DE60237864D1 - Gegen Zugrifftransistordurchschlag geschützter EEPROM-Speicher - Google Patents

Gegen Zugrifftransistordurchschlag geschützter EEPROM-Speicher

Info

Publication number
DE60237864D1
DE60237864D1 DE60237864T DE60237864T DE60237864D1 DE 60237864 D1 DE60237864 D1 DE 60237864D1 DE 60237864 T DE60237864 T DE 60237864T DE 60237864 T DE60237864 T DE 60237864T DE 60237864 D1 DE60237864 D1 DE 60237864D1
Authority
DE
Germany
Prior art keywords
protected against
access transistor
eeprom memory
against access
transistor puncture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60237864T
Other languages
English (en)
Inventor
Francois Tailliet
Rosa Francesco La
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Application granted granted Critical
Publication of DE60237864D1 publication Critical patent/DE60237864D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0433—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
DE60237864T 2001-06-25 2002-06-25 Gegen Zugrifftransistordurchschlag geschützter EEPROM-Speicher Expired - Lifetime DE60237864D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0108347A FR2826496A1 (fr) 2001-06-25 2001-06-25 Memoire eeprom protegee contre les effets d'un claquage de transistor d'acces

Publications (1)

Publication Number Publication Date
DE60237864D1 true DE60237864D1 (de) 2010-11-18

Family

ID=8864728

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60237864T Expired - Lifetime DE60237864D1 (de) 2001-06-25 2002-06-25 Gegen Zugrifftransistordurchschlag geschützter EEPROM-Speicher

Country Status (4)

Country Link
US (1) US6934192B2 (de)
EP (2) EP1278199B1 (de)
DE (1) DE60237864D1 (de)
FR (1) FR2826496A1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2826496A1 (fr) * 2001-06-25 2002-12-27 St Microelectronics Sa Memoire eeprom protegee contre les effets d'un claquage de transistor d'acces
JP4426868B2 (ja) * 2003-04-04 2010-03-03 株式会社ルネサステクノロジ 不揮発性半導体記憶装置および半導体集積回路装置
US7057940B2 (en) * 2003-08-19 2006-06-06 Powerchip Semiconductor Corp. Flash memory cell, flash memory cell array and manufacturing method thereof
JP4153856B2 (ja) * 2003-09-30 2008-09-24 株式会社東芝 不揮発性半導体記憶装置
US7547944B2 (en) * 2006-03-30 2009-06-16 Catalyst Semiconductor, Inc. Scalable electrically eraseable and programmable memory (EEPROM) cell array
US20090003074A1 (en) * 2006-03-30 2009-01-01 Catalyst Semiconductor, Inc. Scalable Electrically Eraseable And Programmable Memory (EEPROM) Cell Array
US8750041B2 (en) 2006-09-05 2014-06-10 Semiconductor Components Industries, Llc Scalable electrically erasable and programmable memory
US8139408B2 (en) * 2006-09-05 2012-03-20 Semiconductor Components Industries, L.L.C. Scalable electrically eraseable and programmable memory
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
FR2938109A1 (fr) 2008-11-05 2010-05-07 St Microelectronics Rousset Memoire eeprom protegee contre les effets de claquage de transistors mos
EP2302635B1 (de) * 2009-09-18 2016-01-13 STMicroelectronics Srl Verfahren zum Vormagnetisieren einer nichtflüchtigen EEPROM-Speicheranordnung und entsprechende nichtflüchtige EEPROM-Speicheranordnung
FR2980025A1 (fr) 2011-09-12 2013-03-15 St Microelectronics Rousset Memoire eeprom protegee contre le claquage de transistors de controle de grille
FR3021806B1 (fr) * 2014-05-28 2017-09-01 St Microelectronics Sa Procede de programmation d'une cellule memoire non volatile comprenant une grille de transistor de selection partagee
FR3054723A1 (fr) 2016-07-27 2018-02-02 Stmicroelectronics (Rousset) Sas Cellule-memoire eeprom compacte avec zone d'injection tunnel reduite
FR3069374B1 (fr) 2017-07-21 2020-01-17 Stmicroelectronics (Rousset) Sas Transistor mos a effet bosse reduit
FR3069376B1 (fr) 2017-07-21 2020-07-03 Stmicroelectronics (Rousset) Sas Transistor comprenant une grille elargie
FR3069377B1 (fr) 2017-07-21 2020-07-03 Stmicroelectronics (Rousset) Sas Transistor mos a double blocs de grille a tension de claquage augmentee

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4254477A (en) * 1978-10-25 1981-03-03 Mcdonnell Douglas Corporation Reconfigurable memory circuit
JPS63153799A (ja) * 1986-08-08 1988-06-27 Nec Corp 半導体メモリ
KR940005695B1 (ko) * 1990-12-19 1994-06-22 삼성전자 주식회사 불휘발성 기억소자의 로우 디코더 회로
US5414286A (en) * 1992-03-19 1995-05-09 Sharp Kabushiki Kaisha Nonvolatile memory, method of fabricating the same, and method of reading information from the same
TW368749B (en) * 1995-09-11 1999-09-01 Matsushita Electronics Corp Semiconductor memory device and driving method thereof
DE19730116C2 (de) * 1997-07-14 2001-12-06 Infineon Technologies Ag Halbleiterspeicher mit nicht-flüchtigen Zwei-Transistor-Speicherzellen
US5981340A (en) * 1997-09-29 1999-11-09 Motorola, Inc. Method of building an EPROM cell without drain disturb and reduced select gate resistance
FR2769747B1 (fr) * 1997-10-15 2001-10-05 Sgs Thomson Microelectronics Perfectionnement aux memoires non volatiles programmables par effet dit "de porteurs chauds" et effacables par effet tunnel
US5995423A (en) * 1998-02-27 1999-11-30 Micron Technology, Inc. Method and apparatus for limiting bitline current
US6114724A (en) * 1998-03-31 2000-09-05 Cypress Semiconductor Corporation Nonvolatile semiconductor memory cell with select gate
US5862082A (en) * 1998-04-16 1999-01-19 Xilinx, Inc. Two transistor flash EEprom cell and method of operating same
US6501684B1 (en) * 1999-09-24 2002-12-31 Azalea Microelectronics Corporation Integrated circuit having an EEPROM and flash EPROM
FR2826496A1 (fr) * 2001-06-25 2002-12-27 St Microelectronics Sa Memoire eeprom protegee contre les effets d'un claquage de transistor d'acces

Also Published As

Publication number Publication date
EP1278199B1 (de) 2010-10-06
US20030035329A1 (en) 2003-02-20
EP1278201A3 (de) 2005-04-06
EP1278199A3 (de) 2005-03-30
FR2826496A1 (fr) 2002-12-27
US6934192B2 (en) 2005-08-23
EP1278201A2 (de) 2003-01-22
EP1278199A2 (de) 2003-01-22

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