DE69009635D1 - Verfahren zur Verhinderung von Rückseitenwachstum auf Substraten in einer Anlage zur Dampfphasenbeschichtung. - Google Patents

Verfahren zur Verhinderung von Rückseitenwachstum auf Substraten in einer Anlage zur Dampfphasenbeschichtung.

Info

Publication number
DE69009635D1
DE69009635D1 DE69009635T DE69009635T DE69009635D1 DE 69009635 D1 DE69009635 D1 DE 69009635D1 DE 69009635 T DE69009635 T DE 69009635T DE 69009635 T DE69009635 T DE 69009635T DE 69009635 D1 DE69009635 D1 DE 69009635D1
Authority
DE
Germany
Prior art keywords
substrates
vapor phase
phase coating
coating installation
preventing backside
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69009635T
Other languages
English (en)
Other versions
DE69009635T2 (de
Inventor
Jitendra Singh Goela
Roy D Jaworski
Raymond L Taylor
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CVD Inc
Original Assignee
CVD Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CVD Inc filed Critical CVD Inc
Application granted granted Critical
Publication of DE69009635D1 publication Critical patent/DE69009635D1/de
Publication of DE69009635T2 publication Critical patent/DE69009635T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)
DE69009635T 1989-09-07 1990-08-30 Verfahren zur Verhinderung von Rückseitenwachstum auf Substraten in einer Anlage zur Dampfphasenbeschichtung. Expired - Fee Related DE69009635T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/403,957 US4963393A (en) 1989-09-07 1989-09-07 Method to prevent backside growth on substrates in a vapor deposition system

Publications (2)

Publication Number Publication Date
DE69009635D1 true DE69009635D1 (de) 1994-07-14
DE69009635T2 DE69009635T2 (de) 1994-09-22

Family

ID=23597561

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69009635T Expired - Fee Related DE69009635T2 (de) 1989-09-07 1990-08-30 Verfahren zur Verhinderung von Rückseitenwachstum auf Substraten in einer Anlage zur Dampfphasenbeschichtung.

Country Status (6)

Country Link
US (1) US4963393A (de)
EP (1) EP0416813B1 (de)
JP (1) JPH0670274B2 (de)
CA (1) CA2023278C (de)
DE (1) DE69009635T2 (de)
IL (1) IL95414A (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2655364B1 (fr) * 1989-12-01 1992-04-10 Europ Propulsion Procede de fabrication d'une piece en materiau composite, notamment a texture fibres de carbone ou refractaires et matrice carbone ou ceramique.
FR2659949B1 (fr) * 1990-03-26 1992-12-04 Europ Propulsion Procede de conformation d'une texture fibreuse de renfort pour la fabrication d'une piece en materiau composite.
US5133284A (en) * 1990-07-16 1992-07-28 National Semiconductor Corp. Gas-based backside protection during substrate processing
KR100243784B1 (ko) * 1990-12-05 2000-02-01 조셉 제이. 스위니 웨이퍼의 전방부 모서리와후방부에서의 증착을 방지하는 cvd웨이퍼 처리용 수동 실드
US5304248A (en) * 1990-12-05 1994-04-19 Applied Materials, Inc. Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions
US5665430A (en) * 1992-09-30 1997-09-09 The United States Of America As Represented By The Secretary Of The Navy Chemical vapor deposition method for depositing diamond using a high temperature vacuum substrate mount
US5328722A (en) * 1992-11-06 1994-07-12 Applied Materials, Inc. Metal chemical vapor deposition process using a shadow ring
US5292554A (en) * 1992-11-12 1994-03-08 Applied Materials, Inc. Deposition apparatus using a perforated pumping plate
US5628038A (en) * 1993-04-16 1997-05-06 Canon Kabushiki Kaisha Camera having a sub-mirror unit
US5354580A (en) * 1993-06-08 1994-10-11 Cvd Incorporated Triangular deposition chamber for a vapor deposition system
US5741445A (en) * 1996-02-06 1998-04-21 Cvd, Incorporated Method of making lightweight closed-back mirror
US5980638A (en) * 1997-01-30 1999-11-09 Fusion Systems Corporation Double window exhaust arrangement for wafer plasma processor
US6228297B1 (en) 1998-05-05 2001-05-08 Rohm And Haas Company Method for producing free-standing silicon carbide articles
US6042758A (en) * 1998-05-05 2000-03-28 Cvd, Inc. Precision replication by chemical vapor deposition
US6464912B1 (en) 1999-01-06 2002-10-15 Cvd, Incorporated Method for producing near-net shape free standing articles by chemical vapor deposition
EP1388592B1 (de) * 2002-07-31 2010-08-25 Hilmar Bode Verfahren und Vorrichtung zur Isolierung eines Oberflächenbereichs eines Werkstücks
US20040083976A1 (en) * 2002-09-25 2004-05-06 Silterra Malaysia Sdn. Bhd. Modified deposition ring to eliminate backside and wafer edge coating
KR101332206B1 (ko) * 2005-12-02 2013-11-25 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨. 반도체 처리 방법
US11326255B2 (en) * 2013-02-07 2022-05-10 Uchicago Argonne, Llc ALD reactor for coating porous substrates
US11111578B1 (en) 2020-02-13 2021-09-07 Uchicago Argonne, Llc Atomic layer deposition of fluoride thin films
US11901169B2 (en) 2022-02-14 2024-02-13 Uchicago Argonne, Llc Barrier coatings

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6035994B2 (ja) * 1978-07-10 1985-08-17 日本ピラ−工業株式会社 複合部材の製造方法
US4448797A (en) * 1981-02-04 1984-05-15 Xerox Corporation Masking techniques in chemical vapor deposition
US4705659A (en) * 1985-04-01 1987-11-10 Motorola, Inc. Carbon film oxidation for free-standing film formation
CA1267529A (en) * 1986-06-13 1990-04-10 Seinosuke Horiki Masking member

Also Published As

Publication number Publication date
JPH0670274B2 (ja) 1994-09-07
EP0416813A2 (de) 1991-03-13
EP0416813A3 (en) 1991-04-10
IL95414A (en) 1994-07-31
JPH03100177A (ja) 1991-04-25
CA2023278C (en) 1993-08-31
DE69009635T2 (de) 1994-09-22
EP0416813B1 (de) 1994-06-08
CA2023278A1 (en) 1991-03-08
IL95414A0 (en) 1991-06-30
US4963393A (en) 1990-10-16

Similar Documents

Publication Publication Date Title
DE69009635T2 (de) Verfahren zur Verhinderung von Rückseitenwachstum auf Substraten in einer Anlage zur Dampfphasenbeschichtung.
DE3851191D1 (de) Verfahren zur Beschichtung eines Substrates.
DE69413346T2 (de) Verfahren zur Beschichtung einer Abzweigeleitung
DE69414496T2 (de) Verfahren zur Beschichtung einer Abzweigeleitung
DE69120743T2 (de) Verfahren zur Plasma-Dampfphasenabscheidung einer isolierenden Schicht auf einer Unterlage mit Puls-moduliertem Plasma
DE59007942D1 (de) Vorrichtung zum Beschichten von Substraten.
DE69434751D1 (de) Verfahren zur Beschichtung von durchsichtigen Substraten mit Metallnitrid
DE59901173D1 (de) Vorrichtung zur Beschichtung von Substraten in einer Vakuumkammer
DE69028505T2 (de) Mit einer Phasenaustauschtinte bedruckte Substrate und Verfahren zu ihrer Herstellung
DE69304509D1 (de) Verfahren zur Beschichtung einer Abzweigeleitung
DE69206748D1 (de) Verfahren zum Tiefziehen von Metallblech mit einer filmartigen organischen Beschichtung
DE69116970T2 (de) Verfahren zur Chromatierung von einer Stahlplatte mit einer Beschichtung auf Zink-Basis
DE69029075D1 (de) Reinigungsverfahren zur Entfernung von Ablagerungen auf dem Träger in einer CVD-Anlage
DE3771040D1 (de) Metallischer ueberzug auf einem mineralischen substrat.
DE68919346D1 (de) Verfahren zur Gasphasenabscheidung von Polysilanen.
DE69120834T2 (de) Verfahren zur Zufuhr einer Beschichtungsflüssigkeit
DE69510906T2 (de) Verfahren zur Herstellung einer unlöslichen Beschichtung auf einem Substrat
DE68921253T2 (de) Verfahren zur Abscheidung einer dünnen Supraleiterschicht.
DE58909380D1 (de) Verfahren zur Vorbehandlung von Bauteilen einer gebauten Nockenwelle.
DE69111770T2 (de) Verfahren zur Abscheidung einer Zinkoxidschicht auf ein Substrat.
DE69114823T2 (de) Verfahren zur Abscheidung einer Zinkoxidschicht auf ein Substrat.
DE69313497T2 (de) Verfahren zur Verbesserung einer paraffinischen Beschichtung
DE59207121D1 (de) Verdampferschiffchen für eine Vorrichtung zur Beschichtung von Substraten
DE69304130T2 (de) Verfahren zur Abscheidung eines ohmischen Kontaktes auf einer ZnSe-Schicht
DE59201775D1 (de) Vorrichtung zur Beschichtung von Substraten für Kathodenzerstäubungsanlagen.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee