DE68911414D1 - Laserdiode mit Mitteln zur elektrischen Modulation der Intensität des ausgestrahlten Lichts einschliesslich des Ein- und Ausschaltens und zur elektrischen Steuerung der Position des Laserflecks. - Google Patents

Laserdiode mit Mitteln zur elektrischen Modulation der Intensität des ausgestrahlten Lichts einschliesslich des Ein- und Ausschaltens und zur elektrischen Steuerung der Position des Laserflecks.

Info

Publication number
DE68911414D1
DE68911414D1 DE89420280T DE68911414T DE68911414D1 DE 68911414 D1 DE68911414 D1 DE 68911414D1 DE 89420280 T DE89420280 T DE 89420280T DE 68911414 T DE68911414 T DE 68911414T DE 68911414 D1 DE68911414 D1 DE 68911414D1
Authority
DE
Germany
Prior art keywords
intensity
electrical
emitted light
light including
including switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89420280T
Other languages
English (en)
Other versions
DE68911414T2 (de
Inventor
David Joseph C O East Lawrence
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eastman Kodak Co
Original Assignee
Eastman Kodak Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of DE68911414D1 publication Critical patent/DE68911414D1/de
Application granted granted Critical
Publication of DE68911414T2 publication Critical patent/DE68911414T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06236—Controlling other output parameters than intensity or frequency controlling the polarisation, e.g. TM/TE polarisation switching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06243—Controlling other output parameters than intensity or frequency controlling the position or direction of the emitted beam

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE68911414T 1988-08-05 1989-07-27 Laserdiode mit Mitteln zur elektrischen Modulation der Intensität des ausgestrahlten Lichts einschliesslich des Ein- und Ausschaltens und zur elektrischen Steuerung der Position des Laserflecks. Expired - Fee Related DE68911414T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/228,430 US4878222A (en) 1988-08-05 1988-08-05 Diode laser with improved means for electrically modulating the emitted light beam intensity including turn-on and turn-off and electrically controlling the position of the emitted laser beam spot

Publications (2)

Publication Number Publication Date
DE68911414D1 true DE68911414D1 (de) 1994-01-27
DE68911414T2 DE68911414T2 (de) 1994-06-16

Family

ID=22857136

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68911414T Expired - Fee Related DE68911414T2 (de) 1988-08-05 1989-07-27 Laserdiode mit Mitteln zur elektrischen Modulation der Intensität des ausgestrahlten Lichts einschliesslich des Ein- und Ausschaltens und zur elektrischen Steuerung der Position des Laserflecks.

Country Status (5)

Country Link
US (1) US4878222A (de)
EP (1) EP0354141B1 (de)
JP (1) JPH0281494A (de)
CA (1) CA1305775C (de)
DE (1) DE68911414T2 (de)

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US5137844A (en) * 1991-04-05 1992-08-11 Polaroid Corporation Process to adjust output of light emitters
JPH0983082A (ja) * 1995-09-19 1997-03-28 Hitachi Ltd 半導体レーザ素子及び光ディスク装置、並びに光軸調整方法
US6545971B1 (en) * 1999-01-27 2003-04-08 Kabushiki Kaisha Toshiba Information recording/reproducing system for recording/reproducing information in three-dimensional recording medium of a light passing-through type
GB2355111A (en) * 1999-10-09 2001-04-11 Mitel Semiconductor Ab Vertical light emitting device with electrostatic current confinement
US6585947B1 (en) 1999-10-22 2003-07-01 The Board Of Trustess Of The University Of Illinois Method for producing silicon nanoparticles
WO2001031374A1 (en) * 1999-10-22 2001-05-03 The Board Of Trustees Of The University Of Illinois Silicon nanoparticle stimulated emission devices
US6743406B2 (en) 1999-10-22 2004-06-01 The Board Of Trustees Of The University Of Illinois Family of discretely sized silicon nanoparticles and method for producing the same
US6984842B1 (en) 1999-10-25 2006-01-10 The Board Of Trustees Of The University Of Illinois Silicon nanoparticle field effect transistor and transistor memory device
US7838794B2 (en) 1999-12-28 2010-11-23 Gsi Group Corporation Laser-based method and system for removing one or more target link structures
US20040134894A1 (en) * 1999-12-28 2004-07-15 Bo Gu Laser-based system for memory link processing with picosecond lasers
US6281471B1 (en) 1999-12-28 2001-08-28 Gsi Lumonics, Inc. Energy-efficient, laser-based method and system for processing target material
US7723642B2 (en) * 1999-12-28 2010-05-25 Gsi Group Corporation Laser-based system for memory link processing with picosecond lasers
US7671295B2 (en) 2000-01-10 2010-03-02 Electro Scientific Industries, Inc. Processing a memory link with a set of at least two laser pulses
GB2373369A (en) * 2001-03-12 2002-09-18 Univ Bristol Laser diodes
US6972268B2 (en) 2001-03-29 2005-12-06 Gsi Lumonics Corporation Methods and systems for processing a device, methods and systems for modeling same and the device
US6992298B2 (en) 2001-11-21 2006-01-31 The Board Of Trustees Of The University Of Illinois Coated spherical silicon nanoparticle thin film UV detector with UV response and method of making
JP2006080427A (ja) * 2004-09-13 2006-03-23 Univ Of Tokyo 半導体発光素子
CN111213241B (zh) * 2018-06-30 2023-09-22 魏进 半导体器件、半导体设备及其制造方法

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US3340479A (en) * 1963-06-14 1967-09-05 Bell Telephone Labor Inc Laser tunable by junction coupling
US3305685A (en) * 1963-11-07 1967-02-21 Univ California Semiconductor laser and method
US3518574A (en) * 1964-05-01 1970-06-30 Ibm Injection laser device
US3402366A (en) * 1965-02-26 1968-09-17 Ibm Beam scanning in injection lasers
US3768037A (en) * 1965-11-26 1973-10-23 Hitachi Ltd Semiconductor diode laser device
US3436679A (en) * 1966-03-07 1969-04-01 Gen Electric Semiconductor junction laser with electronically displaceable and deflectable beam
US3508111A (en) * 1966-09-21 1970-04-21 Ibm Light emitting semiconductor device with light emission from selected portion(s) of p-n junction
US3517337A (en) * 1967-10-26 1970-06-23 Ibm Modulation of scanning beams in injection lasers
US3702975A (en) * 1970-12-09 1972-11-14 Bell Telephone Labor Inc Low threshold stripe geometry injection laser
US3959808A (en) * 1974-09-19 1976-05-25 Northern Electric Company Limited Variable stripe width semiconductor laser
US4152711A (en) * 1976-04-01 1979-05-01 Mitsubishi Denki Kabuchiki Kaisha Semiconductor controlled luminescent device
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US4212020A (en) * 1978-07-21 1980-07-08 California Institute Of Technology Solid state electro-optical devices on a semi-insulating substrate
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JPS5681994A (en) * 1979-12-07 1981-07-04 Seiji Yasu Field effect type semiconductor laser and manufacture thereof
JPS56104488A (en) * 1980-01-23 1981-08-20 Hitachi Ltd Semiconductor laser element
JPS56152289A (en) * 1980-04-25 1981-11-25 Univ Osaka Stripe type semiconductor laser with gate electrode
JPS57176785A (en) * 1981-04-22 1982-10-30 Hitachi Ltd Semiconductor laser device
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US4475200A (en) * 1981-12-03 1984-10-02 Rockwell International Corporation Semiconductor laser beam scanner
JPS58114479A (ja) * 1981-12-26 1983-07-07 Fujitsu Ltd 半導体発光装置
US4675518A (en) * 1982-03-05 1987-06-23 Omron Tateisi Electronics Co. Optical bistable device
JPS594192A (ja) * 1982-06-30 1984-01-10 Sharp Corp 半導体レ−ザ装置
JPH0632332B2 (ja) * 1984-08-24 1994-04-27 日本電気株式会社 半導体レ−ザ装置
JPS61134093A (ja) * 1984-12-05 1986-06-21 Nec Corp 半導体レ−ザを含む集積素子
US4700353A (en) * 1985-08-12 1987-10-13 Cornell Research Foundation, Inc. Active modulation of quantum well lasers by energy shifts in gain spectra with applied electric field
JPS63111688A (ja) * 1986-10-29 1988-05-16 Mitsubishi Electric Corp 多点発光型レ−ザ・ダイオ−ド・アレイ

Also Published As

Publication number Publication date
EP0354141A2 (de) 1990-02-07
EP0354141A3 (en) 1990-09-26
EP0354141B1 (de) 1993-12-15
JPH0281494A (ja) 1990-03-22
DE68911414T2 (de) 1994-06-16
US4878222A (en) 1989-10-31
CA1305775C (en) 1992-07-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee