DE60313140D1 - Quanten-nanozusammensetzungshalbleiterlaser und quanten-nanozusammensetzungsarray - Google Patents
Quanten-nanozusammensetzungshalbleiterlaser und quanten-nanozusammensetzungsarrayInfo
- Publication number
- DE60313140D1 DE60313140D1 DE60313140T DE60313140T DE60313140D1 DE 60313140 D1 DE60313140 D1 DE 60313140D1 DE 60313140 T DE60313140 T DE 60313140T DE 60313140 T DE60313140 T DE 60313140T DE 60313140 D1 DE60313140 D1 DE 60313140D1
- Authority
- DE
- Germany
- Prior art keywords
- nano composition
- quantum nano
- semiconductor laser
- array
- quantum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- VLCQZHSMCYCDJL-UHFFFAOYSA-N tribenuron methyl Chemical compound COC(=O)C1=CC=CC=C1S(=O)(=O)NC(=O)N(C)C1=NC(C)=NC(OC)=N1 VLCQZHSMCYCDJL-UHFFFAOYSA-N 0.000 title 2
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02392—Phosphides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
- H01L21/0243—Surface structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/122—Single quantum well structures
- H01L29/127—Quantum box structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1237—Lateral grating, i.e. grating only adjacent ridge or mesa
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
- H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002051548 | 2002-02-27 | ||
JP2002051548 | 2002-02-27 | ||
PCT/JP2003/001975 WO2003073570A1 (en) | 2002-02-27 | 2003-02-24 | Quantum nano-composite semiconductor laser and quantum nano-composite array |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60313140D1 true DE60313140D1 (de) | 2007-05-24 |
DE60313140T2 DE60313140T2 (de) | 2007-07-19 |
Family
ID=27764312
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60313140T Expired - Lifetime DE60313140T2 (de) | 2002-02-27 | 2003-02-24 | Quanten-nanozusammensetzungshalbleiterlaser und quanten-nanozusammensetzungsarray |
Country Status (7)
Country | Link |
---|---|
US (1) | US7463661B2 (de) |
EP (1) | EP1480304B1 (de) |
JP (1) | JP4345483B2 (de) |
KR (1) | KR100967977B1 (de) |
CA (1) | CA2477610C (de) |
DE (1) | DE60313140T2 (de) |
WO (1) | WO2003073570A1 (de) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005112210A1 (en) * | 2004-05-14 | 2005-11-24 | Bookham Technology Plc | Semiconductor devices including gratings formed using quantum dots and method of manufacture |
JP4613304B2 (ja) * | 2004-09-07 | 2011-01-19 | 独立行政法人産業技術総合研究所 | 量子ナノ構造半導体レーザ |
US20060120428A1 (en) * | 2004-12-08 | 2006-06-08 | Dae Kon Oh | Distributed feedback (DFB) semiconductor laser and fabrication method thereof |
KR100794653B1 (ko) * | 2005-12-06 | 2008-01-14 | 한국전자통신연구원 | 분포궤환형 양자점 반도체 레이저 구조물 |
US20080009844A1 (en) * | 2006-06-26 | 2008-01-10 | Ingeborg Rolle | Device for Laser Surgery |
JP2010258088A (ja) * | 2009-04-22 | 2010-11-11 | Qd Laser Inc | レーザシステム |
US8076217B2 (en) | 2009-05-04 | 2011-12-13 | Empire Technology Development Llc | Controlled quantum dot growth |
JP2011044539A (ja) * | 2009-08-20 | 2011-03-03 | Qd Laser Inc | 半導体レーザ及びその製造方法、光モジュール、光伝送システム |
US9057891B2 (en) * | 2009-09-11 | 2015-06-16 | The United States Of America, As Represented By The Secretary Of The Navy | Nonlinear frequency conversion in nanoslab optical waveguides |
EP2561322B1 (de) | 2010-04-20 | 2021-08-04 | Hewlett-Packard Development Company, L.P. | Selbstanordnende, lumineszenzverbessernde vorrichtung für oberflächenverstärkte lumineszenz |
US9001324B2 (en) | 2010-07-30 | 2015-04-07 | Hewlett-Packard Development Company, L.P. | Optical fiber surface enhanced raman spectroscopy (SERS) probe |
WO2012075461A1 (en) * | 2010-12-02 | 2012-06-07 | Nanocrystal Corporation | Defect-free group iii - nitride nanostructures and devices based on repetitive multiple step growth-etch sequence |
US8593629B2 (en) * | 2011-02-17 | 2013-11-26 | Hewlett-Packard Development Company, L.P. | Apparatus for performing SERS |
US9377409B2 (en) | 2011-07-29 | 2016-06-28 | Hewlett-Packard Development Company, L.P. | Fabricating an apparatus for use in a sensing application |
CN102684068B (zh) * | 2012-05-28 | 2014-04-23 | 西安交通大学 | 一种基于纳米线阵列的可调谐激光器及其制备工艺 |
WO2015104836A1 (ja) * | 2014-01-10 | 2015-07-16 | 富士通株式会社 | 光半導体素子及びその製造方法 |
DE102014106209B3 (de) | 2014-05-05 | 2015-08-27 | Nanoplus Nanosystems And Technologies Gmbh | Interbandkaskadenlaser sowie Verfahren zur Herstellung eines Interbandkaskadenlasers umfassend ein Rückkopplungselement |
JP6245419B1 (ja) * | 2017-04-04 | 2017-12-13 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4302729A (en) * | 1979-05-15 | 1981-11-24 | Xerox Corporation | Channeled substrate laser with distributed feedback |
JPS5948975A (ja) * | 1982-09-14 | 1984-03-21 | Nec Corp | 半導体発光素子 |
DE69027368T2 (de) * | 1989-06-30 | 1997-01-30 | Optical Measurement Technology | Halbleiterlaser und Verfahren zur Herstellung desselben |
JPH07109928B2 (ja) * | 1989-06-30 | 1995-11-22 | 光計測技術開発株式会社 | 半導体レーザ装置およびその製造方法 |
JP2957198B2 (ja) * | 1989-07-18 | 1999-10-04 | 光計測技術開発株式会社 | 半導体レーザ装置 |
JPH05145169A (ja) * | 1990-09-05 | 1993-06-11 | Hikari Keisoku Gijutsu Kaihatsu Kk | 半導体分布帰還型レーザ装置 |
US5114877A (en) * | 1991-01-08 | 1992-05-19 | Xerox Corporation | Method of fabricating quantum wire semiconductor laser via photo induced evaporation enhancement during in situ epitaxial growth |
EP0553994A1 (de) * | 1992-01-29 | 1993-08-04 | AT&T Corp. | Kompakte Quelle für optische Pulse |
US5305336A (en) * | 1992-01-29 | 1994-04-19 | At&T Bell Laboratories | Compact optical pulse source |
US5449247A (en) * | 1992-08-27 | 1995-09-12 | Smith; Delbert G. | Boat mooring station |
JP2767676B2 (ja) * | 1993-03-19 | 1998-06-18 | 松下電器産業株式会社 | 化合物半導体の微細構造形成方法 |
US5529952A (en) * | 1994-09-20 | 1996-06-25 | Texas Instruments Incorporated | Method of fabricating lateral resonant tunneling structure |
US5749313A (en) * | 1996-02-06 | 1998-05-12 | Shackelford, Jr.; Francis H. | Watercraft lift |
US5917194A (en) * | 1996-07-17 | 1999-06-29 | The United States Of America As Represented By The Secretary Of The Army | Mesoscopic electronic devices with tailored energy loss scattering |
US5888019A (en) * | 1997-08-25 | 1999-03-30 | Quastad; Donald D. | Walking hoist |
CA2249053A1 (en) * | 1997-09-30 | 1999-03-30 | Mitsui Chemicals, Incorporated | Semiconductor laser device |
JP3875799B2 (ja) * | 1997-09-30 | 2007-01-31 | 三井化学株式会社 | 半導体レーザ装置 |
JP4375834B2 (ja) * | 1998-03-19 | 2009-12-02 | シャープ株式会社 | 利得結合型分布帰還半導体レーザ装置及びその製造方法 |
JPH11330619A (ja) * | 1998-05-18 | 1999-11-30 | Nippon Telegr & Teleph Corp <Ntt> | 光デバイス |
JP2000124441A (ja) * | 1998-10-13 | 2000-04-28 | Fujitsu Ltd | 半導体量子ドット素子の作製方法 |
JP3338869B2 (ja) * | 1999-06-09 | 2002-10-28 | 独立行政法人産業技術総合研究所 | 分散補償ミラーの屈折率分布最適化方法、及びこれに基づき作製された分散補償ミラーとその応用装置 |
JP4008180B2 (ja) * | 2000-03-29 | 2007-11-14 | パイオニア株式会社 | 分布帰還リッジ型半導体レーザ |
JP3849115B2 (ja) * | 2000-05-15 | 2006-11-22 | 富士通株式会社 | 半導体レーザ装置 |
JP3536978B2 (ja) | 2000-12-27 | 2004-06-14 | 独立行政法人産業技術総合研究所 | 量子細線または量子井戸層の形成方法、及び該形成方法により形成された量子細線または量子井戸層を用いた分布帰還半導体レーザ |
-
2003
- 2003-02-24 EP EP03707006A patent/EP1480304B1/de not_active Expired - Fee Related
- 2003-02-24 WO PCT/JP2003/001975 patent/WO2003073570A1/ja active IP Right Grant
- 2003-02-24 JP JP2003572142A patent/JP4345483B2/ja not_active Expired - Lifetime
- 2003-02-24 CA CA2477610A patent/CA2477610C/en not_active Expired - Fee Related
- 2003-02-24 KR KR1020047013359A patent/KR100967977B1/ko not_active IP Right Cessation
- 2003-02-24 DE DE60313140T patent/DE60313140T2/de not_active Expired - Lifetime
- 2003-02-24 US US10/505,770 patent/US7463661B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1480304B1 (de) | 2007-04-11 |
US7463661B2 (en) | 2008-12-09 |
DE60313140T2 (de) | 2007-07-19 |
EP1480304A1 (de) | 2004-11-24 |
EP1480304A4 (de) | 2005-12-28 |
KR20040102018A (ko) | 2004-12-03 |
JP4345483B2 (ja) | 2009-10-14 |
WO2003073570A1 (en) | 2003-09-04 |
CA2477610A1 (en) | 2003-09-04 |
CA2477610C (en) | 2010-12-07 |
US20060056472A1 (en) | 2006-03-16 |
KR100967977B1 (ko) | 2010-07-07 |
JPWO2003073570A1 (ja) | 2005-06-23 |
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