DE69114371D1 - Verfahren zum Gasphasenabscheiden. - Google Patents

Verfahren zum Gasphasenabscheiden.

Info

Publication number
DE69114371D1
DE69114371D1 DE69114371T DE69114371T DE69114371D1 DE 69114371 D1 DE69114371 D1 DE 69114371D1 DE 69114371 T DE69114371 T DE 69114371T DE 69114371 T DE69114371 T DE 69114371T DE 69114371 D1 DE69114371 D1 DE 69114371D1
Authority
DE
Germany
Prior art keywords
vapor deposition
deposition
vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69114371T
Other languages
English (en)
Other versions
DE69114371T2 (de
Inventor
Toshimitsu Ohmine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69114371D1 publication Critical patent/DE69114371D1/de
Publication of DE69114371T2 publication Critical patent/DE69114371T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H01L21/205—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE69114371T 1990-06-25 1991-06-25 Verfahren zum Gasphasenabscheiden. Expired - Lifetime DE69114371T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16420990 1990-06-25

Publications (2)

Publication Number Publication Date
DE69114371D1 true DE69114371D1 (de) 1995-12-14
DE69114371T2 DE69114371T2 (de) 1996-04-04

Family

ID=15788739

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69114371T Expired - Lifetime DE69114371T2 (de) 1990-06-25 1991-06-25 Verfahren zum Gasphasenabscheiden.

Country Status (4)

Country Link
US (1) US5230925A (de)
EP (1) EP0463863B1 (de)
KR (1) KR950002177B1 (de)
DE (1) DE69114371T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05267186A (ja) * 1992-03-18 1993-10-15 Fujitsu Ltd 気相成長装置および該装置を用いた気相成長方法
US5569502A (en) * 1992-09-11 1996-10-29 Semiconductor Energy Laboratory Co., Ltd. Film formation apparatus and method for forming a film
US5747119A (en) * 1993-02-05 1998-05-05 Kabushiki Kaisha Toshiba Vapor deposition method and apparatus
US5420065A (en) * 1993-05-28 1995-05-30 Digital Equipment Corporation Process for filling an isolation trench
US6700550B2 (en) * 1997-01-16 2004-03-02 Ambit Corporation Optical antenna array for harmonic generation, mixing and signal amplification
DE19731018C2 (de) * 1997-07-18 1999-05-12 Fraunhofer Ges Forschung Dentalwerkzeug
US6584828B2 (en) 1999-12-17 2003-07-01 Atc, Inc. Method and apparatus of nondestructive testing a sealed product for leaks
KR100321178B1 (ko) * 1999-12-30 2002-03-18 박종섭 ＴａＯＮ박막을 갖는 커패시터 제조방법
US6569249B1 (en) 2000-04-18 2003-05-27 Clemson University Process for forming layers on substrates
EP1434898A1 (de) * 2001-10-12 2004-07-07 Unaxis Balzers Aktiengesellschaft Verfahren zur herstellung von bauelementen und ultrahochvakuum-cvd-reaktor
US20080163817A1 (en) * 2007-01-04 2008-07-10 Oc Oerlikon Balzers Ag Apparatus for gas handling in vacuum processes
FR2921938B1 (fr) * 2007-10-03 2011-04-29 Snecma Procede pour deposer un revetement d'aluminium sur une piece metallique creuse
JP2009138210A (ja) * 2007-12-04 2009-06-25 Sony Corp 成膜装置および成膜方法ならびに発光装置の製造方法
CN115418593B (zh) * 2022-08-12 2024-06-28 唐山钢铁集团高强汽车板有限公司 一种解决镀铝产线带钢表面漏镀的设备及方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3158499A (en) * 1961-07-07 1964-11-24 Union Carbide Corp Method of depositing metal coatings in holes, tubes, cracks, fissures and the like
GB1543860A (en) * 1976-10-23 1979-04-11 Hebel Gmbh & Co W Writing or drawing board
US4960640A (en) * 1988-02-19 1990-10-02 Refractory Composites, Inc. Composite refractory material
US5037775A (en) * 1988-11-30 1991-08-06 Mcnc Method for selectively depositing single elemental semiconductor material on substrates

Also Published As

Publication number Publication date
DE69114371T2 (de) 1996-04-04
US5230925A (en) 1993-07-27
EP0463863A1 (de) 1992-01-02
KR950002177B1 (ko) 1995-03-14
EP0463863B1 (de) 1995-11-08
KR920001630A (ko) 1992-01-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)