DE68916457T2 - Einrichtung zur Molekularstrahlepitaxie. - Google Patents

Einrichtung zur Molekularstrahlepitaxie.

Info

Publication number
DE68916457T2
DE68916457T2 DE68916457T DE68916457T DE68916457T2 DE 68916457 T2 DE68916457 T2 DE 68916457T2 DE 68916457 T DE68916457 T DE 68916457T DE 68916457 T DE68916457 T DE 68916457T DE 68916457 T2 DE68916457 T2 DE 68916457T2
Authority
DE
Germany
Prior art keywords
transfer
substrate
holder
chamber
tray
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68916457T
Other languages
German (de)
English (en)
Other versions
DE68916457D1 (de
Inventor
Yuhji Ishida
Masato Mushiage
Haruo Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1988042830U external-priority patent/JPH0527501Y2/ja
Priority claimed from JP63077798A external-priority patent/JPH01249692A/ja
Priority claimed from JP63087918A external-priority patent/JPH01261296A/ja
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of DE68916457D1 publication Critical patent/DE68916457D1/de
Application granted granted Critical
Publication of DE68916457T2 publication Critical patent/DE68916457T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H10P10/00—
    • H10P72/3306—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • H10P72/0421—
    • H10P72/0441—
    • H10P72/3308—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE68916457T 1988-03-30 1989-03-23 Einrichtung zur Molekularstrahlepitaxie. Expired - Fee Related DE68916457T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP1988042830U JPH0527501Y2 (cg-RX-API-DMAC10.html) 1988-03-30 1988-03-30
JP63077798A JPH01249692A (ja) 1988-03-30 1988-03-30 分子線エピタキシー装置
JP63087918A JPH01261296A (ja) 1988-04-08 1988-04-08 分子線エピタキシー装置

Publications (2)

Publication Number Publication Date
DE68916457D1 DE68916457D1 (de) 1994-08-04
DE68916457T2 true DE68916457T2 (de) 1995-02-09

Family

ID=27291358

Family Applications (2)

Application Number Title Priority Date Filing Date
DE68916457T Expired - Fee Related DE68916457T2 (de) 1988-03-30 1989-03-23 Einrichtung zur Molekularstrahlepitaxie.
DE68926577T Expired - Fee Related DE68926577T2 (de) 1988-03-30 1989-03-23 Einrichtung zur Molekularstrahlepitaxie

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE68926577T Expired - Fee Related DE68926577T2 (de) 1988-03-30 1989-03-23 Einrichtung zur Molekularstrahlepitaxie

Country Status (6)

Country Link
US (1) US4944246A (cg-RX-API-DMAC10.html)
EP (2) EP0529687B1 (cg-RX-API-DMAC10.html)
KR (2) KR930010750B1 (cg-RX-API-DMAC10.html)
CA (1) CA1333038C (cg-RX-API-DMAC10.html)
DE (2) DE68916457T2 (cg-RX-API-DMAC10.html)
TW (1) TW202485B (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10261362A1 (de) * 2002-12-30 2004-07-15 Osram Opto Semiconductors Gmbh Substrat-Halter

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2678775B1 (fr) * 1991-07-05 1997-02-28 Thomson Csf Procede de realisation d'un dispositif optoelectronique
US5379719A (en) * 1993-07-26 1995-01-10 Sandia National Laboratories Method of deposition by molecular beam epitaxy
GB9405442D0 (en) * 1994-03-19 1994-05-04 Applied Vision Ltd Apparatus for coating substrates
GB0008286D0 (en) * 2000-04-04 2000-05-24 Applied Materials Inc A vaporiser for generating feed gas for an arc chamber
US7622322B2 (en) * 2001-03-23 2009-11-24 Cornell Research Foundation, Inc. Method of forming an AlN coated heterojunction field effect transistor
US7767480B1 (en) * 2004-02-26 2010-08-03 Opticomp Corporation Method for semiconductor compositional grading to realize low-resistance, distributed Bragg reflectors
DE212007000078U1 (de) 2006-10-31 2009-06-25 "Nauchnoe I Tekhnologicheskoe Oborudovanie" Limited Züchtungsmanipulator
DE212007000083U1 (de) 2006-10-31 2009-07-16 "Nauchnoe I Tekhnologicheskoe Oborudovanie" Limited Züchtungsmanipulator
US20100282167A1 (en) * 2008-12-18 2010-11-11 Veeco Instruments Inc. Linear Deposition Source
US20100159132A1 (en) * 2008-12-18 2010-06-24 Veeco Instruments, Inc. Linear Deposition Source
US20100285218A1 (en) * 2008-12-18 2010-11-11 Veeco Instruments Inc. Linear Deposition Source
US10026436B2 (en) * 2009-07-01 2018-07-17 Nordson Corporation Apparatus and methods for supporting workpieces during plasma processing
DE102010016792A1 (de) 2010-05-05 2011-11-10 Aixtron Ag Bevorratungsmagazin einer CVD-Anlage
JP5654807B2 (ja) * 2010-09-07 2015-01-14 東京エレクトロン株式会社 基板搬送方法及び記憶媒体
FR3025219B1 (fr) * 2014-09-03 2016-12-02 Riber Dispositif sous vide pour le traitement ou l'analyse d'un echantillon
FR3025220B1 (fr) * 2014-09-03 2016-09-09 Riber Dispositif sous vide pour le traitement ou l'analyse d'un echantillon
CN106637416B (zh) * 2016-12-28 2018-11-20 厦门大学 矢量强磁场下分子束外延及其原位表征装置
CN118180074B (zh) * 2022-12-13 2025-08-12 武汉锐晶激光芯片技术有限公司 一种分子束外延设备生长室组件

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3839084A (en) * 1972-11-29 1974-10-01 Bell Telephone Labor Inc Molecular beam epitaxy method for fabricating magnesium doped thin films of group iii(a)-v(a) compounds
US4171234A (en) * 1976-07-20 1979-10-16 Matsushita Electric Industrial Co., Ltd. Method of fabricating three-dimensional epitaxial layers utilizing molecular beams of varied angles
GB2010335A (en) * 1977-11-29 1979-06-27 Dobson C Improvements Relating to Vacuum Deposition Chamber
US4681773A (en) * 1981-03-27 1987-07-21 American Telephone And Telegraph Company At&T Bell Laboratories Apparatus for simultaneous molecular beam deposition on a plurality of substrates
FR2502643B1 (fr) * 1981-03-27 1986-05-02 Western Electric Co Appareil et procede de depot par jet moleculaire sur plusieurs substrats
US4569829A (en) * 1983-11-10 1986-02-11 Texas Instruments Incorporated MBE Source bakeout system
JP2509170B2 (ja) * 1983-11-10 1996-06-19 テキサス インスツルメンツ インコーポレイテッド 半導体ウェハ処理システム
US4592308A (en) * 1983-11-10 1986-06-03 Texas Instruments Incorporated Solderless MBE system
US4605469A (en) * 1983-11-10 1986-08-12 Texas Instruments Incorporated MBE system with in-situ mounting
JPS60108400A (ja) * 1983-11-15 1985-06-13 Toshiba Corp 分子線結晶成長装置
JPS61107720A (ja) * 1984-10-31 1986-05-26 Hitachi Ltd 分子線エピタキシ装置
US4636268A (en) * 1984-11-30 1987-01-13 At&T Bell Laboratories Chemical beam deposition method utilizing alkyl compounds in a carrier gas
JPS61280610A (ja) * 1985-06-06 1986-12-11 Toshiba Corp 分子線エピタキシヤル成長装置
JPS6235513A (ja) * 1985-08-09 1987-02-16 Hitachi Ltd 分子線エピタキシ装置
JPS6261315A (ja) * 1985-09-11 1987-03-18 Sharp Corp 分子線エピタキシ−装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10261362A1 (de) * 2002-12-30 2004-07-15 Osram Opto Semiconductors Gmbh Substrat-Halter
DE10261362B4 (de) * 2002-12-30 2008-05-21 Osram Opto Semiconductors Gmbh Substrat-Halter
DE10261362B8 (de) * 2002-12-30 2008-08-28 Osram Opto Semiconductors Gmbh Substrat-Halter

Also Published As

Publication number Publication date
KR930010751B1 (ko) 1993-11-10
DE68926577T2 (de) 1996-10-02
KR930010750B1 (ko) 1993-11-10
US4944246A (en) 1990-07-31
EP0529687B1 (en) 1996-05-29
EP0335267A2 (en) 1989-10-04
DE68916457D1 (de) 1994-08-04
EP0529687A2 (en) 1993-03-03
EP0529687A3 (en) 1993-03-24
EP0335267A3 (en) 1990-10-31
EP0335267B1 (en) 1994-06-29
DE68926577D1 (de) 1996-07-04
TW202485B (cg-RX-API-DMAC10.html) 1993-03-21
KR890016632A (ko) 1989-11-29
CA1333038C (en) 1994-11-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee