DE69019485D1 - Magnetoresistiver Fühler. - Google Patents

Magnetoresistiver Fühler.

Info

Publication number
DE69019485D1
DE69019485D1 DE69019485T DE69019485T DE69019485D1 DE 69019485 D1 DE69019485 D1 DE 69019485D1 DE 69019485 T DE69019485 T DE 69019485T DE 69019485 T DE69019485 T DE 69019485T DE 69019485 D1 DE69019485 D1 DE 69019485D1
Authority
DE
Germany
Prior art keywords
magnetoresistive sensor
magnetoresistive
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69019485T
Other languages
English (en)
Other versions
DE69019485T2 (de
Inventor
Stuart Parkin
Kevin Patrick Roche
Virgil Simon Speriosu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE69019485D1 publication Critical patent/DE69019485D1/de
Publication of DE69019485T2 publication Critical patent/DE69019485T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
    • G11B5/3932—Magnetic biasing films
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/399—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures with intrinsic biasing, e.g. provided by equipotential strips
DE69019485T 1989-10-31 1990-10-30 Magnetoresistiver Fühler. Expired - Fee Related DE69019485T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/429,678 US5014147A (en) 1989-10-31 1989-10-31 Magnetoresistive sensor with improved antiferromagnetic film

Publications (2)

Publication Number Publication Date
DE69019485D1 true DE69019485D1 (de) 1995-06-22
DE69019485T2 DE69019485T2 (de) 1996-01-25

Family

ID=23704273

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69019485T Expired - Fee Related DE69019485T2 (de) 1989-10-31 1990-10-30 Magnetoresistiver Fühler.

Country Status (4)

Country Link
US (1) US5014147A (de)
EP (1) EP0432890B1 (de)
JP (1) JPH03144909A (de)
DE (1) DE69019485T2 (de)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03242983A (ja) 1990-02-06 1991-10-29 Internatl Business Mach Corp <Ibm> 磁気構造体の製造方法
US5390061A (en) 1990-06-08 1995-02-14 Hitachi, Ltd. Multilayer magnetoresistance effect-type magnetic head
JPH04285713A (ja) * 1991-03-14 1992-10-09 Hitachi Ltd 磁気抵抗効果型磁気ヘッドおよびその製造方法
JP2812826B2 (ja) * 1991-09-04 1998-10-22 株式会社日立製作所 磁気抵抗効果型磁気ヘッドおよびその製造方法
JP2817501B2 (ja) * 1991-09-18 1998-10-30 株式会社日立製作所 磁気ディスク装置及びそれに用いる磁気ヘッド
EP0570883B1 (de) * 1992-05-18 1998-01-21 Nec Corporation Magnetoresistives Element
US5315468A (en) * 1992-07-28 1994-05-24 International Business Machines Corporation Magnetoresistive sensor having antiferromagnetic layer for exchange bias
US5492605A (en) * 1992-08-24 1996-02-20 International Business Machines Corporation Ion beam induced sputtered multilayered magnetic structures
US5475550A (en) * 1992-08-25 1995-12-12 Seagate Technology, Inc. Enhanced cross-talk suppression in magnetoresistive sensors
JP2725977B2 (ja) * 1992-08-28 1998-03-11 インターナショナル・ビジネス・マシーンズ・コーポレイション 磁気抵抗センサ及びその製造方法、磁気記憶システム
DE4232244C2 (de) * 1992-09-25 1998-05-14 Siemens Ag Magnetowiderstands-Sensor
US5780176A (en) * 1992-10-30 1998-07-14 Kabushiki Kaisha Toshiba Magnetoresistance effect element
US5373238A (en) * 1992-11-06 1994-12-13 International Business Machines Corporation Four layer magnetoresistance device and method for making a four layer magnetoresistance device
DE4243358A1 (de) * 1992-12-21 1994-06-23 Siemens Ag Magnetowiderstands-Sensor mit künstlichem Antiferromagneten und Verfahren zu seiner Herstellung
DE4243357A1 (de) * 1992-12-21 1994-06-23 Siemens Ag Magnetowiderstands-Sensor mit verkürzten Meßschichten
DE4401476A1 (de) * 1993-01-20 1994-07-28 Fuji Electric Co Ltd Magneto-resistives Element, magnetisches Induktionselement und solche enthaltender Dünnschicht-Magnetkopf
DE69412660D1 (de) * 1993-02-17 1998-10-01 Ibm Magnetoresistiver Lesewandler
US5552949A (en) * 1993-03-03 1996-09-03 Kabushiki Kaisha Toshiba Magnetoresistance effect element with improved antiferromagnetic layer
US5440233A (en) * 1993-04-30 1995-08-08 International Business Machines Corporation Atomic layered materials and temperature control for giant magnetoresistive sensor
JPH07254510A (ja) * 1993-08-31 1995-10-03 Yamaha Corp 磁気抵抗材料
US5668523A (en) * 1993-12-29 1997-09-16 International Business Machines Corporation Magnetoresistive sensor employing an exchange-bias enhancing layer
US5666247A (en) * 1994-02-04 1997-09-09 Seagate Technology, Inc. No-field, low power FeMn deposition giving high exchange films
US5648031A (en) * 1994-07-28 1997-07-15 Custom Plastics Molding, Inc. Method of forming antislip surfaces on thermoformed products
JPH0845029A (ja) * 1994-08-01 1996-02-16 Alps Electric Co Ltd 薄膜磁気ヘッド
JP2694806B2 (ja) * 1994-08-29 1997-12-24 日本電気株式会社 磁気抵抗効果素子およびその製造方法
US5756191A (en) * 1994-09-13 1998-05-26 Kabushiki Kaisha Toshiba Exchange coupling film and magnetoresistance effect element
EP0717422B1 (de) * 1994-12-13 2001-08-22 Kabushiki Kaisha Toshiba Film mit Austauschkopplung und magnetoresistives Element
US5764445A (en) * 1995-06-02 1998-06-09 Applied Magnetics Corporation Exchange biased magnetoresistive transducer
US5622874A (en) * 1995-12-14 1997-04-22 Nec Research Institute, Inc. Process for forming a magnetoresistive sensor for a read/write head
DE19628566A1 (de) * 1996-07-16 1998-01-29 Bosch Gmbh Robert Magnetfeldempfindlicher Sensor
WO1998022636A1 (fr) * 1996-11-20 1998-05-28 Kabushiki Kaisha Toshiba Cible pour pulverisation, et film antiferromagnetique et element a effet magnetoresistant formes a l'aide de ladite cible
JP3735443B2 (ja) * 1997-04-03 2006-01-18 株式会社東芝 交換結合膜とそれを用いた磁気抵抗効果素子、磁気ヘッドおよび磁気記憶装置
US6033491A (en) * 1997-09-03 2000-03-07 International Business Machines Corporation Fabrication process of Ni-Mn spin valve sensor
US5993566A (en) * 1997-09-03 1999-11-30 International Business Machines Corporation Fabrication process of Ni-Mn spin valve sensor
US6337215B1 (en) 1997-12-01 2002-01-08 International Business Machines Corporation Magnetic particles having two antiparallel ferromagnetic layers and attached affinity recognition molecules
DE19825392A1 (de) * 1998-05-28 1999-12-09 Hahn Meitner Inst Berlin Gmbh Magnetfeldsensor
US6278594B1 (en) * 1998-10-13 2001-08-21 Storage Technology Corporation Dual element magnetoresistive read head with integral element stabilization
JP3498737B2 (ja) * 2001-01-24 2004-02-16 ヤマハ株式会社 磁気センサの製造方法
US6709767B2 (en) 2001-07-31 2004-03-23 Hitachi Global Storage Technologies Netherlands B.V. In-situ oxidized films for use as cap and gap layers in a spin-valve sensor and methods of manufacture
US20040229762A1 (en) * 2003-05-13 2004-11-18 Rohm And Haas Electronic Materials, L.L.C. Polymer remover

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1524309A (fr) * 1967-03-29 1968-05-10 Centre Nat Rech Scient Mémoires d'informations binaires à structures magnétiques en couches minces
US4103315A (en) * 1977-06-24 1978-07-25 International Business Machines Corporation Antiferromagnetic-ferromagnetic exchange bias films
US4663685A (en) * 1985-08-15 1987-05-05 International Business Machines Magnetoresistive read transducer having patterned longitudinal bias
US4755897A (en) * 1987-04-28 1988-07-05 International Business Machines Corporation Magnetoresistive sensor with improved antiferromagnetic film
US4782413A (en) * 1987-04-28 1988-11-01 International Business Machines Corporation Magnetoresistive sensor with mixed phase antiferromagnetic film
US4825325A (en) * 1987-10-30 1989-04-25 International Business Machines Corporation Magnetoresistive read transducer assembly

Also Published As

Publication number Publication date
EP0432890A2 (de) 1991-06-19
EP0432890B1 (de) 1995-05-17
JPH03144909A (ja) 1991-06-20
DE69019485T2 (de) 1996-01-25
US5014147A (en) 1991-05-07
EP0432890A3 (en) 1992-06-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee