DE60318512D1 - Fotoelektrisches Konversionselement und fotoelektrische Vorrichtung - Google Patents

Fotoelektrisches Konversionselement und fotoelektrische Vorrichtung

Info

Publication number
DE60318512D1
DE60318512D1 DE60318512T DE60318512T DE60318512D1 DE 60318512 D1 DE60318512 D1 DE 60318512D1 DE 60318512 T DE60318512 T DE 60318512T DE 60318512 T DE60318512 T DE 60318512T DE 60318512 D1 DE60318512 D1 DE 60318512D1
Authority
DE
Germany
Prior art keywords
photoelectric
conversion element
photoelectric conversion
photoelectric device
conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60318512T
Other languages
English (en)
Other versions
DE60318512T2 (de
Inventor
Hiroyuki Watanabe
Kazunori Anazawa
Chikara Manabe
Masaaki Shimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Business Innovation Corp
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Xerox Co Ltd filed Critical Fuji Xerox Co Ltd
Publication of DE60318512D1 publication Critical patent/DE60318512D1/de
Application granted granted Critical
Publication of DE60318512T2 publication Critical patent/DE60318512T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221Carbon nanotubes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
DE60318512T 2002-04-09 2003-04-09 Fotoelektrisches Konversionselement und fotoelektrische Vorrichtung Expired - Lifetime DE60318512T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002106809A JP4051988B2 (ja) 2002-04-09 2002-04-09 光電変換素子および光電変換装置
JP2002106809 2002-04-09

Publications (2)

Publication Number Publication Date
DE60318512D1 true DE60318512D1 (de) 2008-02-21
DE60318512T2 DE60318512T2 (de) 2008-05-21

Family

ID=28449928

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60318512T Expired - Lifetime DE60318512T2 (de) 2002-04-09 2003-04-09 Fotoelektrisches Konversionselement und fotoelektrische Vorrichtung

Country Status (4)

Country Link
US (1) US6724064B2 (de)
EP (1) EP1353387B1 (de)
JP (1) JP4051988B2 (de)
DE (1) DE60318512T2 (de)

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* Cited by examiner, † Cited by third party
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US7673521B2 (en) * 2002-12-09 2010-03-09 Rensselaer Polytechnic Institute Embedded nanotube array sensor and method of making a nanotube polymer composite
US20050195318A1 (en) * 2003-02-07 2005-09-08 Takahiro Komatsu Organic information reading unit and information reading device using the same
JP4096877B2 (ja) * 2003-02-07 2008-06-04 松下電器産業株式会社 情報読み取り素子及びそれを用いた情報読み取り装置
US7091506B2 (en) * 2003-04-21 2006-08-15 Rensselaer Polytech Inst Semiconductor surface-field emitter for T-ray generation
JP2005032793A (ja) * 2003-07-08 2005-02-03 Matsushita Electric Ind Co Ltd 有機光電変換素子
JP2005032852A (ja) * 2003-07-09 2005-02-03 Matsushita Electric Ind Co Ltd 有機光電変換素子
WO2005008787A1 (ja) * 2003-07-18 2005-01-27 Japan Science And Technology Agency 光検出素子
JP4239848B2 (ja) * 2004-02-16 2009-03-18 富士ゼロックス株式会社 マイクロ波用アンテナおよびその製造方法
WO2005096403A2 (en) * 2004-03-31 2005-10-13 Matsushita Electric Industrial Co., Ltd. Organic photoelectric conversion element utilizing an inorganic buffer layer placed between an electrode and the active material
TWI380342B (en) * 2004-06-01 2012-12-21 Nikon Corp Method for fabricating an electronic device and electronic device
US7129467B2 (en) * 2004-09-10 2006-10-31 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Carbon nanotube based light sensor
US20080204966A1 (en) * 2004-09-21 2008-08-28 The Johns Hopkins University Controlled Transport and Assembly of Nanostructures
US20070240757A1 (en) * 2004-10-15 2007-10-18 The Trustees Of Boston College Solar cells using arrays of optical rectennas
CN100375297C (zh) * 2004-12-27 2008-03-12 中国科学院化学研究所 光强度调节的场效应晶体管及其制备方法
JP4752283B2 (ja) * 2005-02-24 2011-08-17 富士ゼロックス株式会社 カーボンナノチューブを用いた太陽電池
US7645933B2 (en) * 2005-03-02 2010-01-12 Wisconsin Alumni Research Foundation Carbon nanotube Schottky barrier photovoltaic cell
WO2007002297A2 (en) * 2005-06-24 2007-01-04 Crafts Douglas E Temporary planar electrical contact device and method using vertically-compressible nanotube contact structures
WO2007086903A2 (en) * 2005-08-24 2007-08-02 The Trustees Of Boston College Apparatus and methods for solar energy conversion using nanocoax structures
JP2009506546A (ja) * 2005-08-24 2009-02-12 ザ トラスティーズ オブ ボストン カレッジ ナノスケール共金属構造を用いた太陽エネルギー変換のための装置および方法
WO2007025023A2 (en) * 2005-08-24 2007-03-01 The Trustees Of Boston College Apparatus and methods for optical switching using nanoscale optics
US7589880B2 (en) * 2005-08-24 2009-09-15 The Trustees Of Boston College Apparatus and methods for manipulating light using nanoscale cometal structures
US7623746B2 (en) * 2005-08-24 2009-11-24 The Trustees Of Boston College Nanoscale optical microscope
US7985615B2 (en) * 2005-11-21 2011-07-26 The Regents Of The University Of California Method of forming a carbon nanotube/nanowire thermo-photovoltaic cell
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JP4825697B2 (ja) * 2007-01-25 2011-11-30 株式会社ミツトヨ デジタル式変位測定器
EP2115782A1 (de) * 2007-01-30 2009-11-11 Solasta, Inc. Photovoltaische zelle und verfahren zu ihrer herstellung
KR20090120474A (ko) * 2007-02-12 2009-11-24 솔라스타, 인코포레이티드 고온 캐리어 냉각이 감소된 광전지 셀
KR100881012B1 (ko) * 2007-05-23 2009-01-30 주식회사 동부하이텍 이미지센서 및 그 제조방법
CN101779296B (zh) * 2007-07-03 2012-03-21 索拉斯特公司 分布式同轴光伏装置
CN101458595B (zh) 2007-12-12 2011-06-08 清华大学 触摸屏及显示装置
CN101458594B (zh) 2007-12-12 2012-07-18 清华大学 触摸屏及显示装置
CN101464763B (zh) 2007-12-21 2010-09-29 清华大学 触摸屏的制备方法
CN101620454A (zh) * 2008-07-04 2010-01-06 清华大学 便携式电脑
CN101470566B (zh) 2007-12-27 2011-06-08 清华大学 触摸式控制装置
CN101458604B (zh) 2007-12-12 2012-03-28 清华大学 触摸屏及显示装置
CN101458597B (zh) 2007-12-14 2011-06-08 清华大学 触摸屏、触摸屏的制备方法及使用该触摸屏的显示装置
CN101655720B (zh) 2008-08-22 2012-07-18 清华大学 个人数字助理
CN101458608B (zh) 2007-12-14 2011-09-28 清华大学 触摸屏的制备方法
CN101656769B (zh) 2008-08-22 2012-10-10 清华大学 移动电话
CN101470559B (zh) 2007-12-27 2012-11-21 清华大学 触摸屏及显示装置
CN101419518B (zh) 2007-10-23 2012-06-20 清华大学 触摸屏
CN101458598B (zh) 2007-12-14 2011-06-08 清华大学 触摸屏及显示装置
CN101458600B (zh) 2007-12-14 2011-11-30 清华大学 触摸屏及显示装置
CN101458603B (zh) 2007-12-12 2011-06-08 北京富纳特创新科技有限公司 触摸屏及显示装置
CN101458606B (zh) 2007-12-12 2012-06-20 清华大学 触摸屏、触摸屏的制备方法及使用该触摸屏的显示装置
CN101470558B (zh) 2007-12-27 2012-11-21 清华大学 触摸屏及显示装置
CN101676832B (zh) * 2008-09-19 2012-03-28 清华大学 台式电脑
CN101458593B (zh) 2007-12-12 2012-03-14 清华大学 触摸屏及显示装置
CN101419519B (zh) 2007-10-23 2012-06-20 清华大学 触摸屏
CN101458602B (zh) 2007-12-12 2011-12-21 清华大学 触摸屏及显示装置
CN101458609B (zh) 2007-12-14 2011-11-09 清华大学 触摸屏及显示装置
CN101458599B (zh) 2007-12-14 2011-06-08 清华大学 触摸屏、触摸屏的制备方法及使用该触摸屏的显示装置
CN101458975B (zh) 2007-12-12 2012-05-16 清华大学 电子元件
CN101458601B (zh) 2007-12-14 2012-03-14 清华大学 触摸屏及显示装置
CN101458607B (zh) 2007-12-14 2010-12-29 清华大学 触摸屏及显示装置
CN101464757A (zh) 2007-12-21 2009-06-24 清华大学 触摸屏及显示装置
CN101464765B (zh) 2007-12-21 2011-01-05 鸿富锦精密工业(深圳)有限公司 触摸屏及显示装置
US8574393B2 (en) 2007-12-21 2013-11-05 Tsinghua University Method for making touch panel
CN101464764B (zh) 2007-12-21 2012-07-18 清华大学 触摸屏及显示装置
CN101470565B (zh) 2007-12-27 2011-08-24 清华大学 触摸屏及显示装置
KR100930997B1 (ko) 2008-01-22 2009-12-10 한국화학연구원 탄소나노튜브 트랜지스터 제조 방법 및 그에 의한탄소나노튜브 트랜지스터
US20090301560A1 (en) * 2008-06-05 2009-12-10 Sanyo Electric Co., Ltd. Photovoltaic element, photovoltaic module and method of manufacturing photovoltaic element
US8237677B2 (en) 2008-07-04 2012-08-07 Tsinghua University Liquid crystal display screen
US8390580B2 (en) 2008-07-09 2013-03-05 Tsinghua University Touch panel, liquid crystal display screen using the same, and methods for making the touch panel and the liquid crystal display screen
EP2321854A2 (de) 2008-07-25 2011-05-18 Ramot at Tel-Aviv University Ltd. Gleichrichtende antennenanordnung mit nanostrukturdiode
KR101003860B1 (ko) 2008-08-29 2010-12-30 재단법인서울대학교산학협력재단 나노 스케일 레벨링 트랜스듀서
TWI481922B (zh) * 2008-09-05 2015-04-21 Hon Hai Prec Ind Co Ltd 個人數位助理
CN101924816B (zh) 2009-06-12 2013-03-20 清华大学 柔性手机
US9083278B2 (en) 2010-07-05 2015-07-14 Stmicroelectronics S.R.L. Device for transforming electromagnetic IR energy from spatially incoherent, low-power density, broad-band radiation in spatially coherent, high-power density, quasi-monochromatic radiation
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JP5607280B1 (ja) * 2013-03-18 2014-10-15 パナソニック株式会社 テラヘルツ電磁波発生装置、テラヘルツ分光装置、およびテラヘルツ電磁波の発生方法
JP6299958B2 (ja) * 2014-01-30 2018-03-28 セイコーエプソン株式会社 光伝導アンテナ、カメラ、イメージング装置、および計測装置
RU2576353C1 (ru) * 2014-11-05 2016-02-27 Федеральное государственное бюджетное учреждение науки Институт нанотехнологий микроэлектроники Российской академии наук Чувствительный элемент оптического датчика
WO2017006520A1 (ja) * 2015-07-08 2017-01-12 パナソニックIpマネジメント株式会社 撮像装置
WO2017171736A1 (en) * 2016-03-30 2017-10-05 Intel Corporation Nanowire for transistor integration
JP7090400B2 (ja) 2017-03-08 2022-06-24 浜松ホトニクス株式会社 半導体光検出素子
CN107231745A (zh) * 2017-06-08 2017-10-03 鹤山市中富兴业电路有限公司 一种用于医疗检测所用的pcb板及其制作方法

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WO2001003208A1 (en) * 1999-07-02 2001-01-11 President And Fellows Of Harvard College Nanoscopic wire-based devices, arrays, and methods of their manufacture
AU2002307008C1 (en) * 2001-03-30 2008-10-30 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
US7385262B2 (en) * 2001-11-27 2008-06-10 The Board Of Trustees Of The Leland Stanford Junior University Band-structure modulation of nano-structures in an electric field

Also Published As

Publication number Publication date
EP1353387B1 (de) 2008-01-09
EP1353387A3 (de) 2004-04-14
EP1353387A2 (de) 2003-10-15
JP2003303978A (ja) 2003-10-24
US20030189235A1 (en) 2003-10-09
US6724064B2 (en) 2004-04-20
DE60318512T2 (de) 2008-05-21
JP4051988B2 (ja) 2008-02-27

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