DE69011241D1 - Kammer zur ablagerung von diamant. - Google Patents

Kammer zur ablagerung von diamant.

Info

Publication number
DE69011241D1
DE69011241D1 DE69011241T DE69011241T DE69011241D1 DE 69011241 D1 DE69011241 D1 DE 69011241D1 DE 69011241 T DE69011241 T DE 69011241T DE 69011241 T DE69011241 T DE 69011241T DE 69011241 D1 DE69011241 D1 DE 69011241D1
Authority
DE
Germany
Prior art keywords
substrate
hydrogen
chamber
gap
graphite body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69011241T
Other languages
English (en)
Inventor
Gordon L Cann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Celestech Inc
Original Assignee
Celestech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Celestech Inc filed Critical Celestech Inc
Application granted granted Critical
Publication of DE69011241D1 publication Critical patent/DE69011241D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Primary Cells (AREA)
DE69011241T 1989-01-06 1990-01-08 Kammer zur ablagerung von diamant. Expired - Lifetime DE69011241D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US29396889A 1989-01-06 1989-01-06
PCT/US1990/000192 WO1990007586A1 (en) 1989-01-06 1990-01-08 Improved diamond deposition cell

Publications (1)

Publication Number Publication Date
DE69011241D1 true DE69011241D1 (de) 1994-09-08

Family

ID=23131327

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69011241T Expired - Lifetime DE69011241D1 (de) 1989-01-06 1990-01-08 Kammer zur ablagerung von diamant.

Country Status (7)

Country Link
EP (1) EP0414842B1 (de)
JP (1) JPH03504254A (de)
AT (1) ATE109516T1 (de)
AU (1) AU5022990A (de)
CA (1) CA2024606A1 (de)
DE (1) DE69011241D1 (de)
WO (1) WO1990007586A1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0184849B1 (ko) * 1990-07-18 1999-05-01 하지메 히토추야나기 다이아몬드 제조방법 및 장치
DE4217328C1 (en) * 1992-05-26 1993-09-02 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 80636 Muenchen, De Diamond layer CVD appts. - has closed gas circuit contg. carbon reactor for process gas regeneration
US5441013A (en) * 1993-03-23 1995-08-15 At&T Bell Laboratories Method for growing continuous diamond films
CN110344021A (zh) * 2018-04-04 2019-10-18 中国电子科技集团公司第十二研究所 石墨加热化学气相沉积超纳米金刚石的设备
CN109068538A (zh) * 2018-08-23 2018-12-21 西安交通大学 一种基于金刚石微流通道的液冷散热器结构及其制作方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4152182A (en) * 1978-05-15 1979-05-01 International Business Machines Corporation Process for producing electronic grade aluminum nitride films utilizing the reduction of aluminum oxide
US4647512A (en) * 1986-03-20 1987-03-03 The Perkin-Elmer Corporation Diamond-like carbon films and process for production thereof

Also Published As

Publication number Publication date
CA2024606A1 (en) 1990-07-07
JPH03504254A (ja) 1991-09-19
ATE109516T1 (de) 1994-08-15
EP0414842B1 (de) 1994-08-03
AU5022990A (en) 1990-08-01
EP0414842A1 (de) 1991-03-06
WO1990007586A1 (en) 1990-07-12

Similar Documents

Publication Publication Date Title
CA2312790A1 (en) Growth of very uniform silicon carbide epitaxial layers
MY107107A (en) Method for preparing vaporized reactants for chemical vapor deposition.
SE7613456L (sv) Kiselkarbidtrad och forfarande for framstellning av den
AU3256484A (en) Chemical vapour deposition
BR9901287A (pt) Aparelho de deposição por vapor quìmico para deposso de deposição por vapor quìmico.
TR200001777T2 (tr) Organik maddelerin ve madde karışımlarının gazlaştırılma metodu.
Sommer et al. Thermodynamic analysis of the chemical vapor deposition of diamond films
CA2175041A1 (en) Chemical vapour infiltration process of a pyrocarbon matrix within a porous substrate with creation of a temperature gradient in the substrate
DE69011241D1 (de) Kammer zur ablagerung von diamant.
JPS54145537A (en) Preparation of electrophotographic image forming material
LEWIS et al. Char gasification: Part II. oxidation results
US3011912A (en) Process for depositing beta silicon carbide
KR960034479A (ko) 산화물박막의 제조방법 및 그것에 사용되는 화학증착장치
KR900001612A (ko) 산화 비스무트의 화학 증착방법
JPS5767009A (en) Formation of film
SE7701615L (sv) Drift av spaltgasgenerator
JPS649900A (en) Jig for heat-treating semiconductor wafer
Ermolaev et al. AIP Conference Proceedings
KR930018062A (ko) 화학증착 다이아몬드 반응기용 예비가열장치
Starr et al. Modeling of chemical vapor infiltration for ceramic composite fabrication
JPS5616018A (en) Surface combustion
GB1150958A (en) Improvements relating to Highly Orientated Pyrolytic Graphite
JPS5532761A (en) Production of silicon carbide-coated graphite seal material
COLIN et al. On the development of deposits of titanium oxide by the hot front method(Refractory titanium oxide deposition by hot front method of chemical reaction in vapor phase)
Yep et al. Boron nitride semiconductor films

Legal Events

Date Code Title Description
8332 No legal effect for de