DE60323744D1 - Flexible redundanz für speicher - Google Patents

Flexible redundanz für speicher

Info

Publication number
DE60323744D1
DE60323744D1 DE60323744T DE60323744T DE60323744D1 DE 60323744 D1 DE60323744 D1 DE 60323744D1 DE 60323744 T DE60323744 T DE 60323744T DE 60323744 T DE60323744 T DE 60323744T DE 60323744 D1 DE60323744 D1 DE 60323744D1
Authority
DE
Germany
Prior art keywords
storage
flexible redundancy
redundancy
flexible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60323744T
Other languages
English (en)
Inventor
Thomas Roehr
Norbert Rehm
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qimonda AG
Original Assignee
Qimonda AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qimonda AG filed Critical Qimonda AG
Application granted granted Critical
Publication of DE60323744D1 publication Critical patent/DE60323744D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
DE60323744T 2002-04-26 2003-04-17 Flexible redundanz für speicher Expired - Fee Related DE60323744D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/133,919 US6687171B2 (en) 2002-04-26 2002-04-26 Flexible redundancy for memories
PCT/EP2003/004078 WO2003092012A2 (en) 2002-04-26 2003-04-17 Flexible redundancy for memories

Publications (1)

Publication Number Publication Date
DE60323744D1 true DE60323744D1 (de) 2008-11-06

Family

ID=29249100

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60323744T Expired - Fee Related DE60323744D1 (de) 2002-04-26 2003-04-17 Flexible redundanz für speicher

Country Status (8)

Country Link
US (1) US6687171B2 (de)
EP (1) EP1500111B1 (de)
JP (1) JP2005524190A (de)
KR (1) KR100633426B1 (de)
CN (1) CN1650371A (de)
DE (1) DE60323744D1 (de)
TW (1) TWI226062B (de)
WO (1) WO2003092012A2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10157537C2 (de) * 2001-11-23 2003-09-18 Infineon Technologies Ag Integrierter Speicher und Verfahren zur Reparatur eines integrierten Speichers
KR100484254B1 (ko) * 2002-10-31 2005-04-22 주식회사 하이닉스반도체 반도체 메모리 장치의 리던던시 회로 및 그를 이용한 페일구제방법
JP2005182900A (ja) * 2003-12-18 2005-07-07 Sony Corp 半導体記憶装置
JP5019579B2 (ja) * 2007-01-18 2012-09-05 株式会社東芝 半導体記憶装置
JP2010146665A (ja) * 2008-12-19 2010-07-01 Toshiba Corp 抵抗変化型不揮発性半導体メモリ
KR102384864B1 (ko) 2017-11-03 2022-04-08 삼성전자주식회사 불량 스트링을 리페어하는 방법 및 불휘발성 메모리 장치
CN112837736A (zh) * 2021-03-16 2021-05-25 江苏时代全芯存储科技股份有限公司 记忆体装置以及其修补方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5446698A (en) * 1994-06-30 1995-08-29 Sgs-Thomson Microelectronics, Inc. Block decoded redundant master wordline
JP3710002B2 (ja) * 1995-08-23 2005-10-26 株式会社日立製作所 半導体記憶装置
JP3845889B2 (ja) * 1996-02-21 2006-11-15 ソニー株式会社 半導体記憶装置
US5808945A (en) * 1996-02-21 1998-09-15 Sony Corporation Semiconductor memory having redundant memory array
US5774471A (en) * 1996-12-17 1998-06-30 Integrated Silicon Solution Inc. Multiple location repair word line redundancy circuit
US6163489A (en) * 1999-07-16 2000-12-19 Micron Technology Inc. Semiconductor memory having multiple redundant columns with offset segmentation boundaries
US6249465B1 (en) * 2000-02-18 2001-06-19 Hewlett-Packard Company Redundancy programming using addressable scan paths to reduce the number of required fuses
US6314030B1 (en) * 2000-06-14 2001-11-06 Micron Technology, Inc. Semiconductor memory having segmented row repair

Also Published As

Publication number Publication date
EP1500111B1 (de) 2008-09-24
WO2003092012A2 (en) 2003-11-06
US20030202387A1 (en) 2003-10-30
EP1500111A2 (de) 2005-01-26
TWI226062B (en) 2005-01-01
KR20040102154A (ko) 2004-12-03
TW200307288A (en) 2003-12-01
CN1650371A (zh) 2005-08-03
US6687171B2 (en) 2004-02-03
WO2003092012A3 (en) 2004-02-05
JP2005524190A (ja) 2005-08-11
KR100633426B1 (ko) 2006-10-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee