DE68903228D1 - Verfahren zur fluoreszenzverbesserung von ti:al2o3-laser-kristallen. - Google Patents

Verfahren zur fluoreszenzverbesserung von ti:al2o3-laser-kristallen.

Info

Publication number
DE68903228D1
DE68903228D1 DE8989102157T DE68903228T DE68903228D1 DE 68903228 D1 DE68903228 D1 DE 68903228D1 DE 8989102157 T DE8989102157 T DE 8989102157T DE 68903228 T DE68903228 T DE 68903228T DE 68903228 D1 DE68903228 D1 DE 68903228D1
Authority
DE
Germany
Prior art keywords
fluorescence
improving
laser crystals
al2o3
al2o3 laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8989102157T
Other languages
English (en)
Other versions
DE68903228T2 (de
Inventor
Milan Rastislaw Kokta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Union Carbide Corp
Original Assignee
Union Carbide Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Union Carbide Corp filed Critical Union Carbide Corp
Application granted granted Critical
Publication of DE68903228D1 publication Critical patent/DE68903228D1/de
Publication of DE68903228T2 publication Critical patent/DE68903228T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Lasers (AREA)
DE8989102157T 1988-02-09 1989-02-08 Verfahren zur fluoreszenzverbesserung von ti:al2o3-laser-kristallen. Expired - Fee Related DE68903228T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/154,033 US4836953A (en) 1988-02-09 1988-02-09 Processes for enhancing fluorescence of TI:A1203 tunable laser crystals

Publications (2)

Publication Number Publication Date
DE68903228D1 true DE68903228D1 (de) 1992-11-26
DE68903228T2 DE68903228T2 (de) 1993-03-04

Family

ID=22549725

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8989102157T Expired - Fee Related DE68903228T2 (de) 1988-02-09 1989-02-08 Verfahren zur fluoreszenzverbesserung von ti:al2o3-laser-kristallen.

Country Status (5)

Country Link
US (1) US4836953A (de)
EP (1) EP0328073B1 (de)
JP (1) JPH026393A (de)
CA (1) CA1321122C (de)
DE (1) DE68903228T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4988402A (en) * 1988-02-09 1991-01-29 Union Carbide Chemicals And Plastics Company Inc. Processes for enhancing fluorescence of tunable titanium-doped oxide laser crystals
US5037200A (en) * 1989-07-11 1991-08-06 Tosoh Corporation Laser-operated detector
JP3351477B2 (ja) * 1993-02-04 2002-11-25 理化学研究所 固体レーザー結晶薄膜作成方法および固体レーザー結晶薄膜作成装置
JPH0667310U (ja) * 1993-02-23 1994-09-22 節子 金田 ペット・ボトル
US5307358A (en) * 1993-05-20 1994-04-26 The United States Of America As Represented By The Secretary Of The Navy Wavelength dispersive gain element for a tunable laser
US6996137B2 (en) * 2002-08-06 2006-02-07 Raytheon Company Solid-state devices with radial dopant valence profile
JPWO2010079779A1 (ja) * 2009-01-07 2012-06-21 公益財団法人新産業創造研究機構 波長可変レーザー発振酸化物結晶の作製方法
RU2013131002A (ru) * 2010-12-06 2015-01-20 Конинклейке Филипс Электроникс Н.В. СПОСОБ УВЕЛИЧЕНИЯ СОДЕРЖАНИЯ Ce3+ В ЛАЗЕРНЫХ МАТЕРИАЛАХ
CZ201613A3 (cs) 2016-01-12 2017-04-12 Preciosa, A.S. Způsob zvýšení luminiscenční účinnosti titanem dopovaného oxidového krystalu
CN108048908A (zh) * 2017-12-14 2018-05-18 天通银厦新材料有限公司 一种大尺寸掺钛蓝宝石激光晶体及其制造工艺
RU2692128C1 (ru) * 2018-04-02 2019-06-21 Федеральное государственное автономное образовательное учреждение высшего образования "Уральский федеральный университет имени первого Президента России Б.Н. Ельцина" (УрФУ) СПОСОБ СОЗДАНИЯ ЛАЗЕРНО-АКТИВНЫХ ЦЕНТРОВ ОКРАСКИ В α-Al2O3

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4038117A (en) * 1975-09-04 1977-07-26 Ilc Technology, Inc. Process for gas polishing sapphire and the like
US4711696A (en) * 1985-05-20 1987-12-08 Union Carbide Corporation Process for enhancing Ti:Al2 O3 tunable laser crystal fluorescence by controlling crystal growth atmosphere
US4587035A (en) * 1985-05-20 1986-05-06 Union Carbide Corporation Process for enhancing Ti:Al2 O3 tunable laser crystal fluorescence by annealing

Also Published As

Publication number Publication date
DE68903228T2 (de) 1993-03-04
US4836953A (en) 1989-06-06
CA1321122C (en) 1993-08-10
JPH026393A (ja) 1990-01-10
EP0328073B1 (de) 1992-10-21
JPH0513914B2 (de) 1993-02-23
EP0328073A1 (de) 1989-08-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee