DE69029075D1 - Reinigungsverfahren zur Entfernung von Ablagerungen auf dem Träger in einer CVD-Anlage - Google Patents

Reinigungsverfahren zur Entfernung von Ablagerungen auf dem Träger in einer CVD-Anlage

Info

Publication number
DE69029075D1
DE69029075D1 DE69029075T DE69029075T DE69029075D1 DE 69029075 D1 DE69029075 D1 DE 69029075D1 DE 69029075 T DE69029075 T DE 69029075T DE 69029075 T DE69029075 T DE 69029075T DE 69029075 D1 DE69029075 D1 DE 69029075D1
Authority
DE
Germany
Prior art keywords
carrier
cleaning process
cvd system
removing deposits
deposits
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69029075T
Other languages
English (en)
Other versions
DE69029075T2 (de
Inventor
Mei Chang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE69029075D1 publication Critical patent/DE69029075D1/de
Application granted granted Critical
Publication of DE69029075T2 publication Critical patent/DE69029075T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
DE69029075T 1989-08-25 1990-08-24 Reinigungsverfahren zur Entfernung von Ablagerungen auf dem Träger in einer CVD-Anlage Expired - Fee Related DE69029075T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US39868989A 1989-08-25 1989-08-25

Publications (2)

Publication Number Publication Date
DE69029075D1 true DE69029075D1 (de) 1996-12-12
DE69029075T2 DE69029075T2 (de) 1997-05-22

Family

ID=23576392

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69029075T Expired - Fee Related DE69029075T2 (de) 1989-08-25 1990-08-24 Reinigungsverfahren zur Entfernung von Ablagerungen auf dem Träger in einer CVD-Anlage

Country Status (4)

Country Link
EP (1) EP0418592B1 (de)
JP (1) JP3004696B2 (de)
KR (1) KR0181728B1 (de)
DE (1) DE69029075T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3194971B2 (ja) * 1990-01-08 2001-08-06 エルエスアイ ロジック コーポレーション Ｃｖｄチャンバに導入されるプロセスガスをｃｖｄチャンバへの導入前に濾過するための装置
FR2695410B1 (fr) * 1992-09-04 1994-11-18 France Telecom Procédé de prétraitement d'un substrat pour le dépôt sélectif de tungstène.
US5413670A (en) * 1993-07-08 1995-05-09 Air Products And Chemicals, Inc. Method for plasma etching or cleaning with diluted NF3
TW241375B (de) * 1993-07-26 1995-02-21 Air Prod & Chem
JP3247270B2 (ja) * 1994-08-25 2002-01-15 東京エレクトロン株式会社 処理装置及びドライクリーニング方法
US5714011A (en) * 1995-02-17 1998-02-03 Air Products And Chemicals Inc. Diluted nitrogen trifluoride thermal cleaning process
US6090705A (en) * 1998-01-20 2000-07-18 Tokyo Electron Limited Method of eliminating edge effect in chemical vapor deposition of a metal
DE10029523A1 (de) * 2000-06-21 2002-01-10 Messer Griesheim Gmbh Verfahren und Vorrichtung zum Reinigen eines PVD- oder CVD-Reaktors sowie von Abgasleitungen desselben
US7097716B2 (en) 2002-10-17 2006-08-29 Applied Materials, Inc. Method for performing fluorocarbon chamber cleaning to eliminate fluorine memory effect
JP4773069B2 (ja) * 2004-07-16 2011-09-14 旭ダイヤモンド工業株式会社 切断用超砥粒工具
JP5874051B2 (ja) * 2011-11-17 2016-03-01 パナソニックＩｐマネジメント株式会社 半導体発光装置の製造方法およびプラズマを利用したクリーニング方法
WO2016093431A1 (ko) * 2014-12-12 2016-06-16 주식회사 티씨케이 서셉터 재생방법
CN105702561B (zh) 2014-12-12 2018-09-18 韩国东海炭素株式会社 半导体处理组件再生方法
US10622214B2 (en) 2017-05-25 2020-04-14 Applied Materials, Inc. Tungsten defluorination by high pressure treatment
KR102424993B1 (ko) * 2017-09-11 2022-07-25 에스케이하이닉스 주식회사 반도체 장치의 제조방법
CN115637418A (zh) * 2022-10-12 2023-01-24 中微半导体设备(上海)股份有限公司 形成涂层的方法、涂覆装置、零部件及等离子体反应装置
CN115394637A (zh) * 2022-10-27 2022-11-25 合肥晶合集成电路股份有限公司 半导体器件及其制作方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61127122A (ja) * 1984-11-26 1986-06-14 Semiconductor Energy Lab Co Ltd 薄膜形成方法
JPH0689455B2 (ja) * 1984-12-17 1994-11-09 株式会社半導体エネルギー研究所 薄膜形成方法
ES2081806T3 (es) * 1987-06-26 1996-03-16 Applied Materials Inc Procedimiento de autolimpieza de una camara de reactor.
JPH01152274A (ja) * 1987-12-09 1989-06-14 Iwatani Internatl Corp 膜形成操作系におけるフッ化塩素クリーニング後の汚染除去方法

Also Published As

Publication number Publication date
KR910005405A (ko) 1991-03-30
DE69029075T2 (de) 1997-05-22
JPH03120368A (ja) 1991-05-22
JP3004696B2 (ja) 2000-01-31
EP0418592A1 (de) 1991-03-27
EP0418592B1 (de) 1996-11-06
KR0181728B1 (ko) 1999-04-15

Similar Documents

Publication Publication Date Title
DE69029075T2 (de) Reinigungsverfahren zur Entfernung von Ablagerungen auf dem Träger in einer CVD-Anlage
DE69032824T2 (de) Verfahren zum Laseraufdampfen
DE68920490D1 (de) Verfahren zur Auswahl des geringstwertigen Weges in einem Kommunikationsnetz.
DE3870414D1 (de) Verfahren zum selbstreinigen von ablaufsystemen in einer reinigungsmaschine, insbesondere einer geschirrspuelmaschine und vorrichtung zur durchfuehrung des verfahrens.
DE59009440D1 (de) Verfahren zum Anfahren einer Kombianlage.
DE58906609D1 (de) Verfahren und Vorrichtung zum Reinigen einer Sprühvorrichtung.
DE69325252D1 (de) Verfahren zur Behandlung einer Oberfläche
DE3761722D1 (de) Vorrichtung zur zerstaeubung einer fluessigkeit.
DE3786410T2 (de) Verfahren zur Wahl von Ersatzleitungen in einer zweidimensionalen redundanten Matrix.
DE69316969T2 (de) Verfahren zum Betrieb einer Kälteanlage
DE69009635D1 (de) Verfahren zur Verhinderung von Rückseitenwachstum auf Substraten in einer Anlage zur Dampfphasenbeschichtung.
DE59102191D1 (de) Verfahren zum betreiben einer anordnung zur gewebestimulation.
DE69409066T2 (de) Verfahren zur Behandlung einer Oberfläche
DE69016076T2 (de) Verfahren zur Behandlung einer Metallfläche.
DE69020200D1 (de) Verfahren zum Entfernen von Titannitrid.
DE69322784D1 (de) Verfahren zur durchführung einer vermittlung im zeit- oder raumbereich
DE69114371D1 (de) Verfahren zum Gasphasenabscheiden.
DE3783502T2 (de) Verfahren zur reinigung eines caroten enthaltenden konzentrats.
DE69316555D1 (de) Vorrichtung zur Zuteilung von Glasposten für eine Glasmaschine
DE59105998D1 (de) Vorrichtung zum Betreiben einer Scheibenwischanlage.
DE59009606D1 (de) Vorrichtung zur Entnahme von Falzprodukten aus einer Trägerstruktur.
DE69324728D1 (de) Verfahren zur Reinigung von Phenol
DE68918000T2 (de) Verfahren zur Entfernung von Rückständen.
DE69113941D1 (de) Verfahren zur Reinigung von Artikeln.
DE68907143T2 (de) Verfahren zur Reinigung von Kohlenstofffluoriden.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee