DE68902668D1 - Verfahren zur thermischen behandlung von galliumarsenid-einkristallen. - Google Patents
Verfahren zur thermischen behandlung von galliumarsenid-einkristallen.Info
- Publication number
- DE68902668D1 DE68902668D1 DE8989303058T DE68902668T DE68902668D1 DE 68902668 D1 DE68902668 D1 DE 68902668D1 DE 8989303058 T DE8989303058 T DE 8989303058T DE 68902668 T DE68902668 T DE 68902668T DE 68902668 D1 DE68902668 D1 DE 68902668D1
- Authority
- DE
- Germany
- Prior art keywords
- thermal treatment
- gallium arsenide
- arsenide crystals
- crystals
- gallium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63069733A JPH01242498A (ja) | 1988-03-25 | 1988-03-25 | 砒化ガリウム単結晶の熱処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68902668D1 true DE68902668D1 (de) | 1992-10-08 |
DE68902668T2 DE68902668T2 (de) | 1993-01-28 |
Family
ID=13411314
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8989303058T Expired - Lifetime DE68902668T2 (de) | 1988-03-25 | 1989-03-28 | Verfahren zur thermischen behandlung von galliumarsenid-einkristallen. |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0334684B1 (de) |
JP (1) | JPH01242498A (de) |
DE (1) | DE68902668T2 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2639470B2 (ja) * | 1988-07-20 | 1997-08-13 | 株式会社ジャパンエナジー | GaAs単結晶のウエハの製造方法 |
JPH02293399A (ja) * | 1989-05-08 | 1990-12-04 | Showa Denko Kk | GaAsインゴットの熱処理方法 |
JP3656261B2 (ja) * | 1994-10-24 | 2005-06-08 | 住友電気工業株式会社 | GaAs結晶の熱処理方法 |
JP2005272201A (ja) * | 2004-03-24 | 2005-10-06 | Sumitomo Electric Ind Ltd | ガリウム砒素単結晶とその製造方法 |
JP6459900B2 (ja) * | 2015-10-26 | 2019-01-30 | 株式会社Sumco | シリコンウェーハの検査方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2570394B1 (fr) * | 1984-09-14 | 1986-12-05 | Labo Electronique Physique | Procede de realisation d'un monocristal d'arseniure de gallium et d'indium |
-
1988
- 1988-03-25 JP JP63069733A patent/JPH01242498A/ja active Granted
-
1989
- 1989-03-28 DE DE8989303058T patent/DE68902668T2/de not_active Expired - Lifetime
- 1989-03-28 EP EP89303058A patent/EP0334684B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0334684B1 (de) | 1992-09-02 |
EP0334684A1 (de) | 1989-09-27 |
JPH01242498A (ja) | 1989-09-27 |
DE68902668T2 (de) | 1993-01-28 |
JPH0474320B2 (de) | 1992-11-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8381 | Inventor (new situation) |
Free format text: KITAGAWARA, YUTAKA, TAKASAKI-SHI GUNMA-KEN, JP KUWABARA, SUSUMU, ANNAKA-SHI GUNMA-KEN, JP TAKENAKA, TAKAO, HARAICHI, JP |
|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |