DE69018734D1 - MOS-Feldeffekttransistor mit Seitenwand-Abstandsstücken. - Google Patents

MOS-Feldeffekttransistor mit Seitenwand-Abstandsstücken.

Info

Publication number
DE69018734D1
DE69018734D1 DE69018734T DE69018734T DE69018734D1 DE 69018734 D1 DE69018734 D1 DE 69018734D1 DE 69018734 T DE69018734 T DE 69018734T DE 69018734 T DE69018734 T DE 69018734T DE 69018734 D1 DE69018734 D1 DE 69018734D1
Authority
DE
Germany
Prior art keywords
field effect
effect transistor
sidewall spacers
mos field
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69018734T
Other languages
English (en)
Other versions
DE69018734T2 (de
Inventor
Kaoru Narita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Memory Japan Ltd
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69018734D1 publication Critical patent/DE69018734D1/de
Application granted granted Critical
Publication of DE69018734T2 publication Critical patent/DE69018734T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7836—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a significant overlap between the lightly doped extension and the gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE1990618734 1989-08-24 1990-08-22 MOS-Feldeffekttransistor mit Seitenwand-Abstandsstücken. Expired - Lifetime DE69018734T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21896089 1989-08-24

Publications (2)

Publication Number Publication Date
DE69018734D1 true DE69018734D1 (de) 1995-05-24
DE69018734T2 DE69018734T2 (de) 1995-10-26

Family

ID=16728046

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1990618734 Expired - Lifetime DE69018734T2 (de) 1989-08-24 1990-08-22 MOS-Feldeffekttransistor mit Seitenwand-Abstandsstücken.

Country Status (3)

Country Link
EP (1) EP0414226B1 (de)
JP (1) JPH03155662A (de)
DE (1) DE69018734T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0481559A3 (en) * 1990-10-18 1992-06-03 N.V. Philips' Gloeilampenfabrieken A method of fabricating a field-effect transistor
JPH05283626A (ja) * 1991-07-12 1993-10-29 Nec Corp 半導体集積回路装置
JPH1050988A (ja) * 1996-07-31 1998-02-20 Sharp Corp 絶縁ゲート型電界効果トランジスタ及びその製造方法
CN114334662B (zh) * 2022-03-10 2022-09-27 广州粤芯半导体技术有限公司 一种半导体器件的形成方法及半导体器件

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60177677A (ja) * 1984-02-23 1985-09-11 Seiko Epson Corp 半導体装置
DE3581797D1 (de) * 1984-12-27 1991-03-28 Toshiba Kawasaki Kk Misfet mit niedrigdotiertem drain und verfahren zu seiner herstellung.
US4680603A (en) * 1985-04-12 1987-07-14 General Electric Company Graded extended drain concept for reduced hot electron effect
JPS6473676A (en) * 1987-09-16 1989-03-17 Hitachi Ltd Semiconductor integrated circuit device

Also Published As

Publication number Publication date
DE69018734T2 (de) 1995-10-26
EP0414226B1 (de) 1995-04-19
JPH03155662A (ja) 1991-07-03
EP0414226A3 (de) 1991-04-03
EP0414226A2 (de) 1991-02-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC CORP., TOKIO/TOKYO, JP

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8327 Change in the person/name/address of the patent owner

Owner name: ELPIDA MEMORY, INC., TOKYO, JP