DE69008801D1 - Verfahren zur Herstellung eines Gegenstandes mit einem III-V-Halbleiterbauelement. - Google Patents

Verfahren zur Herstellung eines Gegenstandes mit einem III-V-Halbleiterbauelement.

Info

Publication number
DE69008801D1
DE69008801D1 DE69008801T DE69008801T DE69008801D1 DE 69008801 D1 DE69008801 D1 DE 69008801D1 DE 69008801 T DE69008801 T DE 69008801T DE 69008801 T DE69008801 T DE 69008801T DE 69008801 D1 DE69008801 D1 DE 69008801D1
Authority
DE
Germany
Prior art keywords
article
iii
producing
semiconductor component
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69008801T
Other languages
English (en)
Other versions
DE69008801T2 (de
Inventor
Naresh Chand
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
American Telephone and Telegraph Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone and Telegraph Co Inc filed Critical American Telephone and Telegraph Co Inc
Application granted granted Critical
Publication of DE69008801D1 publication Critical patent/DE69008801D1/de
Publication of DE69008801T2 publication Critical patent/DE69008801T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/024—Defect control-gettering and annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/097—Lattice strain and defects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/169—Vacuum deposition, e.g. including molecular beam epitaxy
DE69008801T 1989-08-24 1990-08-14 Verfahren zur Herstellung eines Gegenstandes mit einem III-V-Halbleiterbauelement. Expired - Fee Related DE69008801T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/398,115 US4977103A (en) 1989-08-24 1989-08-24 Method of making an article comprising a III/V semiconductor device

Publications (2)

Publication Number Publication Date
DE69008801D1 true DE69008801D1 (de) 1994-06-16
DE69008801T2 DE69008801T2 (de) 1994-10-27

Family

ID=23574042

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69008801T Expired - Fee Related DE69008801T2 (de) 1989-08-24 1990-08-14 Verfahren zur Herstellung eines Gegenstandes mit einem III-V-Halbleiterbauelement.

Country Status (4)

Country Link
US (1) US4977103A (de)
EP (1) EP0416764B1 (de)
JP (1) JPH071751B2 (de)
DE (1) DE69008801T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3469952B2 (ja) * 1994-11-15 2003-11-25 信越化学工業株式会社 高温高真空用容器及び治具の保管方法
US6391748B1 (en) 2000-10-03 2002-05-21 Texas Tech University Method of epitaxial growth of high quality nitride layers on silicon substrates
KR101431457B1 (ko) * 2012-04-09 2014-08-22 한국화학연구원 도가니 보호막 제조 방법
CN108707964A (zh) * 2018-04-13 2018-10-26 中国电子科技集团公司第十研究所 用于制备分子束外延束流源料锭的区熔坩埚及料锭

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3986822A (en) * 1975-02-27 1976-10-19 Union Carbide Corporation Boron nitride crucible
US4181544A (en) * 1976-12-30 1980-01-01 Bell Telephone Laboratories, Incorporated Molecular beam method for processing a plurality of substrates
US4426237A (en) * 1981-10-13 1984-01-17 International Business Machines Corporation Volatile metal oxide suppression in molecular beam epitaxy systems
EP0096980A1 (de) * 1982-06-16 1983-12-28 Borg-Warner Corporation Kraftübertragung mit stufenlos veränderbarem Übersetzungsverhältnis mit dauernd laufendem Riemen und mit hydrodynamischer Kupplung
JPS60251196A (ja) * 1984-05-25 1985-12-11 Fujitsu Ltd 分子線結晶成長方法
US4773852A (en) * 1985-06-11 1988-09-27 Denki Kagaku Kogyo Kabushiki Kaisha Pyrolytic boron nitride crucible and method for producing the same
EP0226931B1 (de) * 1985-12-17 1991-02-27 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Verfahren zur Herstellung von Halbleitersubstraten

Also Published As

Publication number Publication date
JPH0391236A (ja) 1991-04-16
EP0416764A2 (de) 1991-03-13
EP0416764A3 (en) 1991-05-22
JPH071751B2 (ja) 1995-01-11
DE69008801T2 (de) 1994-10-27
US4977103A (en) 1990-12-11
EP0416764B1 (de) 1994-05-11

Similar Documents

Publication Publication Date Title
DE69023976D1 (de) Verfahren zur Herstellung eines Halbleiterbauelementes mit einem T-Gate.
DE69023956D1 (de) Verfahren zur Herstellung eines III-V-Verbindungshalbleiterbauelementes.
DE3483444D1 (de) Verfahren zur herstellung eines halbleiterbauelementes.
DE69606478T2 (de) Verfahren zur herstellung eines halbleiterbauteils mit bicmos schaltkreis
DE3855861D1 (de) Verfahren zur Herstellung eines Halbleiterbauelementes mit einer isolierten Gitterstruktur
DE69435114D1 (de) Verfahren zur Herstellung eines Halbleiterbauelements
DE69304924D1 (de) Verfahren zur herstellung eines beschichteten schleifmittels mit einem leitenden träger.
DE69030365T2 (de) Verfahren zur Herstellung eines supraleitfähigen Mikrowellenbauelements
DE69002755D1 (de) Verfahren zur herstellung eines geloeteten gegenstandes.
DE3851125T2 (de) Verfahren zur Herstellung eines Halbleiterbauelementes mit Schaltungsmaterial gefüllter Rille.
DE69029430D1 (de) Verfahren zur Herstellung eines CMOS Halbleiterbauelements
DE69529942D1 (de) Verfahren zur Herstellung eines Halbleiterbauelements mit einem kapazitiven Element
DE69003238T2 (de) Verfahren zur herstellung einer mechanischen verbindung mit einem gegenstand.
DE69333099D1 (de) Verfahren zur Herstellung eines Halbleiter-Bauteils mit zylindrischer Elektrode
DE58903915D1 (de) Verfahren zur herstellung eines nahrungsmittels.
DE69415927T2 (de) Verfahren zur Herstellung eines Halbleiterbauelements mit einer Höckerelectrode
DE3870842D1 (de) Verfahren zur herstellung eines halbleiterbauelementes mit mindestens einem bipolaren heterouebergangstransistor.
DE69213778T2 (de) Verfahren zur Herstellung eines opto-elektronischen Bauteils
DE69008801T2 (de) Verfahren zur Herstellung eines Gegenstandes mit einem III-V-Halbleiterbauelement.
DE3868092D1 (de) Verfahren zur herstellung eines thermoplastischen harzes.
DE69000145D1 (de) Verfahren zur herstellung eines vinylidenfluoridcopolymers.
DE3866166D1 (de) Verfahren zur herstellung eines ethylenpolymers.
DE68929415T2 (de) Verfahren zur Herstellung eines BiCMOS-Halbleiterbauteils mit vergrabener Schicht
DE3785837T2 (de) Verfahren zur herstellung eines iii-v-halbleiterbauelementes.
DE69030743T2 (de) Verfahren zur Herstellung eines Halbleiterbauelements mit einem Kontaktteil

Legal Events

Date Code Title Description
8380 Miscellaneous part iii

Free format text: DER INHABER IST ZU AENDERN IN: AT & T CORP., NEW YORK, N.Y., US

8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN

8339 Ceased/non-payment of the annual fee