DE69006809D1 - Vorrichtung für die Verdampfung und Bereitstellung von Organometallverbindungen. - Google Patents

Vorrichtung für die Verdampfung und Bereitstellung von Organometallverbindungen.

Info

Publication number
DE69006809D1
DE69006809D1 DE90117498T DE69006809T DE69006809D1 DE 69006809 D1 DE69006809 D1 DE 69006809D1 DE 90117498 T DE90117498 T DE 90117498T DE 69006809 T DE69006809 T DE 69006809T DE 69006809 D1 DE69006809 D1 DE 69006809D1
Authority
DE
Germany
Prior art keywords
provision
evaporation
organometallic compounds
organometallic
compounds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE90117498T
Other languages
English (en)
Other versions
DE69006809T2 (de
Inventor
Hiroshi Mihira
Tetsuo Shimizu
Kazuhiro Hirahara
Toshinobu Ishihara
Seiki Takaya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Stec KK
Original Assignee
Shin Etsu Chemical Co Ltd
Stec KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1234767A external-priority patent/JP2611009B2/ja
Priority claimed from JP1234766A external-priority patent/JP2611008B2/ja
Application filed by Shin Etsu Chemical Co Ltd, Stec KK filed Critical Shin Etsu Chemical Co Ltd
Application granted granted Critical
Publication of DE69006809D1 publication Critical patent/DE69006809D1/de
Publication of DE69006809T2 publication Critical patent/DE69006809T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE69006809T 1989-09-12 1990-09-11 Vorrichtung für die Verdampfung und Bereitstellung von Organometallverbindungen. Expired - Fee Related DE69006809T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1234767A JP2611009B2 (ja) 1989-09-12 1989-09-12 有機金属化合物の気化供給装置
JP1234766A JP2611008B2 (ja) 1989-09-12 1989-09-12 有機金属化合物の気化供給装置

Publications (2)

Publication Number Publication Date
DE69006809D1 true DE69006809D1 (de) 1994-03-31
DE69006809T2 DE69006809T2 (de) 1994-09-15

Family

ID=26531743

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69006809T Expired - Fee Related DE69006809T2 (de) 1989-09-12 1990-09-11 Vorrichtung für die Verdampfung und Bereitstellung von Organometallverbindungen.

Country Status (3)

Country Link
US (1) US5160542A (de)
EP (1) EP0419939B1 (de)
DE (1) DE69006809T2 (de)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2626925B2 (ja) * 1990-05-23 1997-07-02 三菱電機株式会社 基板処理装置および基板処理方法
US5308433A (en) * 1991-04-11 1994-05-03 Matsushita Electric Industrial Co., Ltd. Apparatus and method for vapor growth
US6004885A (en) 1991-12-26 1999-12-21 Canon Kabushiki Kaisha Thin film formation on semiconductor wafer
US5447568A (en) * 1991-12-26 1995-09-05 Canon Kabushiki Kaisha Chemical vapor deposition method and apparatus making use of liquid starting material
JP2797233B2 (ja) * 1992-07-01 1998-09-17 富士通株式会社 薄膜成長装置
JP2000252269A (ja) * 1992-09-21 2000-09-14 Mitsubishi Electric Corp 液体気化装置及び液体気化方法
JPH06196419A (ja) * 1992-12-24 1994-07-15 Canon Inc 化学気相堆積装置及びそれによる半導体装置の製造方法
JP2889098B2 (ja) * 1993-10-13 1999-05-10 株式会社本山製作所 特定ガスの供給制御装置
US5451258A (en) * 1994-05-11 1995-09-19 Materials Research Corporation Apparatus and method for improved delivery of vaporized reactant gases to a reaction chamber
US5614247A (en) * 1994-09-30 1997-03-25 International Business Machines Corporation Apparatus for chemical vapor deposition of aluminum oxide
US5648113A (en) * 1994-09-30 1997-07-15 International Business Machines Corporation Aluminum oxide LPCVD system
US5620524A (en) * 1995-02-27 1997-04-15 Fan; Chiko Apparatus for fluid delivery in chemical vapor deposition systems
US6039809A (en) * 1998-01-27 2000-03-21 Mitsubishi Materials Silicon Corporation Method and apparatus for feeding a gas for epitaxial growth
EP1073777A2 (de) 1998-04-14 2001-02-07 CVD Systems, Inc. Filmabscheidungssystem
US6136725A (en) * 1998-04-14 2000-10-24 Cvd Systems, Inc. Method for chemical vapor deposition of a material on a substrate
US6296711B1 (en) 1998-04-14 2001-10-02 Cvd Systems, Inc. Film processing system
US6217937B1 (en) 1998-07-15 2001-04-17 Cornell Research Foundation, Inc. High throughput OMVPE apparatus
JP3582437B2 (ja) * 1999-12-24 2004-10-27 株式会社村田製作所 薄膜製造方法及びそれに用いる薄膜製造装置
JP2002035572A (ja) * 2000-05-18 2002-02-05 Ulvac Japan Ltd 真空処理装置と多室型真空処理装置
US20040025787A1 (en) * 2002-04-19 2004-02-12 Selbrede Steven C. System for depositing a film onto a substrate using a low pressure gas precursor
JP3821227B2 (ja) * 2002-09-19 2006-09-13 信越化学工業株式会社 有機金属化合物の気化供給装置
TW200407328A (en) * 2002-09-19 2004-05-16 Shinetsu Chemical Co Liquid organometallic compound vaporizing/feeding system
US20050000428A1 (en) * 2003-05-16 2005-01-06 Shero Eric J. Method and apparatus for vaporizing and delivering reactant
JP2005079141A (ja) * 2003-08-28 2005-03-24 Asm Japan Kk プラズマｃｖｄ装置
CN102154628B (zh) * 2004-08-02 2014-05-07 维高仪器股份有限公司 用于化学气相沉积反应器的多气体分配喷射器
JP4689324B2 (ja) * 2005-04-04 2011-05-25 東京エレクトロン株式会社 成膜装置、成膜方法および記録媒体
JP4605790B2 (ja) 2006-06-27 2011-01-05 株式会社フジキン 原料の気化供給装置及びこれに用いる圧力自動調整装置。
JP4762835B2 (ja) * 2006-09-07 2011-08-31 東京エレクトロン株式会社 基板処理方法、基板処理装置、プログラムおよびプログラム記録媒体
US8741062B2 (en) * 2008-04-22 2014-06-03 Picosun Oy Apparatus and methods for deposition reactors
US20100266765A1 (en) * 2009-04-21 2010-10-21 White Carl L Method and apparatus for growing a thin film onto a substrate
US9117773B2 (en) * 2009-08-26 2015-08-25 Asm America, Inc. High concentration water pulses for atomic layer deposition
KR101084275B1 (ko) * 2009-09-22 2011-11-16 삼성모바일디스플레이주식회사 소스 가스 공급 유닛, 이를 구비하는 증착 장치 및 방법
WO2012071661A1 (en) * 2010-11-30 2012-06-07 Socpra Sciences Et Genie S.E.C. Epitaxial deposition apparatus, gas injectors, and chemical vapor management system associated therewith
US9454158B2 (en) 2013-03-15 2016-09-27 Bhushan Somani Real time diagnostics for flow controller systems and methods
CN103922257B (zh) * 2014-04-25 2016-05-04 安徽亚格盛电子新材料有限公司 直接充装mo源的装置
US10983538B2 (en) 2017-02-27 2021-04-20 Flow Devices And Systems Inc. Systems and methods for flow sensor back pressure adjustment for mass flow controller
US11939668B2 (en) * 2022-04-26 2024-03-26 Applied Materials, Inc. Gas delivery for tungsten-containing layer

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US787076A (en) * 1902-01-30 1905-04-11 Crane Co Valve.
GB787076A (en) * 1954-10-20 1957-12-04 Ohio Commw Eng Co Improvements in or relating to gas plating
US4066481A (en) * 1974-11-11 1978-01-03 Rockwell International Corporation Metalorganic chemical vapor deposition of IVA-IVA compounds and composite
JPS5211176A (en) * 1975-07-18 1977-01-27 Toshiba Corp Activation gas reaction apparatus
GB8428032D0 (en) * 1984-11-06 1984-12-12 Secr Defence Growth of crystalline layers
JPS61254242A (ja) * 1985-05-01 1986-11-12 Sumitomo Electric Ind Ltd 原料供給装置
EP0236308A1 (de) * 1985-09-16 1987-09-16 J.C. Schumacher Company Vakuumdampftransportkontrolle
US4844006A (en) * 1988-03-07 1989-07-04 Akzo America Inc. Apparatus to provide a vaporized reactant for chemical-vapor deposition
US4904337A (en) * 1988-06-06 1990-02-27 Raytheon Company Photo-enhanced pyrolytic MOCVD growth of group II-VI materials

Also Published As

Publication number Publication date
EP0419939A1 (de) 1991-04-03
DE69006809T2 (de) 1994-09-15
US5160542A (en) 1992-11-03
EP0419939B1 (de) 1994-02-23

Similar Documents

Publication Publication Date Title
DE69006809D1 (de) Vorrichtung für die Verdampfung und Bereitstellung von Organometallverbindungen.
DE69015905D1 (de) Vorrichtung zur Behandlung von Flüssigkeiten.
DE68918554D1 (de) Rotierende Vorrichtung für die Zerstäubung von Farbe.
DE69023843T2 (de) Automatisches Geschäftsverfahren und Vorrichtung.
DE69034092D1 (de) Vorrichtung zur Behandlung von Proben
DE3775597D1 (de) Vorrichtung zur behandlung von teilchenfoermigem material.
DE69029584T2 (de) Vorrichtung zur beschichtung von befestigungsmitteln
DE29580137U1 (de) Zweiteilige Vorrichtung für die Verabreichung von Arzneimitteln
DE3777602D1 (de) Formgebungsverfahren und vorrichtung dafuer.
DE69004192T4 (de) Induktive Vorrichtung.
DE3765257D1 (de) Vorrichtung zur zurschaustellung von gegenstaenden.
DE3877343T2 (de) Vorrichtung zur herstellung von metallpulver.
DE68907058T2 (de) Vorrichtung zur beschichtung.
DE68915496D1 (de) Vorrichtung zur Herstellung von Metallpulver.
DE68914228T2 (de) Vorrichtung für die Trennung von Flüssigkeiten.
DE69008945D1 (de) Gerät für die Anwendung von Supraleitfähigkeit.
DE69003608D1 (de) Vorrichtung zum granulieren und ueberziehen.
DE68910123D1 (de) Vorrichtung zur kühlung der kopfhaut.
DE68912027D1 (de) Vorrichtung zur Frequenzverdopplung.
AT359763B (de) Vorrichtung, insbesondere fuer die bearbeitung von rasenflaechen u.dgl.
DE3885460T2 (de) Vorrichtung zur behandlung von flüssigkeiten.
DE68912913D1 (de) Vorrichtung zur elektrolytischen Behandlung von metallischen Gegenständen.
DE69016485D1 (de) Vorrichtung zur getrennten Zugabe von Reagenzien.
DE59003441D1 (de) Schweissverfahren und Vorrichtung.
DE69015732T2 (de) Flüssigkristallzusammensetzung und dieselbe enthaltende Vorrichtung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee