DE69018695D1 - Einleitung von Reaktionsgasen bei der Herstellung von integrierten Schaltungen. - Google Patents

Einleitung von Reaktionsgasen bei der Herstellung von integrierten Schaltungen.

Info

Publication number
DE69018695D1
DE69018695D1 DE69018695T DE69018695T DE69018695D1 DE 69018695 D1 DE69018695 D1 DE 69018695D1 DE 69018695 T DE69018695 T DE 69018695T DE 69018695 T DE69018695 T DE 69018695T DE 69018695 D1 DE69018695 D1 DE 69018695D1
Authority
DE
Germany
Prior art keywords
introduction
manufacture
integrated circuits
reaction gases
gases
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69018695T
Other languages
English (en)
Other versions
DE69018695T2 (de
Inventor
David K Carlson
Paul R Lindstrom
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE69018695D1 publication Critical patent/DE69018695D1/de
Publication of DE69018695T2 publication Critical patent/DE69018695T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69018695T 1989-05-19 1990-03-28 Einleitung von Reaktionsgasen bei der Herstellung von integrierten Schaltungen. Expired - Fee Related DE69018695T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/353,929 US4928626A (en) 1989-05-19 1989-05-19 Reactant gas injection for IC processing

Publications (2)

Publication Number Publication Date
DE69018695D1 true DE69018695D1 (de) 1995-05-24
DE69018695T2 DE69018695T2 (de) 1995-08-17

Family

ID=23391192

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69018695T Expired - Fee Related DE69018695T2 (de) 1989-05-19 1990-03-28 Einleitung von Reaktionsgasen bei der Herstellung von integrierten Schaltungen.

Country Status (5)

Country Link
US (1) US4928626A (de)
EP (1) EP0398480B1 (de)
JP (1) JPH07105355B2 (de)
KR (1) KR0160287B1 (de)
DE (1) DE69018695T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5116181A (en) * 1989-05-19 1992-05-26 Applied Materials, Inc. Robotically loaded epitaxial deposition apparatus
US5104276A (en) * 1989-05-19 1992-04-14 Applied Materials, Inc. Robotically loaded epitaxial deposition apparatus
US6033483A (en) 1994-06-30 2000-03-07 Applied Materials, Inc. Electrically insulating sealing structure and its method of use in a high vacuum physical vapor deposition apparatus
EP0757117B1 (de) * 1995-08-01 1999-07-07 MEMC Electronic Materials, Inc. Verfahren und Vorrichtung zur Materialabscheidung auf einer Halbleiterscheibe
US5908504A (en) * 1995-09-20 1999-06-01 Memc Electronic Materials, Inc. Method for tuning barrel reactor purge system
US5746834A (en) * 1996-01-04 1998-05-05 Memc Electronics Materials, Inc. Method and apparatus for purging barrel reactors
US5843234A (en) * 1996-05-10 1998-12-01 Memc Electronic Materials, Inc. Method and apparatus for aiming a barrel reactor nozzle
US6039807A (en) * 1998-03-17 2000-03-21 Memc Electronic Materials, Inc. Apparatus for moving exhaust tube of barrel reactor
US6080241A (en) * 1998-09-02 2000-06-27 Emcore Corporation Chemical vapor deposition chamber having an adjustable flow flange
IT1312150B1 (it) * 1999-03-25 2002-04-09 Lpe Spa Perfezionata camera di reazione per reattore epitassiale
US6347749B1 (en) * 2000-02-09 2002-02-19 Moore Epitaxial, Inc. Semiconductor processing reactor controllable gas jet assembly
US6328221B1 (en) * 2000-02-09 2001-12-11 Moore Epitaxial, Inc. Method for controlling a gas injector in a semiconductor processing reactor
US6986814B2 (en) * 2001-12-20 2006-01-17 General Electric Company Gas distributor for vapor coating method and container
US20040231798A1 (en) * 2002-09-13 2004-11-25 Applied Materials, Inc. Gas delivery system for semiconductor processing
KR100631972B1 (ko) * 2005-02-28 2006-10-11 삼성전기주식회사 화학기상증착 공정을 이용한 초격자 반도체 구조를 제조하는 방법
US8985911B2 (en) * 2009-03-16 2015-03-24 Alta Devices, Inc. Wafer carrier track
US9441295B2 (en) * 2010-05-14 2016-09-13 Solarcity Corporation Multi-channel gas-delivery system
KR101350779B1 (ko) 2012-06-29 2014-01-13 주식회사 티지오테크 가스공급장치와 이를 포함한 배치식 에피택셜층 형성장치
US9597701B2 (en) * 2013-12-31 2017-03-21 Lam Research Ag Apparatus for treating surfaces of wafer-shaped articles
US9657397B2 (en) * 2013-12-31 2017-05-23 Lam Research Ag Apparatus for treating surfaces of wafer-shaped articles
US20160359080A1 (en) 2015-06-07 2016-12-08 Solarcity Corporation System, method and apparatus for chemical vapor deposition
US9748434B1 (en) 2016-05-24 2017-08-29 Tesla, Inc. Systems, method and apparatus for curing conductive paste
US9954136B2 (en) 2016-08-03 2018-04-24 Tesla, Inc. Cassette optimized for an inline annealing system
US10115856B2 (en) 2016-10-31 2018-10-30 Tesla, Inc. System and method for curing conductive paste using induction heating

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SU598630A1 (ru) * 1974-08-15 1978-02-21 Предприятие П/Я Р-6707 Устройство ввода газов в реакционную камеру
SU592438A1 (ru) * 1975-08-01 1978-02-15 Предприятие П/Я В-8495 Устройство ввода газа в реактор вертикального типа дл осаждени слоев
JPS60215594A (ja) * 1984-04-06 1985-10-28 Fujitsu Ltd 気相成長装置
US4649859A (en) * 1985-02-19 1987-03-17 The United States Of America As Represented By The United States Department Of Energy Reactor design for uniform chemical vapor deposition-grown films without substrate rotation
JP2882605B2 (ja) * 1987-08-27 1999-04-12 テキサス インスツルメンツ インコーポレイテッド 歪み層超格子構造の連続成長方法

Also Published As

Publication number Publication date
DE69018695T2 (de) 1995-08-17
EP0398480A2 (de) 1990-11-22
US4928626A (en) 1990-05-29
EP0398480B1 (de) 1995-04-19
JPH034520A (ja) 1991-01-10
KR900019145A (ko) 1990-12-24
JPH07105355B2 (ja) 1995-11-13
EP0398480A3 (de) 1991-01-23
KR0160287B1 (ko) 1999-02-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee