DE60237414D1 - Fotoempfangende Vorrichtung, Strahlungsdetektor, und Strahlungsabbildungssystem - Google Patents

Fotoempfangende Vorrichtung, Strahlungsdetektor, und Strahlungsabbildungssystem

Info

Publication number
DE60237414D1
DE60237414D1 DE60237414T DE60237414T DE60237414D1 DE 60237414 D1 DE60237414 D1 DE 60237414D1 DE 60237414 T DE60237414 T DE 60237414T DE 60237414 T DE60237414 T DE 60237414T DE 60237414 D1 DE60237414 D1 DE 60237414D1
Authority
DE
Germany
Prior art keywords
radiation
imaging system
photoreceptive device
radiation detector
radiation imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60237414T
Other languages
English (en)
Inventor
Chiori Mochizuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2001093002A external-priority patent/JP2002289824A/ja
Priority claimed from JP2001142005A external-priority patent/JP3884922B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE60237414D1 publication Critical patent/DE60237414D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers

Landscapes

  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
DE60237414T 2001-03-28 2002-03-27 Fotoempfangende Vorrichtung, Strahlungsdetektor, und Strahlungsabbildungssystem Expired - Lifetime DE60237414D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001093002A JP2002289824A (ja) 2001-03-28 2001-03-28 光検出装置、放射線検出装置および放射線撮像システム
JP2001142005A JP3884922B2 (ja) 2001-05-11 2001-05-11 光検出装置及び放射線検出装置

Publications (1)

Publication Number Publication Date
DE60237414D1 true DE60237414D1 (de) 2010-10-07

Family

ID=26612379

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60237414T Expired - Lifetime DE60237414D1 (de) 2001-03-28 2002-03-27 Fotoempfangende Vorrichtung, Strahlungsdetektor, und Strahlungsabbildungssystem

Country Status (3)

Country Link
US (1) US6847039B2 (de)
EP (2) EP1246250B1 (de)
DE (1) DE60237414D1 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6765187B2 (en) 2001-06-27 2004-07-20 Canon Kabushiki Kaisha Imaging apparatus
US7034309B2 (en) 2001-11-13 2006-04-25 Canon Kabushiki Kaisha Radiation detecting apparatus and method of driving the same
US7214945B2 (en) * 2002-06-11 2007-05-08 Canon Kabushiki Kaisha Radiation detecting apparatus, manufacturing method therefor, and radiation image pickup system
US6784434B2 (en) * 2002-06-25 2004-08-31 General Electric Company Imaging array and method for manufacturing same
JP4391078B2 (ja) * 2002-11-28 2009-12-24 浜松ホトニクス株式会社 固体撮像装置及び放射線撮像装置
JP4391079B2 (ja) * 2002-11-28 2009-12-24 浜松ホトニクス株式会社 固体撮像装置及び放射線撮像装置
FR2849272B1 (fr) * 2002-12-19 2005-11-18 Commissariat Energie Atomique Dispositif de detection photo-electrique et notamment de rayonnement x ou y
KR100755287B1 (ko) 2003-02-14 2007-09-04 캐논 가부시끼가이샤 방사선 촬상장치
US7550722B2 (en) * 2004-03-05 2009-06-23 Oi Corporation Focal plane detector assembly of a mass spectrometer
WO2006010615A1 (en) * 2004-07-28 2006-02-02 Quantum Semiconductor Llc Layouts for the monolithic integration of cmos and deposited photonic active layers
JP5043380B2 (ja) 2005-07-25 2012-10-10 キヤノン株式会社 放射線検出装置および放射線検出システム
JP5207583B2 (ja) * 2005-07-25 2013-06-12 キヤノン株式会社 放射線検出装置および放射線検出システム
JP4908935B2 (ja) 2006-06-09 2012-04-04 キヤノン株式会社 光電変換装置及び撮像システム
US20080078940A1 (en) * 2006-10-03 2008-04-03 General Electric Company Portable imaging device having shock absorbent assembly
JP5286691B2 (ja) * 2007-05-14 2013-09-11 三菱電機株式会社 フォトセンサー
US8008627B2 (en) * 2007-09-21 2011-08-30 Fujifilm Corporation Radiation imaging element
JP5142943B2 (ja) * 2007-11-05 2013-02-13 キヤノン株式会社 放射線検出装置の製造方法、放射線検出装置及び放射線撮像システム
TWI415283B (zh) * 2009-02-18 2013-11-11 Au Optronics Corp Ｘ射線感測器及其製作方法
JP2011238897A (ja) * 2010-04-13 2011-11-24 Canon Inc 検出装置及びその製造方法並びに検出システム
JP2012079860A (ja) * 2010-09-30 2012-04-19 Canon Inc 検出装置及び放射線検出システム
JP5963551B2 (ja) * 2012-06-06 2016-08-03 キヤノン株式会社 アクティブマトリクスパネル、検出装置、及び、検出システム
JP2014041116A (ja) * 2012-07-25 2014-03-06 Canon Inc 放射線撮影装置
US10466370B1 (en) 2018-07-16 2019-11-05 Vieworks Co., Ltd. Radiation imaging system
US10690787B2 (en) * 2018-07-16 2020-06-23 Vieworks Co., Ltd. Radiation imaging system

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5262649A (en) 1989-09-06 1993-11-16 The Regents Of The University Of Michigan Thin-film, flat panel, pixelated detector array for real-time digital imaging and dosimetry of ionizing radiation
EP0778983B1 (de) 1994-07-27 2000-05-31 1294339 Ontario, Inc. Bildwandlersystem
US5641974A (en) 1995-06-06 1997-06-24 Ois Optical Imaging Systems, Inc. LCD with bus lines overlapped by pixel electrodes and photo-imageable insulating layer therebetween
JP3957803B2 (ja) 1996-02-22 2007-08-15 キヤノン株式会社 光電変換装置
US6011274A (en) * 1997-10-20 2000-01-04 Ois Optical Imaging Systems, Inc. X-ray imager or LCD with bus lines overlapped by pixel electrodes and dual insulating layers therebetween
EP0936660A1 (de) 1998-02-10 1999-08-18 Interuniversitair Microelektronica Centrum Vzw Bilderzeuger oder Partikel- oder Strahlungs-Detektor Und Verfahren zur Herstellung desselben
JP4011734B2 (ja) * 1998-06-02 2007-11-21 キヤノン株式会社 ２次元光センサ、それを用いた放射線検出装置及び放射線診断システム
FR2782388B1 (fr) 1998-08-11 2000-11-03 Trixell Sas Detecteur de rayonnement a l'etat solide a duree de vie accrue

Also Published As

Publication number Publication date
EP2081230A2 (de) 2009-07-22
EP2081230A3 (de) 2010-02-10
EP2081230B1 (de) 2012-02-08
EP1246250A2 (de) 2002-10-02
US20020145117A1 (en) 2002-10-10
EP1246250B1 (de) 2010-08-25
US6847039B2 (en) 2005-01-25
EP1246250A3 (de) 2004-07-28

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