DE69019867D1 - Abfühlverstärker. - Google Patents

Abfühlverstärker.

Info

Publication number
DE69019867D1
DE69019867D1 DE69019867T DE69019867T DE69019867D1 DE 69019867 D1 DE69019867 D1 DE 69019867D1 DE 69019867 T DE69019867 T DE 69019867T DE 69019867 T DE69019867 T DE 69019867T DE 69019867 D1 DE69019867 D1 DE 69019867D1
Authority
DE
Germany
Prior art keywords
sensing amplifier
amplifier
sensing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69019867T
Other languages
English (en)
Other versions
DE69019867T2 (de
Inventor
Andrew Michael Lever
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hughes Microelectronics Ltd
Original Assignee
Hughes Microelectronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Microelectronics Ltd filed Critical Hughes Microelectronics Ltd
Publication of DE69019867D1 publication Critical patent/DE69019867D1/de
Application granted granted Critical
Publication of DE69019867T2 publication Critical patent/DE69019867T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/06—Sense amplifier related aspects
    • G11C2207/063—Current sense amplifiers
DE69019867T 1989-03-29 1990-03-20 Abfühlverstärker. Expired - Lifetime DE69019867T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB898907045A GB8907045D0 (en) 1989-03-29 1989-03-29 Sense amplifier

Publications (2)

Publication Number Publication Date
DE69019867D1 true DE69019867D1 (de) 1995-07-13
DE69019867T2 DE69019867T2 (de) 1995-12-14

Family

ID=10654103

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69019867T Expired - Lifetime DE69019867T2 (de) 1989-03-29 1990-03-20 Abfühlverstärker.

Country Status (4)

Country Link
US (1) US5031145A (de)
EP (1) EP0390404B1 (de)
DE (1) DE69019867T2 (de)
GB (1) GB8907045D0 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0478097A (ja) * 1990-07-13 1992-03-12 Sony Corp メモリ装置
JP3454520B2 (ja) * 1990-11-30 2003-10-06 インテル・コーポレーション フラッシュ記憶装置の書込み状態を確認する回路及びその方法
US6002614A (en) 1991-02-08 1999-12-14 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
US5218569A (en) 1991-02-08 1993-06-08 Banks Gerald J Electrically alterable non-volatile memory with n-bits per memory cell
US5241503A (en) * 1991-02-25 1993-08-31 Motorola, Inc. Dynamic random access memory with improved page-mode performance and method therefor having isolator between memory cells and sense amplifiers
KR950003347B1 (ko) * 1991-09-24 1995-04-10 가부시키가이샤 도시바 불휘발성 반도체 기억장치
JPH05217387A (ja) * 1992-02-05 1993-08-27 Mitsubishi Electric Corp 半導体メモリ装置
US5444656A (en) * 1994-06-02 1995-08-22 Intel Corporation Apparatus for fast internal reference cell trimming
US6353554B1 (en) 1995-02-27 2002-03-05 Btg International Inc. Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell
EP1094465A1 (de) * 1999-10-20 2001-04-25 Infineon Technologies AG Speichereinrichtung
KR100370240B1 (ko) * 2000-10-31 2003-02-05 삼성전자 주식회사 안정도와 증폭도 개선을 위한 반도체 메모리 장치의 전류감지 증폭 회로
US6657917B2 (en) 2001-07-02 2003-12-02 Micron Technology, Inc. Selective adjustment of voltage controlled oscillator gain in a phase-locked loop
US6911682B2 (en) 2001-12-28 2005-06-28 Nantero, Inc. Electromechanical three-trace junction devices
US7566478B2 (en) 2001-07-25 2009-07-28 Nantero, Inc. Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles
US6835591B2 (en) 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
US6706402B2 (en) 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US6574130B2 (en) * 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US6924538B2 (en) 2001-07-25 2005-08-02 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US6643165B2 (en) 2001-07-25 2003-11-04 Nantero, Inc. Electromechanical memory having cell selection circuitry constructed with nanotube technology
US6919592B2 (en) 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US7259410B2 (en) 2001-07-25 2007-08-21 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US7176505B2 (en) 2001-12-28 2007-02-13 Nantero, Inc. Electromechanical three-trace junction devices
US6784028B2 (en) 2001-12-28 2004-08-31 Nantero, Inc. Methods of making electromechanical three-trace junction devices
US7335395B2 (en) 2002-04-23 2008-02-26 Nantero, Inc. Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
US7560136B2 (en) 2003-01-13 2009-07-14 Nantero, Inc. Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
US10908120B2 (en) 2014-08-07 2021-02-02 Laurus Corporation Semiconductor biosensor and control method thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2089612B (en) * 1980-12-12 1984-08-30 Tokyo Shibaura Electric Co Nonvolatile semiconductor memory device
EP0085260B1 (de) * 1981-12-29 1989-08-02 Fujitsu Limited Nichtflüchtige Halbleiterspeicherschaltung
JPS59218696A (ja) * 1983-05-26 1984-12-08 Toshiba Corp 半導体メモリ
US4943948A (en) * 1986-06-05 1990-07-24 Motorola, Inc. Program check for a non-volatile memory
US4748593A (en) * 1986-09-08 1988-05-31 Ncr Corporation High speed nonvolatile memory cell
US4845675A (en) * 1988-01-22 1989-07-04 Texas Instruments Incorporated High-speed data latch with zero data hold time

Also Published As

Publication number Publication date
EP0390404A3 (de) 1992-07-08
US5031145A (en) 1991-07-09
EP0390404B1 (de) 1995-06-07
GB8907045D0 (en) 1989-05-10
DE69019867T2 (de) 1995-12-14
EP0390404A2 (de) 1990-10-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition