DE68908480D1 - Hochtemperatursupraleiter-gallatkristallstruktur. - Google Patents

Hochtemperatursupraleiter-gallatkristallstruktur.

Info

Publication number
DE68908480D1
DE68908480D1 DE8989106765T DE68908480T DE68908480D1 DE 68908480 D1 DE68908480 D1 DE 68908480D1 DE 8989106765 T DE8989106765 T DE 8989106765T DE 68908480 T DE68908480 T DE 68908480T DE 68908480 D1 DE68908480 D1 DE 68908480D1
Authority
DE
Germany
Prior art keywords
high temperature
crystal structure
temperature super
gallate crystal
super ladder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8989106765T
Other languages
English (en)
Other versions
DE68908480T2 (de
Inventor
William Joseph Gallagher
Edward August Giess
Arunava Gupta
Robert Benjamin Laibowitz
Eugene John M O'sullivan
Robert Lee Sandstrom
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE68908480D1 publication Critical patent/DE68908480D1/de
Application granted granted Critical
Publication of DE68908480T2 publication Critical patent/DE68908480T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
    • H01P3/08—Microstrips; Strip lines
    • H01P3/085—Triplate lines
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0604—Monocrystalline substrates, e.g. epitaxial growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0661—Processes performed after copper oxide formation, e.g. patterning
    • H10N60/0716—Passivating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/20—Permanent superconducting devices
    • H10N60/203—Permanent superconducting devices comprising high-Tc ceramic materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/901—Printed circuit
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9265—Special properties
    • Y10S428/93—Electric superconducting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive
    • Y10S505/702—Josephson junction present
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/704—Wire, fiber, or cable
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49014—Superconductor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
DE89106765T 1988-06-08 1989-04-15 Hochtemperatursupraleiter-Gallatkristallstruktur. Expired - Fee Related DE68908480T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/204,066 US4962086A (en) 1988-06-08 1988-06-08 High Tc superconductor - gallate crystal structures

Publications (2)

Publication Number Publication Date
DE68908480D1 true DE68908480D1 (de) 1993-09-23
DE68908480T2 DE68908480T2 (de) 1994-03-17

Family

ID=22756482

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89106765T Expired - Fee Related DE68908480T2 (de) 1988-06-08 1989-04-15 Hochtemperatursupraleiter-Gallatkristallstruktur.

Country Status (5)

Country Link
US (1) US4962086A (de)
EP (1) EP0345441B1 (de)
JP (1) JPH07106883B2 (de)
CA (1) CA1335955C (de)
DE (1) DE68908480T2 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6457438A (en) * 1987-08-28 1989-03-03 Mitsubishi Electric Corp Recording medium
JPH02167820A (ja) * 1988-08-10 1990-06-28 Sumitomo Electric Ind Ltd Ｔ１系複合酸化物超電導体薄膜の成膜方法
US5523282A (en) * 1988-08-18 1996-06-04 Trw Inc. High-frequency substrate material for thin-film layered perovskite superconductors
US4996187A (en) * 1988-10-17 1991-02-26 Allied-Signal Inc. Epitaxial Ba-Y-Cu-O superconductor film
JPH0824200B2 (ja) * 1988-11-18 1996-03-06 日本電信電話株式会社 トンネル接合素子
US5256897A (en) * 1988-11-28 1993-10-26 Hitachi, Ltd. Oxide superconducting device
JPH0319382A (ja) * 1989-06-16 1991-01-28 Nippon Telegr & Teleph Corp <Ntt> トンネル接合形ジョセフソン素子
JP2790494B2 (ja) * 1989-10-13 1998-08-27 松下電器産業株式会社 超伝導素子
CA2033137C (en) * 1989-12-22 1995-07-18 Kenjiro Higaki Microwave component and method for fabricating substrate for use in microwave component
US5310707A (en) * 1990-03-28 1994-05-10 Superconductivity Research Laboratory International Substrate material for the preparation of oxide superconductors
JP2519337B2 (ja) * 1990-03-28 1996-07-31 財団法人国際超電導産業技術研究センター 酸化物超電導体作製用の基板材料及び酸化物超電導体の作製方法
US5358927A (en) * 1990-05-31 1994-10-25 Bell Communications Research, Inc. Growth of a,b-axis oriented pervoskite thin films
US5128316A (en) * 1990-06-04 1992-07-07 Eastman Kodak Company Articles containing a cubic perovskite crystal structure
JP2726750B2 (ja) * 1990-11-05 1998-03-11 財団法人 国際超電導産業技術研究センター 酸化物超電導薄膜
CA2053549A1 (en) * 1990-11-15 1992-05-16 John A. Agostinelli Construction of high temperature josephson junction device
JPH06508340A (ja) * 1991-06-11 1994-09-22 スーパーコンダクター・テクノロジーズ、インコーポレイテッド 選択的な同平面配列を有するａ−軸高温超電導薄膜
EP0584410A1 (de) * 1991-07-05 1994-03-02 Conductus, Inc. Supraleitende elektronische Strukturen und Verfahren zu ihrer Herstellung
US5306705A (en) * 1991-07-18 1994-04-26 Board Of Trustees Of The Leland Stanford Junior University Superconductor-normal-superconductor with distributed Sharvin point contacts
EP0532815A1 (de) * 1991-09-16 1993-03-24 International Business Machines Corporation Verfahren zur Herstellung von Substraten mit Übereinstimmender kristallographischer Ordnung für Hoch-Tc-Supraleitern
US5468806A (en) * 1992-04-24 1995-11-21 The Furukawa Electric Co., Ltd. Method of manufacturing an oxide superconductor thin film
EP0582889B1 (de) * 1992-07-28 2000-04-05 Nippon Telegraph And Telephone Corporation Übergangsvorrichtung mit Gitteranpassung und Verfahren zu ihrer Herstellung
US5356474A (en) * 1992-11-27 1994-10-18 General Electric Company Apparatus and method for making aligned Hi-Tc tape superconductors
US5310705A (en) * 1993-01-04 1994-05-10 The United States Of America As Represented By The United States Department Of Energy High-field magnets using high-critical-temperature superconducting thin films
US7192661B1 (en) * 1994-11-03 2007-03-20 The United States Of America As Represented By The Secretary Of The Army Rare earth metal compounds for use in high critical temperature thin film super-conducting antennas
US6610633B1 (en) 1995-05-04 2003-08-26 Trw Inc. Superconductor device
WO1997044850A1 (en) * 1996-05-22 1997-11-27 E.I. Du Pont De Nemours And Company Open ground transmission line circuits
DE19634118A1 (de) * 1996-08-23 1998-02-26 Forschungszentrum Juelich Gmbh Schichtenfolge sowie eine solche enthaltendes Bauelement
CN1182597C (zh) * 1997-06-18 2004-12-29 麻省理工学院 将金属氟氧化物转化为超导氧化物的受控转化
US6004688A (en) * 1997-07-16 1999-12-21 The Board Of Regents Of The University Of Texas System Solid oxide fuel cell and doped perovskite lanthanum gallate electrolyte therefor
JP3556586B2 (ja) 2000-09-05 2004-08-18 株式会社東芝 酸化物超電導体の製造方法、酸化物超電導体用原料、および酸化物超電導体用原料の製造方法
WO2009021249A2 (en) 2007-10-29 2009-02-12 Dow Corning Corporation Polar polydimethylsiloxane molds, methods of making the molds, and methods of using the molds for pattern transfer

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6448316A (en) * 1987-08-19 1989-02-22 Asahi Chemical Ind Orientation type superconductive compound oxide material
JP3365672B2 (ja) * 1993-03-08 2003-01-14 住友ゴム工業株式会社 空気入りラジアルタイヤ

Also Published As

Publication number Publication date
EP0345441B1 (de) 1993-08-18
EP0345441A3 (en) 1990-02-28
JPH01320224A (ja) 1989-12-26
US4962086A (en) 1990-10-09
CA1335955C (en) 1995-06-20
EP0345441A2 (de) 1989-12-13
DE68908480T2 (de) 1994-03-17
JPH07106883B2 (ja) 1995-11-15

Similar Documents

Publication Publication Date Title
DE68908480D1 (de) Hochtemperatursupraleiter-gallatkristallstruktur.
DE68901980D1 (de) Korngrenzen-uebergangseinrichtungen unter verwendung von hochtemperatur-supraleitern.
TR27343A (tr) Kinazolin türevleri.
DE68922920D1 (de) Hochtemperatursupraleitendes Oxyd.
DE68908198D1 (de) Epitaxische anordnung von hochtemperatur-supraleitern.
DE68906261D1 (de) Somatropine.
FI884573A0 (fi) Foerfarande foer styrning av luftproduktionen i en skruvkompressor.
DK101689A (da) 4-substituerede pyrazolooe3,4-daapyrimidinderivater
FI891094A (fi) Foerfarande foer behandling av avfallsvatten i undertryck.
FI890162A (fi) Foerfarande foer inaktivering av foeroekningsdugliga filtrerbara sjukdomsalstrare i blodplasmaprodukter.
NO890394D0 (no) Innstillingspropell.
NO890330D0 (no) Fremgangsmaate til fremstilling av forbindelser med psykotrop virkning.
DE68902443D1 (de) Fluorinierte oligophenylderivate.
FI890233A0 (fi) Foerfarande foer reducering av faellningar i anlaeggningar foer indunstning av sulfitavlut.
FI885491A0 (fi) Anordning foer installering av vatten- och vaermeledningsroer i en byggnad.
FI881812A0 (fi) Foerfarande foer regenerering av betningssyror i zinkgalvaniseringsprocesser.
DE68908216D1 (de) Thermoelemente.
FI884263A0 (fi) Anordning foer skaerpning av knivarna i en kapningsvals i en cellulosatorkmaskins arkskaermaskin.
DE58905975D1 (de) Hochtemperatur-Schutzschicht.
FI870248A0 (fi) Stabilt preparat i fast form innehaollande tiolesterderivat.
FI890969A0 (fi) Anslutningsdon foer roerformiga staenger i taelt av kupoltyp.
FI880759A0 (fi) Anordning foer neddoppning av foeremaol i vaetska.
NO903919D0 (no) Innretninger med superledende krystaller.
DK481088D0 (da) Hoejtemperaturbestandigt-mineraluldsfiberroegrensefilter
NO895056D0 (no) Fremgangsmaate for fremstilling av herdeharpikser.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee