DE68913334D1 - Synchroner Gleichrichter. - Google Patents

Synchroner Gleichrichter.

Info

Publication number
DE68913334D1
DE68913334D1 DE89304149T DE68913334T DE68913334D1 DE 68913334 D1 DE68913334 D1 DE 68913334D1 DE 89304149 T DE89304149 T DE 89304149T DE 68913334 T DE68913334 T DE 68913334T DE 68913334 D1 DE68913334 D1 DE 68913334D1
Authority
DE
Germany
Prior art keywords
synchronous rectifier
rectifier
synchronous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE89304149T
Other languages
English (en)
Other versions
DE68913334T2 (de
Inventor
Khai Doan The Ngo
John Palmer Walden
Robert Louis Steigerwald
Bantval Jayant Baliga
Charles Steven Korman
Hseuh-Rong Chang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Application granted granted Critical
Publication of DE68913334D1 publication Critical patent/DE68913334D1/de
Publication of DE68913334T2 publication Critical patent/DE68913334T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Rectifiers (AREA)
  • Dc-Dc Converters (AREA)
  • Electronic Switches (AREA)
DE68913334T 1988-04-27 1989-04-26 Synchroner Gleichrichter. Expired - Lifetime DE68913334T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/186,983 US4903189A (en) 1988-04-27 1988-04-27 Low noise, high frequency synchronous rectifier

Publications (2)

Publication Number Publication Date
DE68913334D1 true DE68913334D1 (de) 1994-04-07
DE68913334T2 DE68913334T2 (de) 1995-09-14

Family

ID=22687121

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68913334T Expired - Lifetime DE68913334T2 (de) 1988-04-27 1989-04-26 Synchroner Gleichrichter.

Country Status (4)

Country Link
US (1) US4903189A (de)
EP (1) EP0339963B1 (de)
JP (1) JPH0213268A (de)
DE (1) DE68913334T2 (de)

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US5179512A (en) * 1991-09-18 1993-01-12 General Electric Company Gate drive for synchronous rectifiers in resonant converters
DE69312509T2 (de) 1992-05-29 1998-02-26 Minnesota Mining & Mfg Rückschlagventil
US5544038A (en) * 1992-09-21 1996-08-06 General Electric Company Synchronous rectifier package for high-efficiency operation
US5451798A (en) * 1993-03-18 1995-09-19 Canon Kabushiki Kaisha Semiconductor device and its fabrication method
US5303138A (en) * 1993-04-29 1994-04-12 At&T Bell Laboratories Low loss synchronous rectifier for application to clamped-mode power converters
US5365102A (en) * 1993-07-06 1994-11-15 North Carolina State University Schottky barrier rectifier with MOS trench
US5323040A (en) * 1993-09-27 1994-06-21 North Carolina State University At Raleigh Silicon carbide field effect device
US5514604A (en) * 1993-12-08 1996-05-07 General Electric Company Vertical channel silicon carbide metal-oxide-semiconductor field effect transistor with self-aligned gate for microwave and power applications, and method of making
US5396085A (en) * 1993-12-28 1995-03-07 North Carolina State University Silicon carbide switching device with rectifying-gate
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US5471075A (en) * 1994-05-26 1995-11-28 North Carolina State University Dual-channel emitter switched thyristor with trench gate
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US5637898A (en) * 1995-12-22 1997-06-10 North Carolina State University Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance
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US6232752B1 (en) * 1999-11-10 2001-05-15 Stephen R. Bissell DC/DC converter with synchronous switching regulation
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US7078296B2 (en) 2002-01-16 2006-07-18 Fairchild Semiconductor Corporation Self-aligned trench MOSFETs and methods for making the same
US6958275B2 (en) * 2003-03-11 2005-10-25 Integrated Discrete Devices, Llc MOSFET power transistors and methods
US6987305B2 (en) * 2003-08-04 2006-01-17 International Rectifier Corporation Integrated FET and schottky device
US7368777B2 (en) 2003-12-30 2008-05-06 Fairchild Semiconductor Corporation Accumulation device with charge balance structure and method of forming the same
US20060073024A1 (en) * 2004-09-17 2006-04-06 Nanocoolers, Inc. Series gated secondary loop power supply configuration for electromagnetic pump and integral combination thereof
US7675090B2 (en) * 2005-05-13 2010-03-09 Flextronics International Usa, Inc. Semiconductor device having a contact on a buffer layer thereof and method of forming the same
US7339208B2 (en) * 2005-05-13 2008-03-04 Coldwatt, Inc. Semiconductor device having multiple lateral channels and method of forming the same
US8461648B2 (en) * 2005-07-27 2013-06-11 Infineon Technologies Austria Ag Semiconductor component with a drift region and a drift control region
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US8110868B2 (en) 2005-07-27 2012-02-07 Infineon Technologies Austria Ag Power semiconductor component with a low on-state resistance
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Also Published As

Publication number Publication date
DE68913334T2 (de) 1995-09-14
JPH0213268A (ja) 1990-01-17
EP0339963A2 (de) 1989-11-02
US4903189A (en) 1990-02-20
EP0339963B1 (de) 1994-03-02
EP0339963A3 (en) 1990-05-23

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