DE69007496D1 - Speicherzelle mit schreiblasttransistoren. - Google Patents

Speicherzelle mit schreiblasttransistoren.

Info

Publication number
DE69007496D1
DE69007496D1 DE90915693T DE69007496T DE69007496D1 DE 69007496 D1 DE69007496 D1 DE 69007496D1 DE 90915693 T DE90915693 T DE 90915693T DE 69007496 T DE69007496 T DE 69007496T DE 69007496 D1 DE69007496 D1 DE 69007496D1
Authority
DE
Germany
Prior art keywords
storage cell
load transistors
write load
write
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE90915693T
Other languages
English (en)
Other versions
DE69007496T2 (de
Inventor
John Edward Andersen
Robert Lloyd Barry
James Bisnett
Eric Fung
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE69007496D1 publication Critical patent/DE69007496D1/de
Application granted granted Critical
Publication of DE69007496T2 publication Critical patent/DE69007496T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/416—Read-write [R-W] circuits 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G11C11/4113—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only with at least one cell access to base or collector of at least one of said transistors, e.g. via access diodes, access transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
DE69007496T 1990-04-06 1990-10-05 Speicherzelle mit schreiblasttransistoren. Expired - Fee Related DE69007496T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/505,952 US5040145A (en) 1990-04-06 1990-04-06 Memory cell with active write load
PCT/US1990/005733 WO1991015855A1 (en) 1990-04-06 1990-10-05 Memory cell with active write load

Publications (2)

Publication Number Publication Date
DE69007496D1 true DE69007496D1 (de) 1994-04-21
DE69007496T2 DE69007496T2 (de) 1994-09-29

Family

ID=24012556

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69007496T Expired - Fee Related DE69007496T2 (de) 1990-04-06 1990-10-05 Speicherzelle mit schreiblasttransistoren.

Country Status (5)

Country Link
US (1) US5040145A (de)
EP (1) EP0523043B1 (de)
JP (1) JPH0713874B2 (de)
DE (1) DE69007496T2 (de)
WO (1) WO1991015855A1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4231178C2 (de) * 1992-09-17 1994-07-21 Siemens Ag Speicherelement

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3643235A (en) * 1968-12-30 1972-02-15 Ibm Monolithic semiconductor memory
DE2034889C3 (de) * 1968-12-30 1980-09-25 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte Speicherzelle
US3815106A (en) * 1972-05-11 1974-06-04 S Wiedmann Flip-flop memory cell arrangement
US3725879A (en) * 1970-11-16 1973-04-03 Ibm Functional memory cell
DE2165729C3 (de) * 1971-12-30 1975-02-13 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithische, als Lese/Schreiboder als Festwertspeicher betreibbare Speicheranordnung
SU491998A1 (ru) * 1974-05-28 1975-11-15 Предприятие П/Я Р-6644 Ячейка пам ти
DE2738678C3 (de) * 1977-08-27 1982-03-04 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte Speicherzelle
EP0005601B1 (de) * 1978-05-11 1983-03-02 Nippon Telegraph and Telephone Public Corporation Integrierte Halbleiterspeicherschaltung
JPS5842556B2 (ja) * 1979-08-30 1983-09-20 富士通株式会社 半導体記憶装置
US4387445A (en) * 1981-02-24 1983-06-07 International Business Machines Corporation Random access memory cell
DE3147951A1 (de) * 1981-12-03 1983-06-16 Siemens AG, 1000 Berlin und 8000 München Statische speicherzelle
US4575821A (en) * 1983-05-09 1986-03-11 Rockwell International Corporation Low power, high speed random access memory circuit
ATE58027T1 (de) * 1985-08-21 1990-11-15 Siemens Ag Bipolare speicherzelle mit externer kapazitaet.
EP0217307B1 (de) * 1985-09-30 1992-03-11 Honeywell Inc. Strahlungsfeste Speicherzelle
US4813017A (en) * 1985-10-28 1989-03-14 International Business Machines Corportion Semiconductor memory device and array
US4754430A (en) * 1986-12-18 1988-06-28 Honeywell Inc. Memory cell with dual collector, active load transistors
US4858181A (en) * 1987-07-07 1989-08-15 Texas Instruments Incorporated Fast recovery PNP loaded bipolar static RAM memory cell with an independent current path
US4922455A (en) * 1987-09-08 1990-05-01 International Business Machines Corporation Memory cell with active device for saturation capacitance discharge prior to writing

Also Published As

Publication number Publication date
EP0523043A1 (de) 1993-01-20
EP0523043B1 (de) 1994-03-16
JPH05504222A (ja) 1993-07-01
WO1991015855A1 (en) 1991-10-17
DE69007496T2 (de) 1994-09-29
US5040145A (en) 1991-08-13
JPH0713874B2 (ja) 1995-02-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee