DE68923179D1 - Verfahren zur herstellung eines dünnen films von supraleiteroxyd und basis zur verwendung dazu. - Google Patents

Verfahren zur herstellung eines dünnen films von supraleiteroxyd und basis zur verwendung dazu.

Info

Publication number
DE68923179D1
DE68923179D1 DE68923179T DE68923179T DE68923179D1 DE 68923179 D1 DE68923179 D1 DE 68923179D1 DE 68923179 T DE68923179 T DE 68923179T DE 68923179 T DE68923179 T DE 68923179T DE 68923179 D1 DE68923179 D1 DE 68923179D1
Authority
DE
Germany
Prior art keywords
supraleiteroxyd
producing
base
thin film
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68923179T
Other languages
English (en)
Other versions
DE68923179T2 (de
Inventor
Kozo Technical Instit Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Komatsu Ltd
Original Assignee
Komatsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Ltd filed Critical Komatsu Ltd
Publication of DE68923179D1 publication Critical patent/DE68923179D1/de
Application granted granted Critical
Publication of DE68923179T2 publication Critical patent/DE68923179T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0604—Monocrystalline substrates, e.g. epitaxial growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
DE68923179T 1988-12-23 1989-12-25 Verfahren zur herstellung eines dünnen films von supraleiteroxyd und basis zur verwendung dazu. Expired - Fee Related DE68923179T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63323739A JP2530492B2 (ja) 1988-12-23 1988-12-23 酸化物超伝導薄膜の作製方法及びそれに用いる基板
PCT/JP1989/001299 WO1990007591A1 (en) 1988-12-23 1989-12-25 Method for preparing thin film of oxide superconductor and base used in the preparation

Publications (2)

Publication Number Publication Date
DE68923179D1 true DE68923179D1 (de) 1995-07-27
DE68923179T2 DE68923179T2 (de) 1996-02-29

Family

ID=18158074

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68923179T Expired - Fee Related DE68923179T2 (de) 1988-12-23 1989-12-25 Verfahren zur herstellung eines dünnen films von supraleiteroxyd und basis zur verwendung dazu.

Country Status (5)

Country Link
US (1) US5413986A (de)
EP (1) EP0450074B1 (de)
JP (1) JP2530492B2 (de)
DE (1) DE68923179T2 (de)
WO (1) WO1990007591A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991016477A1 (en) * 1990-04-17 1991-10-31 Kabushiki Kaisha Komatsu Seisakusho Process for producing single crystal of oxide
US6015986A (en) * 1995-12-22 2000-01-18 Micron Technology, Inc. Rugged metal electrodes for metal-insulator-metal capacitors
JP4452805B2 (ja) * 2004-09-21 2010-04-21 独立行政法人産業技術総合研究所 ビスマス系酸化物超電導薄膜及びその作製法
US7981840B2 (en) * 2005-03-02 2011-07-19 National Institute Of Advanced Industrial Science And Technology Method of manufacturing Bi-based oxide superconductor thin films

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50134200A (de) * 1974-04-15 1975-10-24
JPS63260896A (ja) * 1987-04-17 1988-10-27 Chichibu Cement Co Ltd 薄膜超電導体用基板材料
US4996187A (en) * 1988-10-17 1991-02-26 Allied-Signal Inc. Epitaxial Ba-Y-Cu-O superconductor film
JPH02267119A (ja) * 1989-04-07 1990-10-31 Seiko Epson Corp 酸化物超伝導薄膜
JPH042697A (ja) * 1990-04-17 1992-01-07 Komatsu Ltd 酸化物単結晶基板およびこれを用いた超伝導体装置およびその製造方法
US5173474A (en) * 1990-04-18 1992-12-22 Xerox Corporation Silicon substrate having an epitaxial superconducting layer thereon and method of making same

Also Published As

Publication number Publication date
EP0450074B1 (de) 1995-06-21
EP0450074A4 (en) 1992-08-19
JP2530492B2 (ja) 1996-09-04
EP0450074A1 (de) 1991-10-09
DE68923179T2 (de) 1996-02-29
US5413986A (en) 1995-05-09
WO1990007591A1 (en) 1990-07-12
JPH02172893A (ja) 1990-07-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee