DE68901980T2 - Korngrenzen-uebergangseinrichtungen unter verwendung von hochtemperatur-supraleitern. - Google Patents

Korngrenzen-uebergangseinrichtungen unter verwendung von hochtemperatur-supraleitern.

Info

Publication number
DE68901980T2
DE68901980T2 DE8989810047T DE68901980T DE68901980T2 DE 68901980 T2 DE68901980 T2 DE 68901980T2 DE 8989810047 T DE8989810047 T DE 8989810047T DE 68901980 T DE68901980 T DE 68901980T DE 68901980 T2 DE68901980 T2 DE 68901980T2
Authority
DE
Germany
Prior art keywords
ladders
high temperature
temperature super
transition devices
limit transition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8989810047T
Other languages
English (en)
Other versions
DE68901980D1 (de
Inventor
Praveen Chaudhari
Cheng-Chung John Chi
Duane Brian Dimos
Jochen Dieter Mannhardt
Chang Chyi Tsuei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE68901980D1 publication Critical patent/DE68901980D1/de
Publication of DE68901980T2 publication Critical patent/DE68901980T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0912—Manufacture or treatment of Josephson-effect devices
    • H10N60/0941—Manufacture or treatment of Josephson-effect devices comprising high-Tc ceramic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/10—Junction-based devices
    • H10N60/12—Josephson-effect devices
    • H10N60/124—Josephson-effect devices comprising high-Tc ceramic materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y10S505/702—Josephson junction present
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/728—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
DE8989810047T 1988-02-16 1989-01-19 Korngrenzen-uebergangseinrichtungen unter verwendung von hochtemperatur-supraleitern. Expired - Lifetime DE68901980T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/155,946 US5162298A (en) 1988-02-16 1988-02-16 Grain boundary junction devices using high tc superconductors

Publications (2)

Publication Number Publication Date
DE68901980D1 DE68901980D1 (de) 1992-08-13
DE68901980T2 true DE68901980T2 (de) 1993-02-25

Family

ID=22557423

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8989810047T Expired - Lifetime DE68901980T2 (de) 1988-02-16 1989-01-19 Korngrenzen-uebergangseinrichtungen unter verwendung von hochtemperatur-supraleitern.

Country Status (4)

Country Link
US (2) US5162298A (de)
EP (1) EP0329603B1 (de)
JP (1) JPH0828536B2 (de)
DE (1) DE68901980T2 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5077266A (en) * 1988-09-14 1991-12-31 Hitachi, Ltd. Method of forming weak-link josephson junction, and superconducting device employing the junction
US5157466A (en) * 1991-03-19 1992-10-20 Conductus, Inc. Grain boundary junctions in high temperature superconductor films
JPH05129671A (ja) * 1991-10-31 1993-05-25 Sharp Corp 超電導磁気抵抗効果素子およびその製造方法
DE69224605T2 (de) * 1991-11-28 1998-11-05 Kyocera Corp Kupferoxid-Supraleiter, Verfahren zu seiner Herstellung und dabei verwendete Kupferverbindung
CA2084556C (en) * 1991-12-06 1996-12-24 So Tanaka Method for manufacturing an artificial grain boundary type josephson junction device
KR940008695B1 (ko) * 1991-12-26 1994-09-24 한국과학기술연구원 입계형 반도성 자기 콘덴서
US5358928A (en) * 1992-09-22 1994-10-25 Sandia Corporation High temperature superconductor step-edge Josephson junctions using Ti-Ca-Ba-Cu-O
JP3149996B2 (ja) * 1992-11-10 2001-03-26 財団法人国際超電導産業技術研究センター ジョセフソン結合の作製法
SE506807C2 (sv) * 1994-05-03 1998-02-16 Ericsson Telefon Ab L M Anordning tillhandahållande svaga länkar i en supraledande film och anordning omfattande svaga länkar
US5714791A (en) * 1995-12-22 1998-02-03 International Business Machines Corporation On-chip Peltier cooling devices on a micromachined membrane structure
US5831278A (en) * 1996-03-15 1998-11-03 Conductus, Inc. Three-terminal devices with wide Josephson junctions and asymmetric control lines
US6331680B1 (en) 1996-08-07 2001-12-18 Visteon Global Technologies, Inc. Multilayer electrical interconnection device and method of making same
US20040134967A1 (en) * 1997-05-22 2004-07-15 Conductis, Inc. Interface engineered high-Tc Josephson junctions
US20040266627A1 (en) * 1997-05-22 2004-12-30 Moeckly Brian H. High-temperature superconductor devices and methods of forming the same
JP2971066B1 (ja) * 1998-12-02 1999-11-02 株式会社日立製作所 超電導単一磁束量子論理回路
US6734699B1 (en) 1999-07-14 2004-05-11 Northrop Grumman Corporation Self-clocked complementary logic
JP4132720B2 (ja) * 2001-05-07 2008-08-13 独立行政法人科学技術振興機構 量子干渉型磁束計の製造方法
US20030102470A1 (en) * 2001-08-30 2003-06-05 Evgeni Il'ichev Oxygen doping of josephson junctions
AU2003269797A1 (en) * 2003-01-23 2004-12-13 The Trustees Of Columbia University In The City Of New York Method for preparing atomistically straight boundary junctions in high temperature superconducting oxides
AU2003295308A1 (en) 2003-01-31 2004-08-30 The Trustees Of Columbia University In The City Ofnew York Method for preparing atomistically straight boundary junctions in high temperature superconducting oxide
US20060073978A1 (en) * 2003-02-06 2006-04-06 Brown University Method and apparatus for making continuous films of a single crystal material
US7002366B2 (en) * 2003-08-20 2006-02-21 Northrop Grumman Corporation Superconducting constant current source
US20050062131A1 (en) * 2003-09-24 2005-03-24 Murduck James Matthew A1/A1Ox/A1 resistor process for integrated circuits
US8571614B1 (en) 2009-10-12 2013-10-29 Hypres, Inc. Low-power biasing networks for superconducting integrated circuits
US9768371B2 (en) 2012-03-08 2017-09-19 D-Wave Systems Inc. Systems and methods for fabrication of superconducting integrated circuits
US10222416B1 (en) 2015-04-14 2019-03-05 Hypres, Inc. System and method for array diagnostics in superconducting integrated circuit
EP4142457A1 (de) 2017-02-01 2023-03-01 D-Wave Systems Inc. Systeme und verfahren zur herstellung von supraleitenden integrierten schaltungen
US20200152851A1 (en) 2018-11-13 2020-05-14 D-Wave Systems Inc. Systems and methods for fabricating superconducting integrated circuits

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4290843A (en) * 1980-02-19 1981-09-22 Texas Instruments Incorporated Epitaxial growth of magnetic memory film on implanted substrate
JPS59210677A (ja) * 1983-05-14 1984-11-29 Nippon Telegr & Teleph Corp <Ntt> ジヨセフソン接合を用いた光検出素子
JPH0763100B2 (ja) * 1986-05-21 1995-07-05 日本電信電話株式会社 ジヨセフソン接合素子及びその製法
JPH01120878A (ja) * 1987-11-04 1989-05-12 Seiko Epson Corp ジョセフソン効果素子
JPH01161881A (ja) * 1987-12-18 1989-06-26 Nec Corp ジョセフソン素子およびその製造方法
GB2215548B (en) * 1988-02-26 1991-10-23 Gen Electric Co Plc A method of fabricating superconducting electronic devices
US5157466A (en) * 1991-03-19 1992-10-20 Conductus, Inc. Grain boundary junctions in high temperature superconductor films

Also Published As

Publication number Publication date
EP0329603B1 (de) 1992-07-08
US5278140A (en) 1994-01-11
EP0329603A2 (de) 1989-08-23
US5162298A (en) 1992-11-10
EP0329603A3 (en) 1989-11-08
JPH01218077A (ja) 1989-08-31
DE68901980D1 (de) 1992-08-13
JPH0828536B2 (ja) 1996-03-21

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