DE68925160D1 - Ladungspumpenschaltung mit Induktivität und Kapazität zum Treiben von Leistungs-MOS-Transistorbrücken - Google Patents

Ladungspumpenschaltung mit Induktivität und Kapazität zum Treiben von Leistungs-MOS-Transistorbrücken

Info

Publication number
DE68925160D1
DE68925160D1 DE68925160T DE68925160T DE68925160D1 DE 68925160 D1 DE68925160 D1 DE 68925160D1 DE 68925160 T DE68925160 T DE 68925160T DE 68925160 T DE68925160 T DE 68925160T DE 68925160 D1 DE68925160 D1 DE 68925160D1
Authority
DE
Germany
Prior art keywords
inductance
capacitance
mos transistor
charge pump
driving power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68925160T
Other languages
English (en)
Other versions
DE68925160T2 (de
Inventor
Domenico Rossi
Claudio Diazzi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
SGS Thomson Microelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SRL filed Critical SGS Thomson Microelectronics SRL
Publication of DE68925160D1 publication Critical patent/DE68925160D1/de
Application granted granted Critical
Publication of DE68925160T2 publication Critical patent/DE68925160T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0826—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in bipolar transistor switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/538—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a push-pull configuration
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)
  • Electromagnetic Pumps, Or The Like (AREA)
DE68925160T 1988-07-22 1989-06-08 Ladungspumpenschaltung mit Induktivität und Kapazität zum Treiben von Leistungs-MOS-Transistorbrücken Expired - Fee Related DE68925160T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8821450A IT1227430B (it) 1988-07-22 1988-07-22 Circuito a pompa di carica a induttanza e capacita' per il pilotaggio di ponti a transistori mos di potenza.

Publications (2)

Publication Number Publication Date
DE68925160D1 true DE68925160D1 (de) 1996-02-01
DE68925160T2 DE68925160T2 (de) 1996-08-29

Family

ID=11181961

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68925160T Expired - Fee Related DE68925160T2 (de) 1988-07-22 1989-06-08 Ladungspumpenschaltung mit Induktivität und Kapazität zum Treiben von Leistungs-MOS-Transistorbrücken

Country Status (5)

Country Link
US (2) US4980576A (de)
EP (1) EP0351898B1 (de)
JP (1) JP2525247B2 (de)
DE (1) DE68925160T2 (de)
IT (1) IT1227430B (de)

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JPH04348612A (ja) * 1991-05-27 1992-12-03 Toyota Autom Loom Works Ltd 昇圧電源回路
JPH07505014A (ja) * 1992-03-10 1995-06-01 アナログ・ディバイセス・インコーポレーテッド トランジスタの飽和を制御する回路構造
EP0559996B1 (de) * 1992-03-12 1997-09-10 STMicroelectronics S.r.l. Treiber, insbesondere für Leistungs-MOS-Halbbrücken
US5717557A (en) * 1992-08-20 1998-02-10 Texas Instruments Incorporated Low side line driver
US6407594B1 (en) 1993-04-09 2002-06-18 Sgs-Thomson Microelectronics S.R.L. Zero bias current driver control circuit
US5373435A (en) * 1993-05-07 1994-12-13 Philips Electronics North America Corporation High voltage integrated circuit driver for half-bridge circuit employing a bootstrap diode emulator
DE4338083C1 (de) * 1993-11-08 1995-06-08 Gruendl & Hoffmann Treiberschaltung
US5559423A (en) * 1994-03-31 1996-09-24 Norhtern Telecom Limited Voltage regulator including a linear transconductance amplifier
FR2719135B1 (fr) * 1994-04-21 1996-06-28 Sgs Thomson Microelectronics Circuit de limitation de tension avec comparateur à hystérésis.
US5491445A (en) * 1994-07-05 1996-02-13 Delco Electronics Corporation Booster power converter having accelerated transient boost response
US5694074A (en) * 1994-10-31 1997-12-02 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit being able to generate sufficient boost potential disregarding generation of noise
US5796276A (en) * 1994-12-30 1998-08-18 Sgs-Thomson Microelectronics, Inc. High-side-driver gate drive circuit
EP0725481B1 (de) * 1995-01-31 2003-01-08 STMicroelectronics S.r.l. Treiberschaltung mit Ladungspumpe für einen Leistungstransistor
DE19534603C1 (de) * 1995-09-18 1997-05-22 Siemens Ag Schaltungsanordnung zum Erkennen des Leerlaufs einer Last
US5705948A (en) * 1996-04-01 1998-01-06 Delco Electronics Corporation Self clocking, variable frequency boost circuit
DE19702136A1 (de) * 1997-01-22 1998-07-23 Rohde & Schwarz Elektronischer Leistungsschalter
US5903173A (en) * 1997-05-12 1999-05-11 Caterpillar Inc. Low side driver circuit with diagnostic output
DE19953884A1 (de) * 1999-11-09 2001-05-23 Infineon Technologies Ag Schaltungsanordnung zur Erzeugung von Signalformen
US6696882B1 (en) * 2000-06-22 2004-02-24 Artesyn Technologies, Inc. Transient override circuit for a voltage regulator circuit
CN100337171C (zh) * 2002-05-16 2007-09-12 广达电脑股份有限公司 双频脉波宽度调制稳压装置
US6566847B1 (en) * 2002-07-29 2003-05-20 Taiwan Semiconductor Manufacturing Company Low power charge pump regulating circuit
FR2843247B1 (fr) * 2002-07-30 2004-11-19 Inst Nat Polytech Grenoble Dispositif d'alimentation d'un element de commande d'un composant electronique de puissance actif.
US7151328B2 (en) * 2003-03-24 2006-12-19 Siemens Aktiengesellschaft Auxiliary power source and method for operating the auxiliary power source, as well as circuit arrangement for switching a load
TW200713733A (en) * 2005-09-14 2007-04-01 Richtek Techohnology Corp Protecting device and method for protecting power supply system
US8139329B2 (en) * 2007-08-03 2012-03-20 Linear Technology Corporation Over-voltage protection circuit
JP6015370B2 (ja) * 2012-11-12 2016-10-26 株式会社デンソー スイッチング電源装置
US9660516B2 (en) * 2014-12-10 2017-05-23 Monolithic Power Systems, Inc. Switching controller with reduced inductor peak-to-peak ripple current variation
US10164614B2 (en) 2016-03-31 2018-12-25 Analog Devices Global Unlimited Company Tank circuit and frequency hopping for isolators

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE399495B (sv) * 1975-11-03 1978-02-13 Lindmark Magnus C W Switchande stromforsorjningsaggregat for omvandling av likspenning till vexelspenning
US4312029A (en) * 1979-06-22 1982-01-19 Gte Automatic Electric Laboratories, Inc. DC-to-DC Converter with reduced power loss during turn off
US4348598A (en) * 1980-01-25 1982-09-07 Steve Smith Power-pulse switching circuit
US4428016A (en) * 1980-12-02 1984-01-24 The Boeing Company Overload protected switching regulator
JPS58207870A (ja) * 1982-05-26 1983-12-03 Nec Corp 倍電圧整流チヨツパ回路
JPS5910166A (ja) * 1982-07-08 1984-01-19 Nec Corp ３倍電圧昇圧回路
JPS6032570A (ja) * 1983-08-01 1985-02-19 Sanyo Electric Co Ltd チヨツパ−インバ−タの制御装置
JPS6051784U (ja) * 1983-09-16 1985-04-11 クラリオン株式会社 負出力電源回路
JPS60125167A (ja) * 1983-12-08 1985-07-04 Nec Corp 昇圧形電源回路
JPS60166284U (ja) * 1984-04-13 1985-11-05 ソニー株式会社 スイツチング式電源回路
US4751403A (en) * 1984-06-15 1988-06-14 Hitachi, Ltd. Transistor driving circuit and circuit controlling method
EP0201878A3 (de) * 1985-05-10 1987-04-15 Siemens Aktiengesellschaft Schaltungsanordnung mit einem p-schaltenden n-Kanal MOS-Transistor
EP0271959A3 (de) * 1986-12-19 1989-10-18 Philips Electronics Uk Limited Hochspannungs-Leistungstransistorschaltungen

Also Published As

Publication number Publication date
JPH0279770A (ja) 1990-03-20
US4980576A (en) 1990-12-25
EP0351898B1 (de) 1995-12-20
IT8821450A0 (it) 1988-07-22
DE68925160T2 (de) 1996-08-29
USRE35041E (en) 1995-09-26
IT1227430B (it) 1991-04-11
EP0351898A3 (de) 1991-03-27
EP0351898A2 (de) 1990-01-24
JP2525247B2 (ja) 1996-08-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee