DE60310068D1 - Verfahren und vorrichtung zur abstimmbaren wellenlängenwandlung mittels eines bragg-gitters und laser in einem halbleitersubstrat - Google Patents

Verfahren und vorrichtung zur abstimmbaren wellenlängenwandlung mittels eines bragg-gitters und laser in einem halbleitersubstrat

Info

Publication number
DE60310068D1
DE60310068D1 DE60310068T DE60310068T DE60310068D1 DE 60310068 D1 DE60310068 D1 DE 60310068D1 DE 60310068 T DE60310068 T DE 60310068T DE 60310068 T DE60310068 T DE 60310068T DE 60310068 D1 DE60310068 D1 DE 60310068D1
Authority
DE
Germany
Prior art keywords
wavelength
optical signal
semiconductor substrate
laser
modulated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60310068T
Other languages
English (en)
Other versions
DE60310068T2 (de
Inventor
Ansheng Liu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of DE60310068D1 publication Critical patent/DE60310068D1/de
Application granted granted Critical
Publication of DE60310068T2 publication Critical patent/DE60310068T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5054—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 in which the wavelength is transformed by non-linear properties of the active medium, e.g. four wave mixing

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
DE60310068T 2002-06-13 2003-05-15 Verfahren und vorrichtung zur abstimmbaren wellenlängenwandlung mittels eines bragg-gitters und laser in einem halbleitersubstrat Expired - Lifetime DE60310068T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US171731 1988-04-05
US10/171,731 US6788727B2 (en) 2002-06-13 2002-06-13 Method and apparatus for tunable wavelength conversion using a bragg grating and a laser in a semiconductor substrate
PCT/US2003/015420 WO2003107498A1 (en) 2002-06-13 2003-05-15 Method and apparatus for tunable wavelength conversion using a bragg grating and a laser in a semiconductor substrate

Publications (2)

Publication Number Publication Date
DE60310068D1 true DE60310068D1 (de) 2007-01-11
DE60310068T2 DE60310068T2 (de) 2007-07-05

Family

ID=29732842

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60310068T Expired - Lifetime DE60310068T2 (de) 2002-06-13 2003-05-15 Verfahren und vorrichtung zur abstimmbaren wellenlängenwandlung mittels eines bragg-gitters und laser in einem halbleitersubstrat

Country Status (9)

Country Link
US (1) US6788727B2 (de)
EP (1) EP1512205B1 (de)
JP (1) JP4299240B2 (de)
CN (1) CN100344034C (de)
AT (1) ATE347186T1 (de)
AU (1) AU2003234614A1 (de)
DE (1) DE60310068T2 (de)
TW (1) TWI242657B (de)
WO (1) WO2003107498A1 (de)

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US20070280326A1 (en) * 2005-12-16 2007-12-06 Sioptical, Inc. External cavity laser in thin SOI with monolithic electronics
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JP2010165994A (ja) * 2009-01-19 2010-07-29 Hamamatsu Photonics Kk 量子カスケードレーザ
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Also Published As

Publication number Publication date
ATE347186T1 (de) 2006-12-15
EP1512205A1 (de) 2005-03-09
US20030231686A1 (en) 2003-12-18
WO2003107498A1 (en) 2003-12-24
AU2003234614A1 (en) 2003-12-31
JP4299240B2 (ja) 2009-07-22
CN1659752A (zh) 2005-08-24
CN100344034C (zh) 2007-10-17
TW200405049A (en) 2004-04-01
US6788727B2 (en) 2004-09-07
JP2005525707A (ja) 2005-08-25
DE60310068T2 (de) 2007-07-05
TWI242657B (en) 2005-11-01
EP1512205B1 (de) 2006-11-29

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