DE60327119D1 - Methode zur Herstellung einer Vorrichtung - Google Patents
Methode zur Herstellung einer VorrichtungInfo
- Publication number
- DE60327119D1 DE60327119D1 DE60327119T DE60327119T DE60327119D1 DE 60327119 D1 DE60327119 D1 DE 60327119D1 DE 60327119 T DE60327119 T DE 60327119T DE 60327119 T DE60327119 T DE 60327119T DE 60327119 D1 DE60327119 D1 DE 60327119D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. programme control
- H01J37/3023—Programme control
- H01J37/3026—Patterning strategy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3175—Lithography
- H01J2237/31761—Patterning strategy
- H01J2237/31764—Dividing into sub-patterns
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03078271A EP1524555B1 (de) | 2003-10-16 | 2003-10-16 | Lithographische Methode zur Herstellung einer Vorrichtung |
EP07116392A EP1860506B1 (de) | 2003-10-16 | 2003-10-16 | Methode zur Herstellung einer Vorrichtung |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60327119D1 true DE60327119D1 (de) | 2009-05-20 |
Family
ID=34354527
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60319087T Expired - Lifetime DE60319087T2 (de) | 2003-10-16 | 2003-10-16 | Lithographische Methode zur Herstellung einer Vorrichtung |
DE60327119T Expired - Lifetime DE60327119D1 (de) | 2003-10-16 | 2003-10-16 | Methode zur Herstellung einer Vorrichtung |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60319087T Expired - Lifetime DE60319087T2 (de) | 2003-10-16 | 2003-10-16 | Lithographische Methode zur Herstellung einer Vorrichtung |
Country Status (4)
Country | Link |
---|---|
US (1) | US7630060B2 (de) |
EP (2) | EP1524555B1 (de) |
JP (2) | JP4335777B2 (de) |
DE (2) | DE60319087T2 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2005106930A1 (ja) * | 2004-04-27 | 2008-03-21 | 株式会社ニコン | 露光方法、露光装置及びデバイス製造方法 |
US7666576B2 (en) * | 2006-06-07 | 2010-02-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Exposure scan and step direction optimization |
US8330936B2 (en) | 2006-09-20 | 2012-12-11 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8273523B2 (en) * | 2006-12-28 | 2012-09-25 | Texas Instruments Incorporated | By-die-exposure for patterning of holes in edge die |
US7854877B2 (en) | 2007-08-14 | 2010-12-21 | Asml Netherlands B.V. | Lithography meandering order |
TWI562319B (en) * | 2011-12-07 | 2016-12-11 | United Microelectronics Corp | Monitoring testkey used in semiconductor fabrication |
US9760027B2 (en) * | 2013-10-17 | 2017-09-12 | United Microelectronics Corp. | Scanner routing method for particle removal |
CN109661617B (zh) * | 2016-09-02 | 2021-07-30 | Asml荷兰有限公司 | 光刻设备 |
KR102511272B1 (ko) * | 2018-02-23 | 2023-03-16 | 삼성전자주식회사 | 노광 장치 및 이를 이용하는 반도체 장치의 제조 방법 |
NL2024322A (en) | 2018-12-19 | 2020-07-07 | Asml Netherlands Bv | Lithographic apparatus with thermal conditioning system for conditioning the wafer |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58107633A (ja) * | 1981-12-21 | 1983-06-27 | Canon Inc | 特殊チツプを逃げたシヨツト配列方法 |
JPH03237459A (ja) * | 1990-02-14 | 1991-10-23 | Fujitsu Ltd | 半導体ウエハの露光方法およびステップ露光用レチクル |
JP3079623B2 (ja) | 1991-03-28 | 2000-08-21 | ソニー株式会社 | ステップ式露光方法及びステップ式露光装置 |
US5617182A (en) * | 1993-11-22 | 1997-04-01 | Nikon Corporation | Scanning exposure method |
JPH07283109A (ja) * | 1994-04-07 | 1995-10-27 | Matsushita Electron Corp | 半導体装置の露光方法および露光装置 |
JPH07283106A (ja) * | 1994-04-07 | 1995-10-27 | Rohm Co Ltd | 露光装置及び露光方法 |
JPH08316134A (ja) * | 1995-05-24 | 1996-11-29 | Nikon Corp | 露光方法 |
CN1244021C (zh) * | 1996-11-28 | 2006-03-01 | 株式会社尼康 | 光刻装置和曝光方法 |
JPH10303126A (ja) * | 1997-02-28 | 1998-11-13 | Nikon Corp | 移動シーケンスの決定方法 |
JP3408106B2 (ja) * | 1997-03-26 | 2003-05-19 | キヤノン株式会社 | 露光装置およびデバイス製造方法 |
JP2000156336A (ja) * | 1998-11-20 | 2000-06-06 | Nikon Corp | アライメント方法及び露光装置 |
US6270947B2 (en) * | 1999-04-30 | 2001-08-07 | Infineon Technologies Ag | Method and apparatus for reducing non-uniformity area effects in the manufacture of semiconductor devices |
US6266144B1 (en) * | 1999-08-26 | 2001-07-24 | Taiwan Semiconductor Manufacturing Company | Stepper and scanner new exposure sequence with intra-field correction |
JP2001319872A (ja) | 2000-03-01 | 2001-11-16 | Nikon Corp | 露光装置 |
US6447964B2 (en) | 2000-03-01 | 2002-09-10 | Nikon Corporation | Charged-particle-beam microlithography methods including chip-exposure sequences for reducing thermally induced lateral shift of exposure position on the substrate |
JP2002334826A (ja) * | 2001-05-09 | 2002-11-22 | Canon Inc | 露光方法、面位置合わせ方法、露光装置及びデバイス製造方法 |
TW497138B (en) * | 2001-08-28 | 2002-08-01 | Winbond Electronics Corp | Method for improving consistency of critical dimension |
US6866974B2 (en) * | 2002-10-21 | 2005-03-15 | Texas Instruments Incorporated | Semiconductor process using delay-compensated exposure |
-
2003
- 2003-10-16 DE DE60319087T patent/DE60319087T2/de not_active Expired - Lifetime
- 2003-10-16 DE DE60327119T patent/DE60327119D1/de not_active Expired - Lifetime
- 2003-10-16 EP EP03078271A patent/EP1524555B1/de not_active Expired - Fee Related
- 2003-10-16 EP EP07116392A patent/EP1860506B1/de not_active Expired - Fee Related
-
2004
- 2004-10-13 US US10/962,744 patent/US7630060B2/en not_active Expired - Fee Related
- 2004-10-15 JP JP2004301690A patent/JP4335777B2/ja not_active Expired - Fee Related
-
2009
- 2009-04-03 JP JP2009090699A patent/JP4955028B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE60319087T2 (de) | 2009-02-05 |
US20080212053A1 (en) | 2008-09-04 |
JP4955028B2 (ja) | 2012-06-20 |
JP2005123627A (ja) | 2005-05-12 |
EP1860506B1 (de) | 2009-04-08 |
US7630060B2 (en) | 2009-12-08 |
EP1524555B1 (de) | 2008-02-13 |
DE60319087D1 (de) | 2008-03-27 |
EP1860506A1 (de) | 2007-11-28 |
EP1524555A1 (de) | 2005-04-20 |
JP4335777B2 (ja) | 2009-09-30 |
JP2009158971A (ja) | 2009-07-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |