DE69009561D1 - Halbleiterlaser zur selektiven Ausstrahlung von Licht mit verschiedenen Wellenlängen. - Google Patents

Halbleiterlaser zur selektiven Ausstrahlung von Licht mit verschiedenen Wellenlängen.

Info

Publication number
DE69009561D1
DE69009561D1 DE69009561T DE69009561T DE69009561D1 DE 69009561 D1 DE69009561 D1 DE 69009561D1 DE 69009561 T DE69009561 T DE 69009561T DE 69009561 T DE69009561 T DE 69009561T DE 69009561 D1 DE69009561 D1 DE 69009561D1
Authority
DE
Germany
Prior art keywords
light
semiconductor laser
different wavelengths
selective emission
selective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69009561T
Other languages
English (en)
Other versions
DE69009561T2 (de
Inventor
Sotomitsu Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1083206A external-priority patent/JP2608325B2/ja
Priority claimed from JP1152592A external-priority patent/JP2703997B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69009561D1 publication Critical patent/DE69009561D1/de
Publication of DE69009561T2 publication Critical patent/DE69009561T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3418—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers using transitions from higher quantum levels

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE69009561T 1989-03-31 1990-03-30 Halbleiterlaser zur selektiven Ausstrahlung von Licht mit verschiedenen Wellenlängen. Expired - Fee Related DE69009561T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1083206A JP2608325B2 (ja) 1989-03-31 1989-03-31 半導体レーザ
JP1152592A JP2703997B2 (ja) 1989-06-14 1989-06-14 半導体レーザ

Publications (2)

Publication Number Publication Date
DE69009561D1 true DE69009561D1 (de) 1994-07-14
DE69009561T2 DE69009561T2 (de) 1994-10-13

Family

ID=26424266

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69009561T Expired - Fee Related DE69009561T2 (de) 1989-03-31 1990-03-30 Halbleiterlaser zur selektiven Ausstrahlung von Licht mit verschiedenen Wellenlängen.

Country Status (3)

Country Link
US (1) US5060235A (de)
EP (1) EP0390200B1 (de)
DE (1) DE69009561T2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2689698B2 (ja) * 1990-07-19 1997-12-10 国際電信電話株式会社 αパラメータ符号を反転させた半導体素子
US5224114A (en) * 1990-11-11 1993-06-29 Canon Kabushiki Kaisha Semiconductor laser devices with a plurality of light emitting layers having different bands gaps and methods for driving the same
JP2957264B2 (ja) * 1990-11-11 1999-10-04 キヤノン株式会社 半導体レーザ素子及びその駆動方法
US5200969A (en) * 1991-10-18 1993-04-06 Xerox Corporation Switchable multiple wavelength semiconductor laser
US5392308A (en) * 1993-01-07 1995-02-21 Sdl, Inc. Semiconductor laser with integral spatial mode filter
US5343542A (en) * 1993-04-22 1994-08-30 International Business Machines Corporation Tapered fabry-perot waveguide optical demultiplexer
US5376582A (en) * 1993-10-15 1994-12-27 International Business Machines Corporation Planar, topology-free, single-mode, high-power semiconductor quantum-well laser with non-absorbing mirrors and current confinement
FR2731856B1 (fr) * 1995-03-16 1997-04-30 Alcatel Nv Dispositif photonique duplexeur
JP2000332346A (ja) * 1999-05-21 2000-11-30 Fuji Photo Film Co Ltd 半導体レーザーおよび光波長変換モジュール
US7474682B2 (en) * 2003-12-22 2009-01-06 Panasonic Corporation Semiconductor laser device and laser projector
WO2008014606A1 (en) * 2006-07-31 2008-02-07 Onechip Photonics Inc. Integrated vertical wavelength (de)multiplexer using tapered waveguides
JP5424136B2 (ja) 2009-10-22 2014-02-26 日本電気株式会社 波長可変レーザ装置、光モジュールおよび波長可変レーザの制御方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61196592A (ja) * 1985-02-26 1986-08-30 Mitsubishi Electric Corp 複合共振器型半導体レ−ザ装置の製造方法
JPS621296A (ja) * 1985-06-26 1987-01-07 Sharp Corp 多端子型半導体レ−ザ素子
DE3751548T2 (de) * 1986-07-25 1996-04-11 Mitsubishi Electric Corp Halbleiterlaser.
JPS63312688A (ja) * 1987-06-15 1988-12-21 Mitsubishi Electric Corp 半導体レ−ザ及びその使用方法
JP2543551B2 (ja) * 1987-12-28 1996-10-16 キヤノン株式会社 半導体レ―ザ―
US4930132A (en) * 1987-12-28 1990-05-29 Canon Kabushiki Kaisha Second harmonic wave generating device having active layer and second harmonic wave generating layer on same substrate
EP0361399A3 (de) * 1988-09-28 1990-07-18 Canon Kabushiki Kaisha Halbleiterlaser-Vielfachanordnung, die Laser mit Reflexionsmitteln enthält, die verschiedene Wellenlängen-Selektionseigenschaften haben

Also Published As

Publication number Publication date
EP0390200A2 (de) 1990-10-03
US5060235A (en) 1991-10-22
DE69009561T2 (de) 1994-10-13
EP0390200A3 (de) 1991-07-31
EP0390200B1 (de) 1994-06-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee