DE68908530D1 - Nachladegeraet fuer das czochralski-verfahren. - Google Patents

Nachladegeraet fuer das czochralski-verfahren.

Info

Publication number
DE68908530D1
DE68908530D1 DE8989311083T DE68908530T DE68908530D1 DE 68908530 D1 DE68908530 D1 DE 68908530D1 DE 8989311083 T DE8989311083 T DE 8989311083T DE 68908530 T DE68908530 T DE 68908530T DE 68908530 D1 DE68908530 D1 DE 68908530D1
Authority
DE
Germany
Prior art keywords
czochralski process
recharge device
recharge
czochralski
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8989311083T
Other languages
English (en)
Other versions
DE68908530T2 (de
Inventor
Hiroyuki Ibe
Toshiharu Uesugi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of DE68908530D1 publication Critical patent/DE68908530D1/de
Application granted granted Critical
Publication of DE68908530T2 publication Critical patent/DE68908530T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE89311083T 1988-10-27 1989-10-27 Nachladegerät für das Czochralski-Verfahren. Expired - Fee Related DE68908530T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63269576A JPH0631193B2 (ja) 1988-10-27 1988-10-27 リチャージ装置

Publications (2)

Publication Number Publication Date
DE68908530D1 true DE68908530D1 (de) 1993-09-23
DE68908530T2 DE68908530T2 (de) 1994-03-17

Family

ID=17474288

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89311083T Expired - Fee Related DE68908530T2 (de) 1988-10-27 1989-10-27 Nachladegerät für das Czochralski-Verfahren.

Country Status (4)

Country Link
US (1) US5009864A (de)
EP (1) EP0369626B1 (de)
JP (1) JPH0631193B2 (de)
DE (1) DE68908530T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69112463T2 (de) * 1990-03-30 1996-02-15 Shinetsu Handotai Kk Vorrichtung zur Herstellung von Monokristallen nach dem Czochralski-Verfahren.
DE4123337A1 (de) * 1991-07-15 1993-01-21 Leybold Ag Vorrichtung zum kristallziehen
JPH08310892A (ja) * 1995-05-16 1996-11-26 Komatsu Electron Metals Co Ltd 半導体単結晶製造における供給素材
JP3402040B2 (ja) * 1995-12-27 2003-04-28 信越半導体株式会社 単結晶保持装置
US5958133A (en) * 1996-01-29 1999-09-28 General Signal Corporation Material handling system for growing high-purity crystals
KR970073915A (ko) * 1996-05-28 1997-12-10 페. 좀머캄프, 하. 하게도른 크리스탈 클램프
JP3808135B2 (ja) * 1996-06-13 2006-08-09 コマツ電子金属株式会社 単結晶製造装置
JP3478021B2 (ja) * 1996-09-18 2003-12-10 信越半導体株式会社 結晶保持装置
KR19980079892A (ko) * 1997-03-28 1998-11-25 모리 레이자로 단결정 인상장치
DE19754961A1 (de) * 1997-12-11 1999-06-17 Leybold Systems Gmbh Vorrichtung zum Halten eines Kristallblockes
US7418993B2 (en) * 1998-11-20 2008-09-02 Rolls-Royce Corporation Method and apparatus for production of a cast component

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2507549A (en) * 1947-05-21 1950-05-16 Lee F Smith Servicing device for fluorescent lighting fixtures
US2975036A (en) * 1956-10-05 1961-03-14 Motorola Inc Crystal pulling apparatus
DE1147366B (de) * 1959-03-05 1963-04-18 Maschf Augsburg Nuernberg Ag Kraftschliessende Blockzange fuer Tiefofenkrane
US3156496A (en) * 1963-07-09 1964-11-10 Lucien V Davidson Floating tong
US3337304A (en) * 1965-03-15 1967-08-22 Elmat Corp Crystal growth sampler
US4659421A (en) * 1981-10-02 1987-04-21 Energy Materials Corporation System for growth of single crystal materials with extreme uniformity in their structural and electrical properties
FR2619800B1 (fr) * 1987-08-26 1989-10-27 Comptoir Batiment Palonnier de manutention, en particulier de conteneurs de dechets radio-actifs

Also Published As

Publication number Publication date
EP0369626A1 (de) 1990-05-23
JPH0631193B2 (ja) 1994-04-27
DE68908530T2 (de) 1994-03-17
EP0369626B1 (de) 1993-08-18
US5009864A (en) 1991-04-23
JPH02120294A (ja) 1990-05-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee