyalkylaromaticsilsesquioxane and preparation method thereof
WO2003059990A1 (en) * 2002-01-17 2003-07-24 Silecs Oy Thin films and methods for the preparation thereof
KR100985272B1 (ko) 2002-01-17 2010-10-04 질렉스 오와이 집적 회로에 적용하기 위한 혼성 유기-무기 유전체를 위한폴리(유기실록산) 물질 및 방법
US7345351B2 (en) * 2003-04-09 2008-03-18 Lg Chem, Ltd. Coating composition for insulating film production, preparation method of insulation film by using the same, insulation film for semi-conductor device prepared therefrom, and semi-conductor device comprising the same
US8901268B2 (en) * 2004-08-03 2014-12-02 Ahila Krishnamoorthy Compositions, layers and films for optoelectronic devices, methods of production and uses thereof
CN101848957B (zh) * 2007-11-19 2012-09-26 东亚合成株式会社 聚硅氧烷及其制造方法以及固化物的制造方法
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
KR20110112641A (ko) * 2010-04-07 2011-10-13 한국과학기술연구원 광활성 그룹을 측쇄로 가지는 사다리 구조의 폴리실세스퀴옥산 및 이의 제조방법
US8895962B2 (en) 2010-06-29 2014-11-25 Nanogram Corporation Silicon/germanium nanoparticle inks, laser pyrolysis reactors for the synthesis of nanoparticles and associated methods
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
KR20130042867A (ko) * 2011-10-19 2013-04-29 삼성디스플레이 주식회사 보호막 용액 조성물, 박막 트랜지스터 표시판 및 박막 트랜지스터 표시판 제조 방법
JP6271716B2 (ja) 2013-05-24 2018-01-31 帝人株式会社 シリコン／ゲルマニウム系ナノ粒子及び高粘度アルコール溶媒を含有する印刷用インク
EP3194502A4 (de) 2015-04-13 2018-05-16 Honeywell International Inc. Polysiloxanformulierungen und beschichtungen für optoelektronische anwendungen
CN113388120B (zh) * 2021-06-16 2022-07-12 山东省科学院新材料研究所 一种高耐热共聚硅树脂及其制备方法
CN113651960B (zh) * 2021-08-25 2022-09-06 山东东岳有机硅材料股份有限公司 电子用高纯度、粘度可控的硅树脂的制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56125855A (en) * 1980-03-07 1981-10-02 Fujitsu Ltd Manufacture of semiconductor device
JPS5850657B2 (ja) * 1980-07-09 1983-11-11 日立化成工業株式会社 末端ヒドロキシフェニルラダ−ポリシロキサンの製造法
DE3278567D1 (en) * 1981-10-03 1988-07-07 Japan Synthetic Rubber Co Ltd Solvent-soluble organopolysilsesquioxanes, processes for producing the same, and compositions and semiconductor devices using the same
JPS61278532A (ja) * 1985-06-05 1986-12-09 Mitsubishi Electric Corp 末端ヒドロキシフエニルラダ−ポリシロキサンの製法
JPH0192224A (ja) * 1987-04-20 1989-04-11 Mitsubishi Electric Corp 高純度フェニルシリコーンラダーポリマーの製造法
US5081202A (en) * 1989-11-17 1992-01-14 Mitsubishi Denki Kabushiki Kaisha High purity phenyl silicone ladder polymer and method for producing the same

Also Published As

Publication number Publication date
KR910014434A (ko) 1991-08-31
US5179185A (en) 1993-01-12
EP0436844B1 (de) 1995-10-18
KR940003887B1 (ko) 1994-05-04
JP2718231B2 (ja) 1998-02-25
EP0436844A2 (de) 1991-07-17
DE69023109T2 (de) 1996-05-15
EP0436844A3 (en) 1992-04-08
JPH03207719A (ja) 1991-09-11

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Legal Events

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8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee