DE631649C - Trockengleichrichter - Google Patents

Trockengleichrichter

Info

Publication number
DE631649C
DE631649C DEN31575A DEN0031575A DE631649C DE 631649 C DE631649 C DE 631649C DE N31575 A DEN31575 A DE N31575A DE N0031575 A DEN0031575 A DE N0031575A DE 631649 C DE631649 C DE 631649C
Authority
DE
Germany
Prior art keywords
anode
group
dry rectifier
rectifier according
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DEN31575A
Other languages
German (de)
English (en)
Inventor
Jan Hendrik De Boer
Hendrik Emmens
Willem Christiaan Van Geel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE631649C publication Critical patent/DE631649C/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/16—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising cuprous oxide or cuprous iodide
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B42/00—Obtaining records using waves other than optical waves; Visualisation of such records by using optical means
    • G03B42/02—Obtaining records using waves other than optical waves; Visualisation of such records by using optical means using X-rays
    • G03B42/025—Positioning or masking the X-ray film cartridge in the radiographic apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/479—Application of electric currents or fields, e.g. for electroforming
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes For Compound Or Non-Metal Manufacture (AREA)
  • Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
  • Hybrid Cells (AREA)
  • Electrolytic Production Of Metals (AREA)
DEN31575A 1930-03-08 1931-02-14 Trockengleichrichter Expired DE631649C (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL50649A NL34153C (US07122603-20061017-C00045.png) 1930-03-08 1930-03-08

Publications (1)

Publication Number Publication Date
DE631649C true DE631649C (de) 1936-06-25

Family

ID=47996

Family Applications (1)

Application Number Title Priority Date Filing Date
DEN31575A Expired DE631649C (de) 1930-03-08 1931-02-14 Trockengleichrichter

Country Status (9)

Country Link
US (1) US1985118A (US07122603-20061017-C00045.png)
AT (1) AT128220B (US07122603-20061017-C00045.png)
BE (1) BE377298A (US07122603-20061017-C00045.png)
CH (1) CH155911A (US07122603-20061017-C00045.png)
DE (1) DE631649C (US07122603-20061017-C00045.png)
DK (1) DK45412C (US07122603-20061017-C00045.png)
FR (1) FR712098A (US07122603-20061017-C00045.png)
GB (1) GB361738A (US07122603-20061017-C00045.png)
NL (1) NL34153C (US07122603-20061017-C00045.png)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1010646B (de) * 1951-10-26 1957-06-19 Int Standard Electric Corp Trockengleichrichter
DE1042133B (de) * 1955-10-09 1958-10-30 Koji Yoshida Verfahren zur Herstellung von Titanoxyd-Gleichrichtern
DE1093911B (de) * 1957-06-03 1960-12-01 Sperry Rand Corp Verfahren zur Befestigung einer metallischen Kontakt-Elektrode an dem Koerper aus halbleitendem Material einer Halbleiteranordnung

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2749489A (en) * 1950-12-04 1956-06-05 Int Standard Electric Corp Dry contact rectifiers
US2749596A (en) * 1952-01-04 1956-06-12 Robert G Breckenridge Method of making titanium dioxide rectifiers
US2766508A (en) * 1952-05-22 1956-10-16 Gen Electric Blocking layer for titanium oxide rectifier
US2784639A (en) * 1953-05-04 1957-03-12 Eastman Kodak Co Titanium nitride coated optical element
US2874102A (en) * 1953-08-12 1959-02-17 Rca Corp Electrodes and methods of making same
US3198718A (en) * 1960-05-26 1965-08-03 Lockheed Aircraft Corp Method for making structurally integrated film resistor assembly
US3199999A (en) * 1961-03-23 1965-08-10 Hi Shear Corp Pigment of titanium having titanium oxide coating; electrolytic method of making pigment; and reflector and paint containing same
US3180807A (en) * 1961-10-23 1965-04-27 Lockheed Aircraft Corp Method for making film resistors

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1010646B (de) * 1951-10-26 1957-06-19 Int Standard Electric Corp Trockengleichrichter
DE1042133B (de) * 1955-10-09 1958-10-30 Koji Yoshida Verfahren zur Herstellung von Titanoxyd-Gleichrichtern
DE1093911B (de) * 1957-06-03 1960-12-01 Sperry Rand Corp Verfahren zur Befestigung einer metallischen Kontakt-Elektrode an dem Koerper aus halbleitendem Material einer Halbleiteranordnung

Also Published As

Publication number Publication date
DK45412C (da) 1932-03-21
NL34153C (US07122603-20061017-C00045.png) 1934-10-23
AT128220B (de) 1932-05-10
US1985118A (en) 1934-12-18
CH155911A (de) 1932-07-15
GB361738A (en) 1931-11-26
FR712098A (fr) 1931-09-24
BE377298A (US07122603-20061017-C00045.png) 1931-03-30

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