DE68924630D1 - Hochfrequenz-Substrat-Material für Dünnschichtlagen perovskitischer Supraleiter. - Google Patents

Hochfrequenz-Substrat-Material für Dünnschichtlagen perovskitischer Supraleiter.

Info

Publication number
DE68924630D1
DE68924630D1 DE68924630T DE68924630T DE68924630D1 DE 68924630 D1 DE68924630 D1 DE 68924630D1 DE 68924630 T DE68924630 T DE 68924630T DE 68924630 T DE68924630 T DE 68924630T DE 68924630 D1 DE68924630 D1 DE 68924630D1
Authority
DE
Germany
Prior art keywords
thin
substrate material
film layers
frequency substrate
perovskite superconductors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68924630T
Other languages
English (en)
Other versions
DE68924630T2 (de
Inventor
Randy Wayne Simon
Christine Elizabeth Platt
Alfred Euinam Lee
Gregory Steven Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Northrop Grumman Corp
Original Assignee
TRW Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TRW Inc filed Critical TRW Inc
Application granted granted Critical
Publication of DE68924630D1 publication Critical patent/DE68924630D1/de
Publication of DE68924630T2 publication Critical patent/DE68924630T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
    • H01P11/001—Manufacturing waveguides or transmission lines of the waveguide type
    • H01P11/003—Manufacturing lines with conductors on a substrate, e.g. strip lines, slot lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/003—Coplanar lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
    • H01P3/08—Microstrips; Strip lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
    • H01P3/08—Microstrips; Strip lines
    • H01P3/081—Microstriplines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0604—Monocrystalline substrates, e.g. epitaxial growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/12—Josephson-effect devices
    • H10N60/124—Josephson-effect devices comprising high-Tc ceramic materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9265—Special properties
    • Y10S428/93—Electric superconducting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y10S505/702—Josephson junction present
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y10S505/703—Microelectronic device with superconducting conduction line
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/704—Wire, fiber, or cable
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/825—Apparatus per se, device per se, or process of making or operating same
    • Y10S505/856—Electrical transmission or interconnection system
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/825—Apparatus per se, device per se, or process of making or operating same
    • Y10S505/866—Wave transmission line, network, waveguide, or microwave storage device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
DE68924630T 1988-08-18 1989-08-17 Hochfrequenz-Substrat-Material für Dünnschichtlagen perovskitischer Supraleiter. Expired - Fee Related DE68924630T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/233,637 US5523282A (en) 1988-08-18 1988-08-18 High-frequency substrate material for thin-film layered perovskite superconductors

Publications (2)

Publication Number Publication Date
DE68924630D1 true DE68924630D1 (de) 1995-11-30
DE68924630T2 DE68924630T2 (de) 1996-04-04

Family

ID=22878080

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68924630T Expired - Fee Related DE68924630T2 (de) 1988-08-18 1989-08-17 Hochfrequenz-Substrat-Material für Dünnschichtlagen perovskitischer Supraleiter.

Country Status (4)

Country Link
US (10) US5523282A (de)
EP (1) EP0359411B1 (de)
JP (1) JP2664491B2 (de)
DE (1) DE68924630T2 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5523282A (en) * 1988-08-18 1996-06-04 Trw Inc. High-frequency substrate material for thin-film layered perovskite superconductors
US4996187A (en) * 1988-10-17 1991-02-26 Allied-Signal Inc. Epitaxial Ba-Y-Cu-O superconductor film
JPH0824200B2 (ja) * 1988-11-18 1996-03-06 日本電信電話株式会社 トンネル接合素子
JPH0319382A (ja) * 1989-06-16 1991-01-28 Nippon Telegr & Teleph Corp <Ntt> トンネル接合形ジョセフソン素子
KR920009653B1 (ko) * 1990-07-12 1992-10-22 재단법인 한국전자통신연구소 란탄늄 알루미네이트 박막의 제조방법
US5439877A (en) * 1990-12-07 1995-08-08 E. I. Du Pont De Nemours And Company Process for depositing high temperature superconducting oxide thin films
EP0560941B1 (de) * 1990-12-07 1996-10-16 E.I. Du Pont De Nemours And Company Verfahren zum aufbringen von hochtemperatur-supraleitenden oxiddünnschichten
JPH08255938A (ja) * 1995-01-05 1996-10-01 Toshiba Corp 超電導配線と半導体装置
US6610633B1 (en) * 1995-05-04 2003-08-26 Trw Inc. Superconductor device
US5841342A (en) * 1995-10-13 1998-11-24 Com Dev Ltd. Voltage controlled superconducting microwave switch and method of operation thereof
AU3580897A (en) * 1996-06-28 1998-01-21 Superconducting Core Technologies, Inc. Near resonant cavity tuning devices
US5892243A (en) * 1996-12-06 1999-04-06 Trw Inc. High-temperature SSNS and SNS Josephson junction and method of making junction
US6004688A (en) * 1997-07-16 1999-12-21 The Board Of Regents Of The University Of Texas System Solid oxide fuel cell and doped perovskite lanthanum gallate electrolyte therefor
US6383675B1 (en) 1999-04-20 2002-05-07 Zinc Air Power Corporation Lanthanum nickel compound/metal mixture as a third electrode in a metal-air battery
KR100335494B1 (ko) * 1999-10-30 2002-05-08 윤종용 Ｂｓｔ 유전막에 구리를 함유한 커패시터 및 그 제조방법
SE9904263L (sv) * 1999-11-23 2001-05-24 Ericsson Telefon Ab L M Supraledande substratstruktur och ett förfarande för att producera en sådan struktur
US6839521B2 (en) 2001-05-10 2005-01-04 Northrop Grumman Corporation Photonic bipolar modem for secure multi-channel communication
US6734454B2 (en) 2001-08-27 2004-05-11 The Regents Of The University Of California Internally shunted Josephson junction device
US6593212B1 (en) * 2001-10-29 2003-07-15 The United States Of America As Represented By The Secretary Of The Navy Method for making electro-optical devices using a hydrogenion splitting technique
US6735073B2 (en) * 2002-01-09 2004-05-11 Lucent Technologies Inc. Electronic devices based on density wave dielectrics
US7700006B2 (en) * 2002-05-31 2010-04-20 Alcatel-Lucent Usa Inc. Voltage regulators
US6724056B1 (en) 2003-04-15 2004-04-20 Lucent Technologies Inc. Field-effect transistors with high-sensitivity gates
KR100717960B1 (ko) 2004-07-12 2007-05-14 전자부품연구원 초전도 전극을 이용한 나노스토리지 강유전체 매체구조 및그 제조방법
RU185571U1 (ru) * 2017-08-03 2018-12-11 федеральное государственное бюджетное образовательное учреждение высшего образования "Ульяновский государственный университет" Устройство для замедления поверхностных электромагнитных волн терагерцового диапазона на основе тонкой сверхпроводящей пленки
US10672971B2 (en) 2018-03-23 2020-06-02 International Business Machines Corporation Vertical transmon qubit device with microstrip waveguides
US10256392B1 (en) 2018-03-23 2019-04-09 International Business Machines Corporation Vertical transmon qubit device
US10243132B1 (en) 2018-03-23 2019-03-26 International Business Machines Corporation Vertical josephson junction superconducting device
CN109541322B (zh) * 2018-12-13 2020-11-06 北京工业大学 一种高温宽频微波材料复介电常数测量夹具装置

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US4227096A (en) * 1978-08-31 1980-10-07 Nasa Microwave integrated circuit for Josephson voltage standards
US4421785A (en) * 1980-08-18 1983-12-20 Sperry Corporation Superconductive tunnel junction device and method of manufacture
US4441088A (en) * 1981-12-31 1984-04-03 International Business Machines Corporation Stripline cable with reduced crosstalk
US6638894B1 (en) * 1987-01-09 2003-10-28 Lucent Technologies Inc. Devices and systems based on novel superconducting material
KR910002311B1 (ko) * 1987-02-27 1991-04-11 가부시기가이샤 히다찌세이사꾸쇼 초전도 디바이스
JPS6417314A (en) * 1987-07-10 1989-01-20 Matsushita Electric Ind Co Ltd Thin film superconductor
US4851794A (en) * 1987-10-09 1989-07-25 Ball Corporation Microstrip to coplanar waveguide transitional device
US5256635A (en) * 1988-01-15 1993-10-26 University Of Arkansas High temperature superconductor system comprising Tl2 Ba2 CuO+δ
US4962087A (en) * 1988-03-04 1990-10-09 Litton Systems, Inc. Epitaxial superconducting scructure on lattice matched lanthanum orthogallate
US4962086A (en) * 1988-06-08 1990-10-09 International Business Machines Corporation High Tc superconductor - gallate crystal structures
US5030613A (en) * 1988-08-15 1991-07-09 Allied-Signal Inc. Epitaxial Ba--Y--Cu--O ceramic superconductor film on perovskite structure substrate
US5523282A (en) * 1988-08-18 1996-06-04 Trw Inc. High-frequency substrate material for thin-film layered perovskite superconductors
US5024894A (en) * 1988-11-02 1991-06-18 Academy Of Applied Science Method of producing silicon and similar wafers buffered for the deposition of metal oxide superconducting (MOS) polymer composites and the like by insulating metal oxides (IMO) suitable as substrates for MOS, and novel buffered wafers provided thereby
US5164359A (en) * 1990-04-20 1992-11-17 Eaton Corporation Monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate

Also Published As

Publication number Publication date
EP0359411B1 (de) 1995-10-25
US6117824A (en) 2000-09-12
US6324413B1 (en) 2001-11-27
JP2664491B2 (ja) 1997-10-15
US6337149B1 (en) 2002-01-08
US5554585A (en) 1996-09-10
DE68924630T2 (de) 1996-04-04
JPH0291982A (ja) 1990-03-30
US6326334B1 (en) 2001-12-04
US5523282A (en) 1996-06-04
EP0359411A2 (de) 1990-03-21
US5523283A (en) 1996-06-04
US6297200B1 (en) 2001-10-02
EP0359411A3 (en) 1990-03-28
US5849673A (en) 1998-12-15
US5906963A (en) 1999-05-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NORTHROP GRUMMAN CORP. (N.D.GES.D.STAATES DELAWARE

8339 Ceased/non-payment of the annual fee