DE69015177T2 - Speicheranordnung, gebildet mit amorphem silizium. - Google Patents

Speicheranordnung, gebildet mit amorphem silizium.

Info

Publication number
DE69015177T2
DE69015177T2 DE69015177T DE69015177T DE69015177T2 DE 69015177 T2 DE69015177 T2 DE 69015177T2 DE 69015177 T DE69015177 T DE 69015177T DE 69015177 T DE69015177 T DE 69015177T DE 69015177 T2 DE69015177 T2 DE 69015177T2
Authority
DE
Germany
Prior art keywords
pct
amorphous silicon
storage arrangement
sec
selection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69015177T
Other languages
English (en)
Other versions
DE69015177D1 (de
Inventor
Alan Owen
Anthony Snell
Janos Hajto
Peter Lecomber
Mervyn Rose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
British Telecommunications PLC
Original Assignee
British Telecommunications PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by British Telecommunications PLC filed Critical British Telecommunications PLC
Publication of DE69015177D1 publication Critical patent/DE69015177D1/de
Application granted granted Critical
Publication of DE69015177T2 publication Critical patent/DE69015177T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/25—Multistable switching devices, e.g. memristors based on bulk electronic defects, e.g. trapping of electrons
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H10N70/023—Formation of the switching material, e.g. layer deposition by chemical vapor deposition, e.g. MOCVD, ALD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Other compounds of groups 13-15, e.g. elemental or compound semiconductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/90—Bulk effect device making
DE69015177T 1989-05-11 1990-05-04 Speicheranordnung, gebildet mit amorphem silizium. Expired - Fee Related DE69015177T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB898910854A GB8910854D0 (en) 1989-05-11 1989-05-11 Semiconductor device
PCT/GB1990/000692 WO1990013921A1 (en) 1989-05-11 1990-05-04 Semiconductor device

Publications (2)

Publication Number Publication Date
DE69015177D1 DE69015177D1 (de) 1995-01-26
DE69015177T2 true DE69015177T2 (de) 1995-05-04

Family

ID=10656585

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69015177T Expired - Fee Related DE69015177T2 (de) 1989-05-11 1990-05-04 Speicheranordnung, gebildet mit amorphem silizium.

Country Status (10)

Country Link
US (1) US5360981A (de)
EP (1) EP0471737B1 (de)
JP (1) JPH0758813B2 (de)
AT (1) ATE115773T1 (de)
AU (1) AU628562B2 (de)
CA (1) CA2051112C (de)
DE (1) DE69015177T2 (de)
GB (1) GB8910854D0 (de)
HK (1) HK138296A (de)
WO (1) WO1990013921A1 (de)

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HK138296A (en) 1996-08-02
DE69015177D1 (de) 1995-01-26
ATE115773T1 (de) 1994-12-15
CA2051112A1 (en) 1990-11-12
AU628562B2 (en) 1992-09-17
CA2051112C (en) 1994-03-29
EP0471737B1 (de) 1994-12-14
US5360981A (en) 1994-11-01
WO1990013921A1 (en) 1990-11-15
JPH0758813B2 (ja) 1995-06-21
GB8910854D0 (en) 1989-06-28
EP0471737A1 (de) 1992-02-26
JPH04504331A (ja) 1992-07-30
AU5565590A (en) 1990-11-29

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