DE68908198D1 - Epitaxische anordnung von hochtemperatur-supraleitern. - Google Patents

Epitaxische anordnung von hochtemperatur-supraleitern.

Info

Publication number
DE68908198D1
DE68908198D1 DE8989810041T DE68908198T DE68908198D1 DE 68908198 D1 DE68908198 D1 DE 68908198D1 DE 8989810041 T DE8989810041 T DE 8989810041T DE 68908198 T DE68908198 T DE 68908198T DE 68908198 D1 DE68908198 D1 DE 68908198D1
Authority
DE
Germany
Prior art keywords
epitaxic
ladders
arrangement
high temperature
temperature super
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8989810041T
Other languages
English (en)
Other versions
DE68908198T2 (de
Inventor
Franz Joseph Himpsel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE68908198D1 publication Critical patent/DE68908198D1/de
Application granted granted Critical
Publication of DE68908198T2 publication Critical patent/DE68908198T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/20—Permanent superconducting devices
    • H10N60/203—Permanent superconducting devices comprising high-Tc ceramic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0576—Processes for depositing or forming copper oxide superconductor layers characterised by the substrate
    • H10N60/0604—Monocrystalline substrates, e.g. epitaxial growth
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9265—Special properties
    • Y10S428/93—Electric superconducting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
    • Y10S505/701—Coated or thin film device, i.e. active or passive

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
DE89810041T 1988-02-03 1989-01-18 Epitaxische Anordnung von Hochtemperatur-Supraleitern. Expired - Fee Related DE68908198T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15177288A 1988-02-03 1988-02-03

Publications (2)

Publication Number Publication Date
DE68908198D1 true DE68908198D1 (de) 1993-09-16
DE68908198T2 DE68908198T2 (de) 1994-03-17

Family

ID=22540180

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89810041T Expired - Fee Related DE68908198T2 (de) 1988-02-03 1989-01-18 Epitaxische Anordnung von Hochtemperatur-Supraleitern.

Country Status (5)

Country Link
US (1) US5593951A (de)
EP (1) EP0327493B1 (de)
JP (1) JPH0725640B2 (de)
CA (1) CA1336567C (de)
DE (1) DE68908198T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2546730B2 (ja) * 1990-02-16 1996-10-23 日本電信電話株式会社 酸化物薄膜形成用基板
EP0671764A2 (de) * 1990-10-31 1995-09-13 Sumitomo Electric Industries, Ltd. Verfahren zur Herstellung einer supraleitenden Schaltung
JP3189403B2 (ja) * 1991-07-16 2001-07-16 住友電気工業株式会社 超電導接合を有する素子およびその作製方法
DE69215993T2 (de) * 1991-07-16 1997-06-19 Sumitomo Electric Industries Vorrichtung mit Josephson-Übergang aus supraleitendem Oxyd und Verfahren zu seiner Herstellung
WO1994004530A1 (en) * 1992-08-14 1994-03-03 Korea Research Institute Of Chemical Technology Herbicidal quinolinyloxadiazoles
FR2726399B1 (fr) * 1994-10-27 1997-01-10 Alsthom Cge Alcatel Procede pour la preparation d'un substrat en vue du depot d'une couche mince de materiau supraconducteur
GB9521460D0 (en) * 1995-10-18 1995-12-20 Univ Cardiff Semiconductor devices
US6720654B2 (en) 1998-08-20 2004-04-13 The United States Of America As Represented By The Secretary Of The Navy Electronic devices with cesium barrier film and process for making same
US6144050A (en) * 1998-08-20 2000-11-07 The United States Of America As Represented By The Secretary Of The Navy Electronic devices with strontium barrier film and process for making same
US6351036B1 (en) 1998-08-20 2002-02-26 The United States Of America As Represented By The Secretary Of The Navy Electronic devices with a barrier film and process for making same
US6077775A (en) * 1998-08-20 2000-06-20 The United States Of America As Represented By The Secretary Of The Navy Process for making a semiconductor device with barrier film formation using a metal halide and products thereof
US6734558B2 (en) 1998-08-20 2004-05-11 The United States Of America As Represented By The Secretary Of The Navy Electronic devices with barium barrier film and process for making same
US6188134B1 (en) 1998-08-20 2001-02-13 The United States Of America As Represented By The Secretary Of The Navy Electronic devices with rubidium barrier film and process for making same
US6291876B1 (en) 1998-08-20 2001-09-18 The United States Of America As Represented By The Secretary Of The Navy Electronic devices with composite atomic barrier film and process for making same
JP2000306733A (ja) * 1999-04-19 2000-11-02 Kawatetsu Mining Co Ltd 磁気素子用フェライト磁性膜
JP3401558B2 (ja) * 1999-12-14 2003-04-28 独立行政法人産業技術総合研究所 エピタキシャル複合構造体およびこのものを利用した素子
US6465887B1 (en) 2000-05-03 2002-10-15 The United States Of America As Represented By The Secretary Of The Navy Electronic devices with diffusion barrier and process for making same
EP1805817B1 (de) * 2004-10-01 2016-11-16 American Superconductor Corporation Supraleitende dickfilme mit verbesserter leistung

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4980339A (en) * 1987-07-29 1990-12-25 Matsushita Electric Industrial Co., Ltd. Superconductor structure
DE3736523A1 (de) * 1987-10-28 1989-05-11 Hoechst Ag Duenner supraleitender film, seine herstellung und verwendung
DE3853273T2 (de) * 1987-12-25 1995-10-19 Sumitomo Electric Industries Ein Halbleitersubstrat mit einem supraleitenden Dünnfilm.
US5296458A (en) * 1988-02-03 1994-03-22 International Business Machines Corporation Epitaxy of high Tc superconducting films on (001) silicon surface
US5047385A (en) * 1988-07-20 1991-09-10 The Board Of Trustees Of The Leland Stanford Junior University Method of forming superconducting YBa2 Cu3 O7-x thin films with controlled crystal orientation
US5225031A (en) * 1991-04-10 1993-07-06 Martin Marietta Energy Systems, Inc. Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process
US5155658A (en) * 1992-03-05 1992-10-13 Bell Communications Research, Inc. Crystallographically aligned ferroelectric films usable in memories and method of crystallographically aligning perovskite films

Also Published As

Publication number Publication date
EP0327493A3 (en) 1989-09-27
EP0327493A2 (de) 1989-08-09
JPH0725640B2 (ja) 1995-03-22
EP0327493B1 (de) 1993-08-11
US5593951A (en) 1997-01-14
CA1336567C (en) 1995-08-08
JPH01197396A (ja) 1989-08-09
DE68908198T2 (de) 1994-03-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee