DE3770889D1 - Herstellung von kubischem bornitrid. - Google Patents

Herstellung von kubischem bornitrid.

Info

Publication number
DE3770889D1
DE3770889D1 DE8787306632T DE3770889T DE3770889D1 DE 3770889 D1 DE3770889 D1 DE 3770889D1 DE 8787306632 T DE8787306632 T DE 8787306632T DE 3770889 T DE3770889 T DE 3770889T DE 3770889 D1 DE3770889 D1 DE 3770889D1
Authority
DE
Germany
Prior art keywords
manufacture
bornitride
cubic
cubic bornitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8787306632T
Other languages
English (en)
Inventor
Lesley Kay Hedges
Stuart Hedley Robertson
Geoffrey John Davies
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
De Beers Industrial Diamond Division Pty Ltd
Original Assignee
De Beers Industrial Diamond Division Pty Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by De Beers Industrial Diamond Division Pty Ltd filed Critical De Beers Industrial Diamond Division Pty Ltd
Application granted granted Critical
Publication of DE3770889D1 publication Critical patent/DE3770889D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0605—Composition of the material to be processed
    • B01J2203/0645—Boronitrides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/065—Composition of the material produced
    • B01J2203/066—Boronitrides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/0675—Structural or physico-chemical features of the materials processed
    • B01J2203/068—Crystal growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1096—Apparatus for crystallization from liquid or supercritical state including pressurized crystallization means [e.g., hydrothermal]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Products (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE8787306632T 1986-07-30 1987-07-28 Herstellung von kubischem bornitrid. Expired - Lifetime DE3770889D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ZA865695 1986-07-30

Publications (1)

Publication Number Publication Date
DE3770889D1 true DE3770889D1 (de) 1991-07-25

Family

ID=25578501

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8787306632T Expired - Lifetime DE3770889D1 (de) 1986-07-30 1987-07-28 Herstellung von kubischem bornitrid.

Country Status (4)

Country Link
US (1) US4883648A (de)
EP (1) EP0255327B1 (de)
JP (1) JPH074518B2 (de)
DE (1) DE3770889D1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0749101B2 (ja) * 1987-05-01 1995-05-31 科学技術庁無機材質研究所長 半導体立方晶窒化ほう素単結晶の育成法
JPH01224039A (ja) * 1988-03-03 1989-09-07 Sumitomo Electric Ind Ltd 立方晶窒化硼素ｐ−ｎ接合体の作製方法
JPH02192494A (ja) * 1989-01-20 1990-07-30 Sumitomo Electric Ind Ltd 複合材料
US5326380A (en) * 1992-10-26 1994-07-05 Smith International, Inc. Synthesis of polycrystalline cubic boron nitride
US5271749A (en) * 1992-11-03 1993-12-21 Smith International, Inc. Synthesis of polycrystalline cubic boron nitride
US5697994A (en) * 1995-05-15 1997-12-16 Smith International, Inc. PCD or PCBN cutting tools for woodworking applications
FR2796657B1 (fr) * 1999-07-20 2001-10-26 Thomson Csf Procede de synthese de materiaux massifs monocristallins en nitrures d'elements de la colonne iii du tableau de la classification periodique
JP5046459B2 (ja) * 1999-11-19 2012-10-10 デ ビアス インダストリアル ダイアモンズ （プロプライエタリイ）リミテッド 立方晶窒化ホウ素クラスター
US7214359B2 (en) * 2003-02-03 2007-05-08 Showa Denko K.K. Cubic boron nitride, catalyst for synthesizing cubic boron nitride, and method for producing cubic boron nitride
CN104607110B (zh) * 2015-01-30 2017-01-18 富耐克超硬材料股份有限公司 立方氮化硼晶体的制造方法
CN104860273B (zh) * 2015-03-25 2017-03-29 孙旭阳 利用熔融态反应床制备二维六方氮化硼的方法
CN108144554B (zh) * 2017-12-04 2020-06-30 郑州中南杰特超硬材料有限公司 一种新型金刚石合成柱的制作工艺
CN113818072A (zh) * 2021-10-22 2021-12-21 郑州中南杰特超硬材料有限公司 一种六方氮化硼单晶生长方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3192015A (en) * 1963-04-01 1965-06-29 Gen Electric Growth of large cubic form of boron nitride crystals
JPS5938165B2 (ja) * 1981-03-20 1984-09-14 科学技術庁無機材質研究所長 立方晶窒化ほう素の製造法
JPS596808A (ja) * 1982-06-30 1984-01-13 加藤　幾次郎 収穫機におけるホツパ−
JPS60131811A (ja) * 1983-12-16 1985-07-13 Sumitomo Electric Ind Ltd 窒化硼素の合成方法
US4551195A (en) * 1984-09-25 1985-11-05 Showa Denko Kabushiki Kaisha Method for growing boron nitride crystals of cubic system
DE3674329D1 (de) * 1985-09-24 1990-10-25 Sumitomo Electric Industries Verfahren zur synthese von bornitrid des kubischen systems.
DE3534646A1 (de) * 1985-09-28 1987-04-02 Merck Patent Gmbh Fluessigkristalline phasen aufweisende polymermaterialien

Also Published As

Publication number Publication date
US4883648A (en) 1989-11-28
EP0255327A3 (en) 1988-08-31
EP0255327B1 (de) 1991-06-19
JPH074518B2 (ja) 1995-01-25
JPS6339617A (ja) 1988-02-20
EP0255327A2 (de) 1988-02-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee