DE68925266D1 - Korpuskularbestrahlungsverfahren mit einer Maske - Google Patents

Korpuskularbestrahlungsverfahren mit einer Maske

Info

Publication number
DE68925266D1
DE68925266D1 DE68925266T DE68925266T DE68925266D1 DE 68925266 D1 DE68925266 D1 DE 68925266D1 DE 68925266 T DE68925266 T DE 68925266T DE 68925266 T DE68925266 T DE 68925266T DE 68925266 D1 DE68925266 D1 DE 68925266D1
Authority
DE
Germany
Prior art keywords
mask
corpuscular radiation
radiation procedure
procedure
corpuscular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68925266T
Other languages
English (en)
Other versions
DE68925266T2 (de
Inventor
Kiichi Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=17613316&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE68925266(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE68925266D1 publication Critical patent/DE68925266D1/de
Application granted granted Critical
Publication of DE68925266T2 publication Critical patent/DE68925266T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE68925266T 1988-11-04 1989-10-27 Korpuskularbestrahlungsverfahren mit einer Maske Expired - Fee Related DE68925266T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63279605A JP2702183B2 (ja) 1988-11-04 1988-11-04 半導体製造装置

Publications (2)

Publication Number Publication Date
DE68925266D1 true DE68925266D1 (de) 1996-02-08
DE68925266T2 DE68925266T2 (de) 1996-05-15

Family

ID=17613316

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68925266T Expired - Fee Related DE68925266T2 (de) 1988-11-04 1989-10-27 Korpuskularbestrahlungsverfahren mit einer Maske

Country Status (5)

Country Link
US (1) US5393988A (de)
EP (1) EP0367126B1 (de)
JP (1) JP2702183B2 (de)
KR (1) KR940006209B1 (de)
DE (1) DE68925266T2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0431864B1 (de) * 1989-12-04 1998-04-29 Fujitsu Limited Verfahren zur Wahrnehmung und Justierung der Belichtungsbedingungen in einem Belichtungssystem mittels Ladungsträgern und ein solches System
JP3245882B2 (ja) * 1990-10-24 2002-01-15 株式会社日立製作所 パターン形成方法、および投影露光装置
JP2616676B2 (ja) * 1993-11-30 1997-06-04 日本電気株式会社 半導体装置の製造方法
JPH09293472A (ja) * 1996-04-26 1997-11-11 Fujitsu Ltd 荷電粒子ビーム露光装置、その露光方法及びその製造方法
US5808892A (en) * 1996-11-05 1998-09-15 Taiwan Semiconductor Manufacturing Company Ltd. Line edge and size definition in e-beam exposure
JPH10321502A (ja) * 1997-05-16 1998-12-04 Nikon Corp 荷電粒子線投影方法
US6180289B1 (en) 1997-07-23 2001-01-30 Nikon Corporation Projection-microlithography mask with separate mask substrates
US6040892A (en) 1997-08-19 2000-03-21 Micron Technology, Inc. Multiple image reticle for forming layers
JPH11142121A (ja) 1997-11-11 1999-05-28 Nikon Corp レチクルの歪み計測方法および歪み計測装置
US6128067A (en) * 1998-04-28 2000-10-03 Kabushiki Kaisha Toshiba Correcting method and correcting system for mask pattern
JP2000089448A (ja) * 1998-09-11 2000-03-31 Fujitsu Ltd 露光用パターン表示・検査・修正方法
JP2000277425A (ja) 1999-03-26 2000-10-06 Nec Corp 電子線描画方法とその装置
JP3360666B2 (ja) * 1999-11-12 2002-12-24 日本電気株式会社 描画パターン検証方法
US7623250B2 (en) * 2005-02-04 2009-11-24 Stryker Leibinger Gmbh & Co. Kg. Enhanced shape characterization device and method
KR20110101904A (ko) * 2010-03-10 2011-09-16 삼성모바일디스플레이주식회사 이온 도핑 장치 및 도핑 방법
KR101456794B1 (ko) * 2013-08-08 2014-11-03 (주)오로스 테크놀로지 빔 스폿 조절이 가능한 주사전자현미경 및 이를 이용한 측정방법
US10495982B2 (en) * 2013-10-28 2019-12-03 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for real-time overlay error reduction

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52119185A (en) * 1976-03-31 1977-10-06 Fujitsu Ltd Electron beam exposure equipment
DE2837590A1 (de) * 1978-08-29 1980-03-13 Ibm Deutschland Verfahren zur schattenwurfbelichtung
US4213053A (en) * 1978-11-13 1980-07-15 International Business Machines Corporation Electron beam system with character projection capability
DE2939044A1 (de) * 1979-09-27 1981-04-09 Ibm Deutschland Gmbh, 7000 Stuttgart Einrichtung fuer elektronenstrahllithographie
JPS5731134A (en) * 1980-08-01 1982-02-19 Hitachi Ltd Drawing device by electron beam
JPS5968928A (ja) * 1982-10-13 1984-04-19 Pioneer Electronic Corp 半導体装置の製造方法
JPS62202518A (ja) * 1986-02-03 1987-09-07 Fujitsu Ltd Ｘ線露光用マスク
JPS62260322A (ja) * 1986-05-06 1987-11-12 Hitachi Ltd 可変成形型電子線描画装置
AT391772B (de) * 1986-05-16 1990-11-26 Ims Ionen Mikrofab Syst Anordnung zum positionieren der abbildung der struktur einer maske auf ein substrat
JPH0789534B2 (ja) * 1986-07-04 1995-09-27 キヤノン株式会社 露光方法
US4812661A (en) * 1986-08-20 1989-03-14 Hewlett-Packard Company Method and apparatus for hybrid I.C. lithography
JPH0673344B2 (ja) * 1987-04-08 1994-09-14 株式会社日立製作所 電子線描画方法
JPH01243422A (ja) * 1988-03-25 1989-09-28 Hitachi Ltd 任意図形露光方法
US4849313A (en) * 1988-04-28 1989-07-18 Vlsi Technology, Inc. Method for making a reticle mask

Also Published As

Publication number Publication date
KR900008614A (ko) 1990-06-04
EP0367126A3 (de) 1991-06-12
EP0367126A2 (de) 1990-05-09
EP0367126B1 (de) 1995-12-27
US5393988A (en) 1995-02-28
JPH02125609A (ja) 1990-05-14
KR940006209B1 (ko) 1994-07-11
DE68925266T2 (de) 1996-05-15
JP2702183B2 (ja) 1998-01-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee