DE60315177D1 - Antireflexbeschichtungen und dual-damascene-füllzusammensetzungen, enthaltend styrol-allylalkohol-copolymere - Google Patents

Antireflexbeschichtungen und dual-damascene-füllzusammensetzungen, enthaltend styrol-allylalkohol-copolymere

Info

Publication number
DE60315177D1
DE60315177D1 DE60315177T DE60315177T DE60315177D1 DE 60315177 D1 DE60315177 D1 DE 60315177D1 DE 60315177 T DE60315177 T DE 60315177T DE 60315177 T DE60315177 T DE 60315177T DE 60315177 D1 DE60315177 D1 DE 60315177D1
Authority
DE
Germany
Prior art keywords
allyl alcohol
dual damascene
compositions
alcohol copolymers
containing styrene
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60315177T
Other languages
English (en)
Other versions
DE60315177T2 (de
Inventor
Gu Xu
Jimmy D Meador
Mander R Behave
Shreeram V Deshpande
Kelly A Nowak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Brewer Science Inc
Original Assignee
Brewer Science Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Brewer Science Inc filed Critical Brewer Science Inc
Application granted granted Critical
Publication of DE60315177D1 publication Critical patent/DE60315177D1/de
Publication of DE60315177T2 publication Critical patent/DE60315177T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76808—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving intermediate temporary filling with material
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/111—Anti-reflection coatings using layers comprising organic materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/136—Coating process making radiation sensitive element
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/151—Matting or other surface reflectivity altering material

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Paints Or Removers (AREA)
  • Drying Of Semiconductors (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Surface Treatment Of Optical Elements (AREA)
DE60315177T 2002-05-23 2003-05-13 Antireflexbeschichtungen und dual-damascene-füllzusammensetzungen, enthaltend styrol-allylalkohol-copolymere Expired - Lifetime DE60315177T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US154338 1988-02-10
US10/154,338 US6894104B2 (en) 2002-05-23 2002-05-23 Anti-reflective coatings and dual damascene fill compositions comprising styrene-allyl alcohol copolymers
PCT/US2003/015164 WO2004040369A2 (en) 2002-05-23 2003-05-13 Anti-reflective coatings and dual damascene fill compositions comprising styrene-allyl alcohol copolymers

Publications (2)

Publication Number Publication Date
DE60315177D1 true DE60315177D1 (de) 2007-09-06
DE60315177T2 DE60315177T2 (de) 2008-04-10

Family

ID=29548852

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60315177T Expired - Lifetime DE60315177T2 (de) 2002-05-23 2003-05-13 Antireflexbeschichtungen und dual-damascene-füllzusammensetzungen, enthaltend styrol-allylalkohol-copolymere

Country Status (10)

Country Link
US (2) US6894104B2 (de)
EP (1) EP1554322B1 (de)
JP (1) JP4489593B2 (de)
KR (1) KR101036408B1 (de)
CN (1) CN1310971C (de)
AT (1) ATE368060T1 (de)
AU (1) AU2003300771A1 (de)
DE (1) DE60315177T2 (de)
TW (1) TWI297711B (de)
WO (1) WO2004040369A2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004101794A (ja) * 2002-09-09 2004-04-02 Toray Ind Inc 半導体装置用平坦化組成物
US7691556B2 (en) * 2004-09-15 2010-04-06 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists
JP2006128543A (ja) * 2004-11-01 2006-05-18 Nec Electronics Corp 電子デバイスの製造方法
JP4832955B2 (ja) * 2005-06-07 2011-12-07 信越化学工業株式会社 レジスト下層膜材料並びにそれを用いたパターン形成方法
US7553905B2 (en) * 2005-10-31 2009-06-30 Az Electronic Materials Usa Corp. Anti-reflective coatings
US20070142525A1 (en) * 2005-12-16 2007-06-21 Rogado Nyrissa S Low TCR polymeric resistors based on reduced metal oxide conductive phase systems
EP1829942B1 (de) * 2006-02-28 2012-09-26 Rohm and Haas Electronic Materials, L.L.C. Beschichtungszusammensetzungen zur Verwendung mit einem beschichteten Fotolack
US20090035704A1 (en) * 2007-08-03 2009-02-05 Hong Zhuang Underlayer Coating Composition Based on a Crosslinkable Polymer
US20090042133A1 (en) * 2007-08-10 2009-02-12 Zhong Xiang Antireflective Coating Composition
US8192642B2 (en) * 2007-09-13 2012-06-05 Brewer Science Inc. Spin-on protective coatings for wet-etch processing of microelectronic substrates
US8039201B2 (en) * 2007-11-21 2011-10-18 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
EP2288397B1 (de) 2008-04-01 2019-03-13 Gambro Lundia AB Gerät und verfahren zur überwachung eines gefässzugangs
US20090253081A1 (en) * 2008-04-02 2009-10-08 David Abdallah Process for Shrinking Dimensions Between Photoresist Pattern Comprising a Pattern Hardening Step
US20090253080A1 (en) * 2008-04-02 2009-10-08 Dammel Ralph R Photoresist Image-Forming Process Using Double Patterning
US20100015550A1 (en) * 2008-07-17 2010-01-21 Weihong Liu Dual damascene via filling composition
US20100040838A1 (en) * 2008-08-15 2010-02-18 Abdallah David J Hardmask Process for Forming a Reverse Tone Image
US8084186B2 (en) * 2009-02-10 2011-12-27 Az Electronic Materials Usa Corp. Hardmask process for forming a reverse tone image using polysilazane
JP6043693B2 (ja) * 2012-10-19 2016-12-14 富士フイルム株式会社 保護膜形成用の樹脂組成物、保護膜、パターン形成方法、電子デバイスの製造方法及び電子デバイス

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3407155A (en) * 1965-10-29 1968-10-22 American Cyanamid Co Aminotriazine decorative, dimensionally stable molding compound containing a polymerized aromatic monomer and hydroxyl-containing vinyl monomers copolymer
US3454418A (en) * 1967-04-17 1969-07-08 Lubrizol Corp Coating compositions containing styrene-allyl alcohol copolymer,epoxy resin,and phenol formaldehyde
US4090936A (en) * 1976-10-28 1978-05-23 Minnesota Mining And Manufacturing Company Photohardenable compositions
US4921891A (en) * 1986-12-10 1990-05-01 Di Giorgio Corporation Wood coating composition and process of use thereof
US5089313A (en) * 1986-12-10 1992-02-18 Marley Mouldings Inc. Process for coating metal and plastic to impart wood-like appearances
US4808652A (en) * 1988-06-08 1989-02-28 Monsanto Company Crosslinker compositions comprising amino resins, epoxies and styrene allyl alcohol copolymers
EP0357582A3 (de) 1988-06-08 1991-05-29 Monsanto Company Zusammensetzung, bestehend aus Aminoharzen, Epoxidharzen und Styrol-Allylalkohol-Copolymeren
US5157080A (en) 1990-05-15 1992-10-20 Monsanto Company Coating composition
US5275909A (en) * 1992-06-01 1994-01-04 Ocg Microelectronic Materials, Inc. Positive-working radiation sensitive mixtures and articles containing alkali-soluble binder, o-quinonediazide photoactive compound and BLANKOPHOR FBW acting dye
JPH09236915A (ja) 1995-12-27 1997-09-09 Mitsubishi Chem Corp 反射防止組成物及びレジストパターン形成方法
JP3781471B2 (ja) 1996-03-13 2006-05-31 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 反射防止組成物及びこれを用いる感光膜の形成方法
US20020102483A1 (en) * 1998-09-15 2002-08-01 Timothy Adams Antireflective coating compositions
US6114085A (en) 1998-11-18 2000-09-05 Clariant Finance (Bvi) Limited Antireflective composition for a deep ultraviolet photoresist
US6323287B1 (en) * 1999-03-12 2001-11-27 Arch Specialty Chemicals, Inc. Hydroxy-amino thermally cured undercoat for 193 NM lithography
US6492092B1 (en) 1999-03-12 2002-12-10 Arch Specialty Chemicals, Inc. Hydroxy-epoxide thermally cured undercoat for 193 NM lithography
US6482751B2 (en) 1999-04-01 2002-11-19 Winbond Electronics Corp. Titanium dioxide layer serving as a mask and its removed method
US6890448B2 (en) 1999-06-11 2005-05-10 Shipley Company, L.L.C. Antireflective hard mask compositions
US6187506B1 (en) * 1999-08-05 2001-02-13 Clariant Finance (Bvi) Limited Antireflective coating for photoresist compositions
TW556047B (en) 2000-07-31 2003-10-01 Shipley Co Llc Coated substrate, method for forming photoresist relief image, and antireflective composition

Also Published As

Publication number Publication date
CN1310971C (zh) 2007-04-18
JP4489593B2 (ja) 2010-06-23
AU2003300771A8 (en) 2004-05-25
EP1554322A4 (de) 2005-10-05
WO2004040369A2 (en) 2004-05-13
DE60315177T2 (de) 2008-04-10
KR20050013995A (ko) 2005-02-05
ATE368060T1 (de) 2007-08-15
TW200426186A (en) 2004-12-01
CN1656132A (zh) 2005-08-17
USRE40920E1 (en) 2009-09-22
KR101036408B1 (ko) 2011-05-23
JP2006504995A (ja) 2006-02-09
AU2003300771A1 (en) 2004-05-25
EP1554322A2 (de) 2005-07-20
TWI297711B (en) 2008-06-11
WO2004040369A3 (en) 2004-07-08
EP1554322B1 (de) 2007-07-25
US6894104B2 (en) 2005-05-17
US20030220431A1 (en) 2003-11-27

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